Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with hig...

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Published in:Nature communications Vol. 12; no. 1; p. 2757
Main Authors: Meisenheimer, P. B., Steinhardt, R. A., Sung, S. H., Williams, L. D., Zhuang, S., Nowakowski, M. E., Novakov, S., Torunbalci, M. M., Prasad, B., Zollner, C. J., Wang, Z., Dawley, N. M., Schubert, J., Hunter, A. H., Manipatruni, S., Nikonov, D. E., Young, I. A., Chen, L. Q., Bokor, J., Bhave, S. A., Ramesh, R., Hu, J.-M., Kioupakis, E., Hovden, R., Schlom, D. G., Heron, J. T.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 12-05-2021
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Summary:Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe 1− x Ga x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x  = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe 1− x Ga x alloy to gallium compositions as high as x  = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe 1− x Ga x − [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 −[PbTiO 3 ] 0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10 −5  s m −1 . When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit. In this work, Meisenheimer et al. use careful epitaxial growth of FeGa thin films to achieve a metastable state with remarkably high magetostrictive coefficients. Materials with strong magnetostrictive properties are vital components in magnetoelectric multiferroic heterostructures, with considerable potential for use a variety of technologies.
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AC02-05CH11231; NNCI-1542081; EEC-1160504; DMR-1719875; DMR-1539918; 70NANB17H041; CBET-2006028; TG-DMR180076; ACI-1548562; DMR-1807984; 2018-LM-2830
USDOE Office of Science (SC)
National Science Foundation (NSF)
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-021-22793-x