Search Results - "Dao, S V T"
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A Backside-Illuminated Image Sensor With 200 000 Pixels Operating at 250 000 Frames per Second
Published in IEEE transactions on electron devices (01-11-2009)“…In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and…”
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Journal Article -
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Novel layout technique for on-chip inductance minimization
Published in Microelectronics international (31-07-2009)“…Purpose - The purpose of this paper is to minimize on-chip inductance effect for modern very large-scale integration (VLSI), ultra large-scale integration…”
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Journal Article -
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Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking
Published in 2014 IEEE International Electron Devices Meeting (01-12-2014)“…Evolution of ultra-high-speed image sensors is reviewed. Currently, the highest frame rate achieved by a solid-state image sensor is 16.7 Mfps, while the…”
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Conference Proceeding -
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A 16 Mfps 165kpixel backside-illuminated CCD
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…In 2002, we reported a CCD image sensor with 260x312 pixels capable of capturing 103 consecutive images at 1,000,000 frames per second (1Mfps). We named the…”
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Conference Proceeding -
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Toward 1 Gfps: A multi-collection-gate BSI imager
Published in 2012 Fourth International Conference on Communications and Electronics (ICCE) (01-08-2012)“…A concept on an ultra-high-speed image sensor is presented, targeting 1Gfps. The structure of the sensor is simple. The sensor is a backside illuminated one…”
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Conference Proceeding -
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Design of folded CCDs for ultra high speed imaging
Published in 2014 IEEE Fifth International Conference on Communications and Electronics (ICCE) (01-07-2014)“…The simplest idea to design an in-situ memory CCD is to fold it and install in each pixel. The conventional CCD process technology with double or triple…”
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Conference Proceeding