Search Results - "Das, Samadrita"

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Nguyen, Hieu Pham Trung, Crupi, Giovanni

“…In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free…”
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The role of indium composition in In x Ga 1−x N prestrained layer towards optical characteristics of EBL free GaN / InGaN nanowire LEDs for enhanced luminescence by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Nguyen, Hieu Pham Trung, Crupi, Giovanni

“…Abstract In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of In x Ga 1 − x…”
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The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Nguyen, Hieu Pham Trung, Crupi, Giovanni

“…In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of InxGa1−xN/GaN, which…”
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Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence by Das, Samadrita, Lenka, Trupti, Talukdar, Fazal, Velpula, Ravi, Nguyen, Hieu

“…In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum…”
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Deep-UV Nanowire LED with Step-Graded n-Type Electron Blocking Layer and Al₂O₃ Nanoparticles for Enhanced Performance by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed

“…We have demonstrated a novel n-type AlInGaN electron blocking layer (EBL) as opposed to the more common ptype AlGaN EBL for deep ultraviolet (DUV) AlGaN/GaN…”
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DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions by Rao, G. Purnachandra, Lenka, Trupti Ranjan, Das, Samadrita, Nguyen, Hieu Pham Trung

“…This article presents an investigation of the DC and RF characteristics of III-Nitride / \boldsymbol{\beta}-\mathrm{Ga}_{2} \mathrm{O}_{3} nano-HEMT by varying…”
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Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Nguyen, Hieu Pham Trung

“…In this paper, we have proposed a novel deep ultra-violet (DUV) AlGaN/GaN nanowire light-emitting diode (LED) with a step-graded n-type AlInGaN electron…”
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Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Velpula, Ravi Teja, Nguyen, Hieu Pham Trung, Crupi, Giovanni

“…In this work, an InGaN/GaN multi-quantum well light emitting diode is designed with different kinds of prestrain layers (InGaN) inserted between the active…”
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Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Crupi, Giovanni, Nguyen, Hieu Pham Trung

“…We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW)…”
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Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology by Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal A., Velpula, Ravi Teja, Jain, Barsha, Nguyen, Hieu Pham Trung, Crupi, Giovanni

“…In this work, we have designed an UV-LED with multiple-quantum well of GaN/AlGaN to witness the effect of spontaneous polarization on its output…”
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Performance Enhancement of AlInGaN Quantum Well based UV-LED by Das, Samadrita, Lenka, T. R., Talukdar, F. A., Velpula, R. T., Jain, Barsha, Nguyen, H. P. T.

“…In this paper, a light emitting diode in the ultra-violet range (UV-LED) with quantum well of AlInGaN is designed and analyzed through technology…”
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