Search Results - "Dauwe, Stefan"
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Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology
Published in Solar energy materials and solar cells (01-01-2014)“…Stimulated by the extreme market conditions, the increase in performance and the reduction of manufacturing costs of standard crystalline silicon solar cells…”
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Journal Article Conference Proceeding -
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Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
Published in Progress in photovoltaics (01-06-2002)“…Many solar cells incorporating SiNx films as a rear surface passivation scheme have not reached the same high level of cell performance as solar cells…”
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Journal Article -
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Nondestructive Characterization of Voids in Rear Local Contacts of PERC-Type Solar Cells
Published in IEEE journal of photovoltaics (01-01-2015)“…In this paper, we present two nondestructive characterization methods for the detection of voids in rear local contacts of passivated emitter and rear-type…”
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Journal Article -
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Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination
Published in Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002 (2002)“…A novel method is applied to determine the fixed positive charge density Q/sub f/ in plasma-enhanced chemical vapor deposited silicon nitride (SiN/sub x/)…”
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Conference Proceeding -
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Multicrystalline Silicon Thin Film Solar Cells Based on Laser Crystallized Layers on Glass
Published in 2006 IEEE 4th World Conference on Photovoltaic Energy Conference (01-05-2006)“…Multicrystalline silicon thin film cells were prepared by the LLC (layered laser crystallization) process on a glass superstrate. In this process an a-Si layer…”
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Conference Proceeding -
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Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films
Published in Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002 (2002)“…Outstanding surface passivation of single-crystalline p- as well as n-type silicon is obtained using hydrogenated amorphous silicon (a-Si:H) films deposited at…”
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Conference Proceeding