Search Results - "Danilchenko, B A"

Tunneling effects in the kinetics of helium and hydrogen isotopes desorption from single-walled carbon nanotube bundles by Danilchenko, B. A., Yaskovets, I. I., Uvarova, I. Y., Dolbin, A. V., Esel'son, V. B., Basnukaeva, R. M., Vinnikov, N. A.

“…The kinetics of desorption both helium isotopes and molecules of hydrogen and deuterium from open-ended or γ-irradiated single-walled carbon nanotube bundles…”
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Silicon coding-decoding photonic device by electron irradiation and light down conversion by Malyutenko, V. K., Tykhonov, A. N., Malyutenko, O. Yu, Rohutskii, I. S., Danilchenko, B. A.

“…We propose and demonstrate a coding-decoding procedure as an important step to realize one more Si-based photonic device. Low-fluence (<1014 e/cm2) high-energy…”
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Thermal conductivity of GaN crystals in 4.2–300 K range by Jeżowski, A., Danilchenko, B.A., Boćkowski, M., Grzegory, I., Krukowski, S., Suski, T., Paszkiewicz, T.

“…Results of measurements of thermal conductivity of bulk GaN crystals in the temperature interval 4.2–300 K are reported. Experiments were performed on two…”
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1/ f noise and mechanisms of the conductivity in carbon nanotube bundles by Danilchenko, B.A., Tripachko, N.A., Lev, S., Petrychuk, M.V., Sydoruk, V.A., Sundqvist, B., Vitusevich, S.A.

“…Experimental results are reported of the investigation of conductivity mechanisms in metallic single-wall carbon nanotube (SWCNT) bundles in a wide temperature…”
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Radiation resistance of GaAs solar cells and hot carriers by Danilchenko, B.A., Budnyk, A.P., Shpinar, L.I., Yaskovets, I.I., Barnham, K.W.J., Ekins-Daukes, N.J.

“…The role of hot carriers in enhancing the radiation resistance of GaAs solar cells has been investigated. The laser-pulse induced, short-circuit current…”
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Heat capacity and phonon mean free path of wurtzite GaN by Danilchenko, B. A., Paszkiewicz, T., Wolski, S., Jeżowski, A., Plackowski, T.

“…The authors report lattice specific heat of bulk hexagonal GaN measured by the heat flow method in the temperature range of 20 - 300 K and by the adiabatic…”
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High-field quasi-ballistic transport in AlGaN/GaN heterostructures by Danilchenko, B. A., Tripachko, N. A., Belyaev, A. E., Vitusevich, S. A., Hardtdegen, H., Lüth, H.

“…Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2 K have been…”
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Effects of γ-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…γ‐ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350…”
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Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates by Danilchenko, B. A., Zelensky, S. E., Drok, E., Vitusevich, S. A., Danylyuk, S. V., Klein, N., Lüth, H., Belyaev, A. E., Kochelap, V. A.

“…The energy relaxation rate for hot electrons in AlGaN/GaN heterostructures was measured over the temperature range 4.2–300 K. Samples grown on sapphire and…”
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High temperature Luttinger liquid conductivity in carbon nanotube bundles by Danilchenko, B. A., Shpinar, L. I., Tripachko, N. A., Voitsihovska, E. A., Zelensky, S. E., Sundqvist, B.

“…The conductance and the current-voltage characteristics of metallic single wall carbon nanotube bundles have been measured between 4.2 and 330 K using 10-30 ns…”
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Low-temperature annealing of radiation-induced defects in carbon nanotube bundles by Danilchenko, B.A., Voitsihovska, E.A., Rogutski, I.S., Rudenko, R.M., Uvarova, I.Y., Yaskovets, I.I.

“…The annealing of radiation-induced defects in carbon nanotube bundles below room temperature has been investigated experimentally. Significant feature of this…”
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On the upper limit of thermal conductivity GaN crystals by Danilchenko, B.A., Obukhov, I.A., Paszkiewicz, T., Wolski, S., Jeżowski, A.

“…The maximal value of thermal conductivity κ max of the perfect wurtzite GaN crystal containing isotopes of natural abundance is estimated. Our upper limit of κ…”
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Hot-electron transport in AlGaN∕GaN two-dimensional conducting channels by Danilchenko, B. A., Zelensky, S. E., Drok, E., Vitusevich, S. A., Danylyuk, S. V., Klein, N., Lüth, H., Belyaev, A. E., Kochelap, V. A.

“…We report on experimental studies of high-field electron transport in AlGaN∕GaN two-dimensional electron gas. The velocity–electric field characteristics are…”
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Role of decay processes in the propagation of slightly nonequilibrium thermal-pulse phonons in YAlO3:Lu crystals by Danil’chenko, B. A., Poplavskii, D. V., Ivanov, S. N., Taranov, A. V., Khazanov, E. N.

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Low-frequency Noise in Individual Carbon Nanotube Field-Effect Transistors with Top, Side and Back Gate Configurations: Effect of Gamma Irradiation by Sydoruk, V. A, Goß, K, Meyer, C, Petrychuk, M. V, Danilchenko, B. A, Weber, P, Stampfer, C, Li, J, Vitusevich, S. A

“…We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with…”
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On the upper limit of thermal conductivity GaN crystals by Danilchenko, B. A, Obukhov, I. A, Paszkiewicz, T, Wolski, S, Jezowski, A

“…The maximal value of thermal conductivity \kappa_{max} of the perfect wurzite GaN crystal containing isotopes of natural abundance is estimated. Our upper…”
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Electroreflectance study of the effect of {gamma} radiation on the optical properties of epitaxial GaN films by Belyaev, A. E., Klyui, N. I., Konakova, R. V., Lukyanov, A. N., Danilchenko, B. A., Sveshnikov, J. N., Klyui, A. N.

“…Experimental data on the electroreflectance spectra of {gamma}-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10{sup 5}-2…”
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Enhancement by electric field of high-speed photoconductivityin Al Ga N ∕ Ga N heterostructures by Danilchenko, B. A., Zelensky, S. E., Drok, E. A., Belyaev, A. E., Kochelap, V. A., Lüth, H., Vitusevich, S. A.

“…The authors report a large response in the conductivity of Al Ga N ∕ Ga N heterostructures to a 10 ns UV laser pulses. The dynamics of the conductivity…”
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Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films by Belyaev, A. E., Klyui, N. I., Konakova, R. V., Lukyanov, A. N., Danilchenko, B. A., Sveshnikov, J. N., Klyui, A. N.

“…Experimental data on the electroreflectance spectra of γ-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10 5 −2 × 10 6 rad…”
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Enhancement by electric field of high-speed photoconductivity in AlGaN∕GaN heterostructures by Danilchenko, B. A., Zelensky, S. E., Drok, E. A., Belyaev, A. E., Kochelap, V. A., Lüth, H., Vitusevich, S. A.

“…The authors report a large response in the conductivity of AlGaN∕GaN heterostructures to a 10ns UV laser pulses. The dynamics of the conductivity response…”
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