Search Results - "Dauwe, Stefan"

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    Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells by Dauwe, Stefan, Mittelstädt, Lutz, Metz, Axel, Hezel, Rudolf

    Published in Progress in photovoltaics (01-06-2002)
    “…Many solar cells incorporating SiNx films as a rear surface passivation scheme have not reached the same high level of cell performance as solar cells…”
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    Journal Article
  3. 3

    Nondestructive Characterization of Voids in Rear Local Contacts of PERC-Type Solar Cells by Dressler, Katharina, Rauer, Miriam, Kaloudis, M., Dauwe, Stefan, Herguth, Axel, Hahn, Giso

    Published in IEEE journal of photovoltaics (01-01-2015)
    “…In this paper, we present two nondestructive characterization methods for the detection of voids in rear local contacts of passivated emitter and rear-type…”
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    Journal Article
  4. 4

    Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination by Dauwe, S., Schmidt, J., Metz, A., Hezel, R.

    “…A novel method is applied to determine the fixed positive charge density Q/sub f/ in plasma-enhanced chemical vapor deposited silicon nitride (SiN/sub x/)…”
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    Conference Proceeding
  5. 5

    Multicrystalline Silicon Thin Film Solar Cells Based on Laser Crystallized Layers on Glass by Andra, G., Bergmann, J., Bochmann, A., Falk, F., Gawlik, A., Ose, E., Plentz, J., Dauwe, S., Kieliba, T.

    “…Multicrystalline silicon thin film cells were prepared by the LLC (layered laser crystallization) process on a glass superstrate. In this process an a-Si layer…”
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    Conference Proceeding
  6. 6

    Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films by Dauwe, S., Schmidt, J., Hezel, R.

    “…Outstanding surface passivation of single-crystalline p- as well as n-type silicon is obtained using hydrogenated amorphous silicon (a-Si:H) films deposited at…”
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    Conference Proceeding