Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p‑Doping of Silicon

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p‑Doping of Silicon

Designing new approaches to incorporate dopant impurities in semiconductor materials is essential in keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach to functionalize silica nanoparticles, we were able to g...

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Bibliographic Details
Published in:Journal of physical chemistry. C Vol. 119; no. 24; pp. 13750 - 13757
Main Authors: Mathey, Laurent, Alphazan, Thibault, Valla, Maxence, Veyre, Laurent, Fontaine, Hervé, Enyedi, Virginie, Yckache, Karim, Danielou, Marianne, Kerdiles, Sébastien, Guerrero, Jean, Barnes, Jean-Paul, Veillerot, Marc, Chevalier, Nicolas, Mariolle, Denis, Bertin, François, Durand, Corentin, Berthe, Maxime, Dendooven, Jolien, Martin, François, Thieuleux, Chloé, Grandidier, Bruno, Copéret, Christophe
Format: Journal Article
Language:English
Published: American Chemical Society 18-06-2015
Subjects:
Condensed Matter
Materials Science
Physics
Online Access:Get full text
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Summary:Designing new approaches to incorporate dopant impurities in semiconductor materials is essential in keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach to functionalize silica nanoparticles, we were able to graft tailor-made boron-molecular precursors and control the thermal release of boron in the silica framework. The molecular-level description of the surface structure lays the foundation for a structure–property relationship approach, which is readily and successfully implemented to dope non-deglazed silicon wafers. As the method does not require an additional oxide capping step and shows minimal risk of carbon contamination, as demonstrated by compositional and electrical characterizations of the wafers, it is perfectly adapted to advanced microelectronics manufacturing processes.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.5b03408