Search Results - "Dan'ko, V.A."
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1
Doping the thin films by using the original Close Space Sublimation method
Published in Semiconductor physics, quantum electronics, and optoelectronics (23-03-2020)“…The review is devoted to the results of studies on the structure, morphology, optical and luminescent properties of thin films doped with the modified Close…”
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Journal Article -
2
Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation
Published in Semiconductor physics, quantum electronics, and optoelectronics (01-01-2019)“…We present results of experiments to determine the dispersion of the plasmon modes associated with Au nanowire gratings with a fixed spatial frequency (3370…”
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Journal Article -
3
Visible photoluminescence of selectively etched porous nc-Si-Si[O.sub.x] structures
Published in Semiconductors (Woodbury, N.Y.) (01-02-2010)“…The results of the first studies of the effect of selective etching on photoluminescence in porous nc-Si-Si[O.sub.x] structures containing Si nanoclusters…”
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Journal Article -
4
Photoinduced etching of thin films of chalcogenide glassy semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-04-2012)“…Photoinduced enhancement of the solubility of annealed films made of chalcogenide glassy semiconductors (ChGSs) in amine-based selective etchants has been…”
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Journal Article -
5
Luminescent and Raman study of nanostruc-tures formed upon annealing of SiOx:Sm films
Published in Semiconductor physics, quantum electronics, and optoelectronics (24-03-2023)“…ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon…”
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6
Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography
Published in Semiconductor physics, quantum electronics, and optoelectronics (09-03-2021)“…Using laterally ordered arrays of noble metal nanocavities as SERS substrates has been examined theoretically and experimentally. Simulation of the…”
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Journal Article -
7
The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag–As4Ge30S66 structures
Published in Semiconductor physics, quantum electronics, and optoelectronics (23-11-2021)“…The effect of surface plasmon-polaritons (SPPs) excited at the interface between the profiled surface of the silver layer (in the form of a diffraction…”
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Journal Article -
8
Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films
Published in Infrared physics & technology (01-03-2014)“…•We investigated SiOx〈Ti〉 films as materials for thermosensitive detectors.•In composite SiOx〈Ti〉 films the metal concentration in the dielectric matrix was…”
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Journal Article -
9
Photodoping in As 2S 3Ag structures
Published in Journal of non-crystalline solids (1995)“…The value and sign of a photo-emf appearing under optical excitation of the interface region between doped and undoped As 2S 3 are measured. This emf is…”
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Journal Article -
10
Photodoping in As2S3-Ag structures
Published in Journal of non-crystalline solids (01-05-1995)Get full text
Journal Article -
11
Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix
Published in 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) (01-09-2012)“…We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO 2 results in…”
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Conference Proceeding -
12
Formation of light-emitting structure on the base of porous SIOx films
Published in The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004 (2004)“…This work presents the first study of porous light-emitting nc-Si-SiO x structures obtained by oblique evaporation of SiO in vacuum and thermal post-annealing…”
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Conference Proceeding