Search Results - "Dauksher, Bill"

Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation by Jaewon Oh, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, D'Amico, John

“…We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the…”
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Effect of annealing on interdigitated back contact silicon heterojunction solar cells(IBC) by Rizi, Mansoure Moeini, Balaji, Pradeep, Dauksher, Bill, Augusto, Andre, Goodnick, Stephen, Honsberg, Christiana B., Goryll, Michael

“…Annealing effects have been studied on test structures and TLM pads to determine the optimum final annealing time for fabricated interdigitated back contact…”
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Characterization and comparison of silicon nitride films deposited using two novel processes by Sharma, Vivek, Bailey, Adam, Dauksher, Bill, Tracy, Clarence, Bowden, Stuart, O’Brien, Barry

“…Hydrogenated silicon nitride films (SiNx:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an…”
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A novel technique for performing PID susceptibility screening during the solar cell fabrication process by Jaewon Oh, Dahal, Som, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter

“…Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those…”
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p+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide by Reblitz, Tim, Tracy, Clarence, Bailly, Mark, Dauksher, Bill, Bowden, Stuart

“…The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into…”
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Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell by Ghosh, Kunal, Herasimenka, Stanislau, Dauksher, Bill, Bowden, Stuart

“…Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed…”
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p+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization by Reblitz, Tim, Tracy, Clarence, Dauksher, Bill, Herasimenka, Stanislau, Bowden, Stuart

“…We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD…”
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Study and manipulation of charges present in silicon nitride films by Sharma, Vivek, Tracy, Clarence, Schroder, Dieter, Flores, Marco, Dauksher, Bill, Bowden, Stuart

“…As crystalline silicon solar cells continue to get thinner, the surfaces of the cell play an ever important role in controlling the cell efficiency. One tool…”
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Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance by Ghosh, Kunal, Tracy, Clarence J, Dauksher, Bill, Herasimenka, Stanislau, Honsberg, Christiana, Bowden, Stuart

“…The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction a cell. The extraction of the charged state density at the…”
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Characterization and comparison of silicon nitride films deposited using two novel processes by Sharma, V., Bailey, A., Dauksher, B., Tracy, C., Bowden, S., O'Brien, B.

“…Hydrogenated silicon nitride films (SiN x :H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an…”
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Extendibility of x‐ray lithography to ⩽130 nm ground rules in complex integrated circuit patterns by Hector, Scott, Chu, William, Thompson, Matthew, Pol, Victor, Dauksher, Bill, Cummings, Kevin, Resnick, Doug, Pendharkar, Sandeep, Maldonado, Juan, McCord, Mark, Krasnoperova, Azalia, Liebmann, Lars, Silverman, Jerry, Guo, Jerry, Khan, Mumit, Bollepalli, Srinivas, Capodieci, Luigi, Cerrina, Franco

“…Previous experimental and theoretical evidence indicates that x‐ray lithography can be used to pattern ≤180 nm features. In order to be used in manufacturing,…”
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