Search Results - "Dang, G. T."

Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law by Dang, G. T., Yasuoka, T., Tagashira, Y., Tadokoro, T., Theiss, W., Kawaharamura, T.

“…This work reports growth of α-(AlxGa1-x)2O3 single crystals with high incorporation of Al by a Mist Chemical Vapor Deposition two-chamber system, which was…”
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Electrical effects of plasma damage in p-GaN by Cao, X. A., Pearton, S. J., Zhang, A. P., Dang, G. T., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of…”
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Relationship between osteopenia and lumbar intervertebral disc degeneration in ovariectomized rats by Wang, T, Zhang, L, Huang, C, Cheng, A G, Dang, G T

“…Ovariectomy (OVX) can cause bone loss in rats, but little is known about how it also induces lumbar intervertebral disc degeneration (LVD). This study…”
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Depth and thermal stability of dry etch damage in GaN Schottky diodes by Cao, X. A., Cho, H., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical…”
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In vitro and in vivo induction of bone formation based on ex vivo gene therapy using rat adipose-derived adult stem cells expressing BMP-7 by Yang, M., Ma, Q.J., Dang, G.T., Ma, K.T., Chen, P., Zhou, C.Y.

“…Adipose-derived adult stem (ADAS) cells are multipotent cells capable of differentiating into osteoblasts, adipocytes and chondrocytes. The aim of this study…”
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Schottky diode measurements of dry etch damage in n- and p-type GaN by Cao, X. A., Zhang, A. P., Dang, G. T., Ren, F., Pearton, S. J., Shul, R. J., Zhang, L.

“…n- and p-type GaN was exposed to inductively coupled plasma of N 2 , H 2 , Ar, or Cl 2 / Ar , as a function of source power (0–1000 W) and rf chuck power…”
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Occupational heat-related illness emergency department visits and inpatient hospitalizations in the southeast region, 2007-2011 by Harduar Morano, L., Bunn, T.L., Lackovic, M., Lavender, A., Dang, G.T.T., Chalmers, J.J., Li, Y., Zhang, L., Flammia, D.D.

“…Background Heat‐related illness (HRI) is an occupational health risk for many outdoor, and some indoor, workers. Methods Emergency department (ED) and…”
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Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers by Dang, G.T., Mehandru, R., Luo, B., Ren, F., Hobson, W.S., Lopata, J., Tayahi, M., Chu, S.N.G., Pearton, S.J., Chang, W., Shen, H.

“…Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity…”
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Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor by Han, J., Baca, A. G., Shul, R. J., Willison, C. G., Zhang, L., Ren, F., Zhang, A. P., Dang, G. T., Donovan, S. M., Cao, X. A., Cho, H., Jung, K. B., Abernathy, C. R., Pearton, S. J., Wilson, R. G.

“…A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic…”
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Temperature dependence of GaN high breakdown voltage diode rectifiers by Chyi, J.-I, Lee, C.-M, Chuo, C.-C, Cao, X.A, Dang, G.T, Zhang, A.P, Ren, F, Pearton, S.J, Chu, S.N.G, Wilson, R.G

“…The temperature dependence of reverse breakdown voltage ( V RB) and forward turn-on voltage ( V F) of GaN Schottky diode rectifiers is reported. The V RB…”
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Plasma damage in p-GaN by Cao, X. A., Zhang, A. P., Dang, G. T., Ren, F., Pearton, S. J., van Hove, J. M., Hickman, R. A., Shul, R. J., Zhang, L.

“…The effect of Inductively Coupled Plasma H sub(2) or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and…”
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Surface and bulk leakage currents in high breakdown GaN rectifiers by Ren, F., Zhang, A.P., Dang, G.T., Cao, X.A., Cho, H., Pearton, S.J., Chyi, J.-I., Lee, C.-M., Chuo, C.-C.

“…GaN Schottky diode rectifiers with contact diameters 125–1100 μm were fabricated on thick (4 μm) epi layers. At low reverse bias voltages the leakage current…”
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High breakdown voltage Au/Pt/GaN Schottky diodes by Dang, G. T., Zhang, A. P., Mshewa, M. M., Ren, F., Chyi, J.-I., Lee, C.-M., Chuo, C. C., Chi, G. C., Han, J., Chu, S. N. G., Wilson, R. G., Cao, X. A., Pearton, S. J.

“…Au/Pt/GaN Schottky diode rectifiers were fabricated with reverse breakdown voltage (V RB ) up to 550 V on vertically depleting structures and >2000 V on…”
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Sub-μm features patterned with laser interference lithography for the epitaxial lateral overgrowth of α-Ga2O3 via mist chemical vapor deposition by Dang, G. T., Yasuoka, T., Kawaharamura, T.

“…The low growth rate of mist chemical vapor deposition normally requires a long growth time to achieve coalescence in the epitaxial lateral overgrowth of…”
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A codon 891 exon 15 RET proto-oncogene mutation in familial medullary thyroid carcinoma: a detection strategy by Dang, G T, Cote, G J, Schultz, P N, Khorana, S, Decker, R A, Gagel, R F

“…A ser891ala RET proto-oncogene mutation has been previously discovered in a single kindred with familial medullary thyroid carcinoma (FMTC). An additional two…”
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Effects of Intermixing on Gain and Alpha Factors of Quantum-Dash Lasers by Chen, C., Wang, Y., Tan, C.L., Djie, H.S., Ooi, B.S., Hwang, J., Dang, G.T., Chang, W.H.

“…Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or…”
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GaN n- and p-type Schottky diodes: Effect of dry etch damage by Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Van Hove, J.M.

“…The reverse breakdown voltage (V/sub B/) and forward turn-on voltage (V/sub F/) of n- and p-GaN Schottky diodes were used to examine the effects of Cl/sub…”
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p-Ohmic contact resistance for GaAs(C)/GaN(Mg) by Dang, G.T, Zhang, A.P, Ren, F, Donovan, S.M, Abernathy, C.R, Hobson, W.S, Lopata, J, Chu, S.N.G, Cao, X.A, Wilson, R.G, Pearton, S.J

“…Heavily carbon-doped (p≥10 10 cm −3) GaAs layers were grown on p-GaN in attempt to reduce the p-ohmic contact resistance. While the specific contact…”
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InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging by Hery Susanto Djie, Dimas, C.E., Dong-Ning Wang, Boon-Siew Ooi, Hwang, J.C.M., Dang, G.T., Chang, W.H.

“…We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we…”
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Comparison of GaN p-i-n and Schottky rectifier performance by Zhan, A.P., Dang, G.T., Fan Ren, Hyun Cho, Kyu-Pil Lee, Pearton, S.J., Jenn-Inn Chyi, Nee, T.-Y., Chuo, C.-C.

“…The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature…”
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