Search Results - "Daubriac, R."

Stress relaxation and dopant activation in nsec laser annealed SiGe by Cristiano, F., Monflier, R., Daubriac, R., Demoulin, R., Scheid, E., Dagault, L., Royet, A-S., Alba, P. Acosta, Kerdiles, S.

“…Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during…”
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High performance CMOS FDSOI devices activated at low temperature by Pasini, L., Batude, P., Lacord, J., Casse, M., Mathieu, B., Sklenard, B., Luce, F. Piegas, Micout, J., Payet, A., Mazen, F., Besson, P., Ghegin, E., Borrel, J., Daubriac, R., Hutin, L., Blachier, D., Barge, D., Chhun, S., Mazzocchi, V., Cros, A., Barnes, J.-P, Saghi, Z., Delaye, V., Rambal, N., Lapras, V., Mazurier, J., Weber, O., Andrieu, F., Brunet, L., Fenouillet-Beranger, C., Rafhay, Q., Ghibaudo, G., Cristiano, F., Haond, M., Boeuf, F., Vinet, M.

“…3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are…”
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Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers by Baron, Y, Lábár, J. L, Lequien, S, Pécz, B, Daubriac, R, Kerdilés, S, ALba, P. Acosta, Marcenat, C, Débarre, D, Lefloch, F, Chiodi, F

“…We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum…”
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Differential hall characterization of shallow strained SiGe layers by Daubriac, R., Daher, M. Abou, Cristano, F., Scheid, E., Joblot, S., Barge, D.

“…A Differential Hall Effect method has been developed that allows to determine of the dopant activation level of SiGe alloys in the surface region. The…”
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