Flash memory under cosmic & alpha irradiation

Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit/spl trade/) soft error failure rate (cross section) is 4-5 orders of magnitude better than SRAM. Flash memory soft error rate...

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Bibliographic Details
Published in:	2004 IEEE International Reliability Physics Symposium. Proceedings pp. 637 - 638
Main Authors:	Fogle, A.D., Darling, D., Blish, R.C., Dasko, G.
Format:	Conference Proceeding
Language:	English
Published:	Piscataway NJ IEEE 2004
Subjects:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Flash memory Integrated circuit reliability Integrated circuits Integrated circuits by function (including memories and processors) Logic circuits Neutrons Particle beams Protons Random access memory Sea level Sea measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Static random access memory Random access memory Error rate Cosmic ray Failure rate NOR circuit Cosmic irradiation Floating gate technology Logic circuit Soft error Flash memory Integrated circuit Proton irradiation Reliability Alpha particle
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Summary:	Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit/spl trade/) soft error failure rate (cross section) is 4-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.
ISBN:	9780780383159 078038315X
DOI:	10.1109/RELPHY.2004.1315427