Search Results - "Dai, Siwei"
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Comprehensive analysis of the effect of structural parameters on erosion wear, structural stress, and deformation of high-pressure double-elbow in shale-gas fracturing
Published in Heliyon (30-08-2024)“…In field hydraulic fracturing operation of shale gas development, the high pressure and large displacement liquid-particle two-phase fracturing fluid can be…”
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Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
Published in Journal of Materiomics (01-05-2022)“…Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed…”
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Discovering the role of trade diversification, natural resources, and environmental policy stringency on ecological sustainability in the BRICST region
Published in Resources policy (01-08-2023)“…Understanding the role of trade diversification, natural resources, and environmental policies is crucial for achieving ecological sustainability. By…”
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Study on the erosion performance of high-pressure double elbow based on experiment and numerical simulation
Published in Tribology international (01-09-2023)“…Fluctuating stress of material strongly influences erosion to some extent, especially for high-pressure pipelines. However, this important influence is usually…”
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Causality between multi-scale built environment and rail transit ridership in Beijing and Tokyo
Published in Transportation research. Part D, Transport and environment (01-05-2024)“…Recent years have witnessed researchers' academic interests in the relationship between the built environment and rail transit ridership. However, few studies…”
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Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications
Published in Advanced functional materials (02-12-2022)“…The highly scalable ferroelectric hafnia‐based thin films can be easily integrated into ferroelectric field‐effect transistors (FeFETs) by existing Si…”
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Digital economy, resource richness, external conflicts, and ecological footprint: Evidence from emerging countries
Published in Resources policy (01-08-2023)“…The overexploitation and unsustainable utilization of important natural resources owing to economic progress have accelerated the negative externalities of…”
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Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor
Published in Advanced functional materials (01-04-2021)“…The ferroelectric field‐effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity…”
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Digital trade, trade openness, FDI, and green total factor productivity
Published in International review of financial analysis (01-11-2024)Get full text
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Experimental study on erosion behavior of fracturing pipelines involving fluctuating stress
Published in Wear (15-04-2023)“…Erosive wear due to particle impact serves as the main cause of pipeline failure. During hydraulic fracturing, fracturing pipelines inevitably suffer erosion…”
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Iron/TEMPO-catalyzed direct aerobic oxidative coupling of methyl-mubstituted N-heteroazaarenes with alcohols
Published in Tetrahedron letters (21-05-2020)“…An iron/TEMPO catalyzed aerobic oxidative coupling reaction of methyl-substituted N-heteroazaarenes with alcohols afforded various E-disubstituted olefins in…”
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Scandium-catalyzed Michael addition of quinazolinones and vinylazaarenes
Published in Tetrahedron letters (04-06-2020)“…[Display omitted] •Excellent chemo selectivity.•Broad substrate and functional group compatibility.•Readily available starting materials and the catalyst. We…”
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Orientation Independent Growth of Uniform Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films on Silicon for High‐Density 3D Memory Applications
Published in Advanced functional materials (01-12-2022)“…Abstract The highly scalable ferroelectric hafnia‐based thin films can be easily integrated into ferroelectric field‐effect transistors (FeFETs) by existing Si…”
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14
Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2‑Based Ferroelectric Field-Effect Transistors
Published in ACS applied materials & interfaces (16-11-2022)“…The ferroelectric field-effect transistors (FeFETs) with HfO2-based ferroelectric layers in the gate stacks are emerging as one of the most promising…”
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The impact of prenatal exposure to fine particulate matter and its components on maternal and neonatal thyroid function and birth weight: a prospective cohort study
Published in Environmental geochemistry and health (01-12-2024)“…Maternal and child health has garnered considerable attention recently. The effects of prenatal exposure to PM2.5 and its components on thyroid function in…”
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HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
Published in Fundamental research (Beijing) (01-05-2023)“…The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power…”
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Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor
Published in Advanced functional materials (01-04-2021)“…Abstract The ferroelectric field‐effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high…”
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HfO 2 -based ferroelectric thin film and memory device applications in the post-Moore era: A review
Published in Fundamental research (Beijing) (01-05-2023)“…The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power…”
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Instruction of the technical evaluation for medical devices kits
Published in Zhongguo yi liao qi xie za zhi (01-05-2013)“…Recent years, the development of medical devices kits is rapid. How to make the technical evaluation of medical devices kits more perfect bases on the two…”
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