Search Results - "Dammann, M."

Entrained flow gasification. Part 2: Mathematical modeling of the gasifier using RANS method by Mancini, M., Alberti, M., Dammann, M., Santo, U., Eckel, G., Kolb, T., Weber, R.

“…CFD (RANS based) simulations of REGA-1 experimental campaign concerning gasification of glycol in an oxygen-nitrogen mixture have been carried out. The…”
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Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs by Doring, P., Basler, M., Reiner, R., Monch, S., Driad, R., Dammann, M., Mikulla, M., Quay, R.

“…We report on the development of the co-integration of a common lateral HEMT (high-electron mobility transistor) technology with vertical GaN devices based on a…”
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Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations by Ercolano, F., Balestra, L., Krause, S., Leone, S., Streicher, I., Waltereit, P., Dammann, M., Reggiani, S.

“…The reliability issues of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated through technology computer-aided design (TCAD) simulations in…”
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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs by Wespel, M., Polyakov, V. M., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

“…In this paper, we investigate the influence of the drain electrode on the dynamic switching behavior of AlGaN/GaN high-electron-mobility transistors on Si…”
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Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies by Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.

“…In this paper, we outline the current state of the art and trends for future development in millimeter-wave (mmw) amplifiers based on gallium nitride (GaN)…”
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The threshold of toxicological concern for prenatal developmental toxicity by van Ravenzwaay, B., Dammann, M., Buesen, R., Schneider, S.

“…The Threshold Toxicological Concern (TTC) is based on the concept that reasonable assurance of safety can be given if exposure is sufficiently low. Originally…”
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High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier by Carrubba, V., Maroldt, S., Musser, M., Ture, E., Dammann, M., van Raay, F., Quay, R., Bruckner, P., Ambacher, O.

“…This letter presents the realization of a high-efficiency, high-temperature Continuous Class-E Sub-Waveform Solution power amplifier using for the first time…”
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Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress by Dammann, M., Baeumler, M., Kemmer, T., Konstanzer, H., Bruckner, P., Krause, S., Graff, A., Simon-Najasek, M.

“…Degradation of 100 nm AlGaN/GaN HEMTs under DC and 10 GHz stress conditions has been compared and a promising median lifetime of more than 2000 h under RF…”
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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices by Wespel, M., Baeumler, M., Polyakov, V., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

“…•We estimate the surface state density by two independent techniques, CV and EL.•Investigation of electrical field distribution dependent on surface state…”
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The threshold of toxicological concern for prenatal developmental toxicity in rabbits and a comparison to TTC values in rats by van Ravenzwaay, B., Dammann, M., Buesen, R., Flick, B., Schneider, S.

“…► Fifth percentile of 104 NOAELs of rabbit developmental tox studies is 2mg/kgbw. ► A TTC value for rabbit developmental toxicity of 4μg/kgbw/d was calculated…”
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Selection for conformation and conformational homogeneity of litters in the German shepherd dog by Stock, K. F, Dammann, M, Distl, O

“…Breeding standards of most dog breeds specify tolerable ranges of certain conformation traits. In the German shepherd dog (GSD), current means for withers…”
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Qualification of 50 V GaN on SiC technology for RF power amplifiers by Wel, P J, Roedle, T, Lambert, B, Blanck, H, Dammann, M

“…This paper describes the qualification of the 50 V, 0.5 mu m GaN on SiC process that has been released at the III-V fab of UMS in Ulm in cooperation with IAF…”
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In silico models to predict dermal absorption from complex agrochemical formulations by Guth, K., Riviere, J.E., Brooks, J.D., Dammann, M., Fabian, E., van Ravenzwaay, B., Schäfer-Korting, M., Landsiedel, R.

“…Dermal absorption is a critical part in the risk assessment of complex mixtures such as agrochemical formulations. To reduce the number of in vivo or in vitro…”
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Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs by Cäsar, M., Dammann, M., Polyakov, V., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

“…The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We first demonstrate that at a certain electric field…”
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Neurological complications after cadaveric and living donor liver transplantation by SANER, Fuat H, YANLI GU, MALAGO, Massimo, BROELSCH, Christoph E, MINOUCHEHR, Shahin, ILKER, Kavuk, FRUHAUF, Nils R, PAUL, Andreas, RADTKE, Arnold, DAMMANN, Marc, KATSARAVA, Zaza, KOEPPEN, Susanne

“…Problems related to the central nervous system have a major impact on survival and quality of life. The aim of this retrospective study was to evaluate the…”
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GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability by Waltereit, P., Bronner, W., Quay, R., Dammann, M., Kiefer, R., Müller, S., Musser, M., Kühn, J., Raay, F. van, Seelmann, M., Mikulla, M., Ambacher, O., Rijs, F. van, Rödle, T., Riepe, K.

“…We present a systematic study of epitaxial growth, processing technology, device performance and reliability of our GaN HEMTs and MMICs manufactured on 3 inch…”
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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems by Dammann, M., Pletschen, W., Waltereit, P., Bronner, W., Quay, R., Müller, S., Mikulla, M., Ambacher, O., van der Wel, P.J., Murad, S., Rödle, T., Behtash, R., Bourgeois, F., Riepe, K., Fagerlind, M., Sveinbjörnsson, E.Ö.

“…Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF…”
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High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates by Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Kiefer, R., Raynor, B., Mikulla, M., Weimann, G.

“…We report on device performance and reliability of our 3″ GaN high electron mobility transistor (HEMT) technology. AlGaN/GaN HEMT structures are grown on…”
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Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs by Dammann, M., Leuther, A., Benkhelifa, F., Feltgen, T., Jantz, W.

“…The long‐term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature…”
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Role of timbre and fundamental frequency in voice gender adaptation by Skuk, Verena G, Dammann, Lea M, Schweinberger, Stefan R

“…Prior adaptation to male (or female) voices causes androgynous voices to be perceived as more female (or male). Using a selective adaptation paradigm the…”
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