Silicon carbide MESFETs performances and application in broadcast power amplifiers

Silicon carbide MESFETs performances and application in broadcast power amplifiers

We present DC, small signal and power characterization of recent Thomson silicon carbide MESFETs. We present also performances of SiC power amplifiers designed for use in broadcast digital television. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and...

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Bibliographic Details
Published in:2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Vol. 2; pp. 641 - 644 vol.2
Main Authors: Temcamani, F., Pouvil, P., Noblanc, O., Brylinski, C., Bannelier, P., Darges, B., Prigent, J.P.
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 2001
Subjects:
Breakdown voltage
Conducting materials
MESFETs
Power amplifiers
Power generation
Radio frequency
Radiofrequency amplifiers
Silicon carbide
Thermal conductivity
TV broadcasting
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Summary:We present DC, small signal and power characterization of recent Thomson silicon carbide MESFETs. We present also performances of SiC power amplifiers designed for use in broadcast digital television. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and RF power amplification.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISBN:0780365380
9780780365384
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.966976