Search Results - "Danga, H. T."

In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide by Tunhuma, S. M., Auret, F. D., Danga, H. T., Nel, J. M., Diale, M. M.

“…Ni/4 H -SiC Schottky barrier diodes have been irradiated by 5.4-MeV helium ions at cryogenic temperatures and their electrical characteristics investigated…”
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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC by Omotoso, E., Auret, F. D., Igumbor, E., Tunhuma, S. M., Danga, H. T., Ngoepe, P. N. M., Taleatu, B. A., Meyer, W. E.

“…The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H -SiC Schottky barrier diodes (SBDs) have been…”
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Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range by Gora, V.E., Auret, F.D., Danga, H.T., Tunhuma, S.M, Nyamhere, C., Igumbor, E., Chawanda, A

“…•Impact of palladium silicidation on barrier height inhomogeneity.•No correlation between electrically active defects and barrier inhomogeneities.•Limitation…”
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Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide by Gora, V.E., Chawanda, A., Nyamhere, C., Auret, F.D., Mazunga, F., Jaure, T., Chibaya, B., Omotoso, E., Danga, H.T., Tunhuma, S.M.

“…We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC…”
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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons by Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.

“…We have characterised the deep level defects present before and after annealing the proton-irradiated Ni/nitrogen-doped 4H-SiC Schottky barrier diodes (SBDs)…”
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Defect levels induced by double substitution of B and N in 4H-SiC by Igumbor, E., Danga, H.T., Omotoso, E., Meyer, W.E.

“…Studies of substitutional impurities in 4H-SiC play a major role in identifying the most enhanced defect levels induced. N and B substitution in 4H-SiC on…”
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Rare earth interstitial-complexes in Ge: Hybrid density functional studies by Igumbor, E., Omotoso, E., Danga, H.T., Tunhuma, S.M., Meyer, W.E.

“…We present results of the structural, energetic and electronic properties of rare earth (RE) interstitial-complexes in Ge (REGeGei; for RE: Ce, Pr, Eu, Er and…”
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Rare earth substitutional impurities in germanium: A hybrid density functional theory study by Igumbor, E., Omotoso, E., Tunhuma, S.M., Danga, H.T., Meyer, W.E.

“…The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density functional theory has been used to model the electronic and structural…”
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Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs by Tunhuma, S.M., Auret, F.D., Nel, J.M., Omotoso, E., Danga, H.T., Igumbor, E., Diale, M.

“…We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type…”
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The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy by Danga, H.T., Tunhuma, S.M., Auret, F.D., Igumbor, E., Omotoso, E., Meyer, W.E.

“…Primary defects introduced in boron-doped silicon by an alpha-particle source with a fluence rate of 7 × 106 cm−2 s−1 at cryogenic temperatures were…”
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Induced defect levels of P and Al vacancy-complexes in 4 H -SiC: A hybrid functional study by Igumbor, E., Olaniyan, O., Mapasha, R.E., Danga, H.T., Omotoso, E., Meyer, W.E.

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Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study by Igumbor, E., Olaniyan, O., Mapasha, R.E., Danga, H.T., Omotoso, E., Meyer, W.E.

“…The electronic behaviour of high-dose phosphorus implanted in 4H-SiC is mainly desirable to obtained lower sheet resistance of 4H-SiC. Al doping on the other…”
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Thermal stability of defects introduced by electron beam deposition in p-type silicon by Danga, H.T., Auret, F.D., Tunhuma, S.M., Omotoso, E., Igumbor, E., Meyer, W.E.

“…The electronic and thermal properties of defects introduced during electron beam deposition (EBD) followed by isochronal annealing of titanium (Ti) contacts on…”
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The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes by Omotoso, E., Meyer, W.E., van Rensburg, P.J. Janse, Igumbor, E., Tunhuma, S.M., Ngoepe, P.N.M., Danga, H.T., Auret, F.D.

“…Au/Ni (20:80) Schottky barrier diodes (SBDs) were resistively evaporated on nitrogen-doped n–type 4H-SiC. Current-voltage (I-V) and capacitance-voltage (C-V)…”
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