Analysis of the phase noise contributions in optoelectronic oscillator with optical gain

Thanks to the development of high power uni-travelling-carrier photodiodes, we studied optoelectronic oscillators architectures with optical gain. We compared the phase noise performances with two different optical amplifiers, based on erbium-doped fiber or semiconductor. Optical intensity noise is...

Full description

Saved in:

Bibliographic Details
Published in:	2022 IEEE International Topical Meeting on Microwave Photonics (MWP) pp. 1 - 3
Main Authors:	Dangoisse, Guillaume, Berger, Perrine, Crozatier, Vincent, Van Dijk, Frederic, Caillaud, Christophe, Verdun, Michael, Le Grand, Nadege, Prat, Xavier, Canat, Guillaume
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-10-2022
Subjects:	Microwave amplifiers Microwave oscillators Microwave photonic Optical amplifier Optical fiber amplifiers Optical noise Optoelectronic Oscillator Phase noise Relative intensity noise Semiconductor optical amplifiers Stimulated emission
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Thanks to the development of high power uni-travelling-carrier photodiodes, we studied optoelectronic oscillators architectures with optical gain. We compared the phase noise performances with two different optical amplifiers, based on erbium-doped fiber or semiconductor. Optical intensity noise is the main limitation for the phase noise, both at low and high offset frequencies. With a semiconductor optical amplifier, ultra-low phase noise is reached with equivalent performances from 8 to 15 GHz.
DOI:	10.1109/MWP54208.2022.9997723