Search Results - "Darowski, N."
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1
Exchange bias in GeMn nanocolumns: The role of surface oxidation
Published in Applied physics letters (09-08-2010)“…We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this…”
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2
Two-stage relaxation of damage structure in strongly creep-deformed single crystal superalloy SC16 measured by means of X-ray diffraction
Published in Scripta materialia (2009)“…Specimens of single crystal superalloy SC16 were creep-strained at 1223 K along the [0 0 1] direction up to rupture using a creep stress of 150 MPa. After…”
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3
Neutron diffraction and synchrotron radiation studies of La1-xSrxCoO3 magnetic properties
Published in Journal of magnetism and magnetic materials (01-03-2007)“…Magnetic properties of the La1-xSrxCoO3 solid solutions have been studied by neutron diffraction and X-ray absorption near edge structure (XANES) measurements…”
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4
The growth and structure of titanium dioxide films on a Re(1 0 −1 0) surface: Rutile(0 1 1)-(2 × 1)
Published in Surface science (15-07-2006)“…Titanium dioxide films were grown on Re(1 0 −1 0) by Ti vapor deposition in oxygen at T = 830 K and studied by means of low-energy electron diffraction (LEED),…”
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5
Lattice distortion in γ′ precipitates of single crystal superalloy SC16 under creep deformation
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-05-2006)“…Specimens of single crystal superalloy SC16 were creep deformed at 1223K along [001] up to ±0.5% creep strain using stresses of −150MPa and +150MPa,…”
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6
Surface and bulk structural changes in InP single crystals induced by 350 Mev Au ion irradiation
Published in Physica. B, Condensed matter (28-02-2005)“…InP (0 0 1) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift Au ions. The bulk and near surface structure was…”
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Journal Article Conference Proceeding -
7
Surface crystallinity and radiation-amorphization of InP – An X-ray grazing incidence study
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-08-2003)“…First results of a radiation-amorphization study of InP are presented which were obtained at a six-circle diffractometer operated at the bending magnet…”
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8
Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation
Published in Applied physics letters (25-12-2000)“…Focused Ga+ ion beam implantation was used to define a laterally periodic modulation of the electronic band gap in a GaAs/Ga0.97In0.03As/Al0.2Ga0.8As/GaAs…”
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9
X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (2003)“…The elastic strain relaxation in a series of dry-etched periodic multilayer Si/SiGe wire samples with different etching depths was investigated systematically…”
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10
In-plane strain and strain relaxation in laterally patterned periodic arrays of Si/SiGe quantum wires and dot arrays
Published in Applied physics letters (10-08-1998)“…The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high…”
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11
Analysis of the strain distribution in lateral nanostructures for interpreting photoluminescence data
Published in Physica. B, Condensed matter (01-06-2000)“…The strain distribution of free-standing and buried lateral wire structures based on GaAs [0 0 1] containing a In 0.14Ga 0.86 As single quantum well were…”
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12
Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction
Published in Physica. B, Condensed matter (01-06-1998)“…The triple-axis equipment under X-ray grazing incidence diffraction was applied for the first time in order to realise high-resolution investigations of the…”
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Journal Article Conference Proceeding -
13
In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction
Published in Physica. B, Condensed matter (01-06-2000)“…Surface-sensitive X-ray grazing incidence diffraction (GID) was used to investigate the elastic strain relaxation in laterally periodic Si/SiGe wires, oriented…”
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14
X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures
Published in Thin solid films (30-12-1998)“…The morphology and the strain relaxation of a laterally patterned GaAs/Ga 0.86In 0.14As/GaAs surface wire structure on GaAs [001] were studied before and after…”
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15
Grazing incidence diffraction by epitaxial multilayered gratings
Published in Physica. B, Condensed matter (01-06-1998)“…Multilayered gratings have been investigated by high-resolution grazing incidence diffraction, employing non-coplanar triple crystal diffractometry. A…”
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16
X-ray diffraction from quantum wires and quantum dots
Published in Journal of materials science. Materials in electronics (01-05-1999)“…From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples…”
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17
X-ray measurements with micro- and nanoresolution at BESSY
Published in Spectrochimica acta. Part B: Atomic spectroscopy (01-07-2007)“…Capabilities of the KMC-2 beamline at BESSY for spatially resolved X-ray measurements with micro- and nanometer resolution have been reviewed. A combination of…”
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18
Grain rotation in nanocrystalline layers under influence of swift heavy ions
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-03-2009)“…Significant changes in texture occur in nanocrystalline Ti, TiN and NiO layers during irradiation with 350 MeV Au ions. The angle between ion beam and layer…”
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19
Nucleation at the phase transition near 40 ° C in MnAs nanodisks
Published in Applied physics letters (03-08-2006)“…The phase transition near 40 ° C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks…”
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20
Surface and bulk structural changes in InP single crystals induced by 350 Mev Au ion irradiation
Published in Physica. B, Condensed matter (28-02-2005)“…InP (001) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift Au ions. The bulk and near surface structure was…”
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