Search Results - "Dahlberg, Hannes"

  • Showing 1 - 7 results of 7
Refine Results
  1. 1
    Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor

    Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor by Karthik Ram, Mamidala, Dahlberg, Hannes, Wernersson, Lars-Erik

    Published in IEEE electron device letters (01-10-2024)
    “…Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  2. 2
    Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

    Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films by Dahlberg, Hannes, Wernersson, Lars-Erik

    “…The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:
  3. 3
    Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2

    Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 by Dahlberg, Hannes, Persson, Anton E.O., Athle, Robin, Wernersson, Lars Erik

    Published in ACS applied electronic materials (27-12-2022)
    “…The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf1-xZrxO2 (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  4. 4
    Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2

    Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 by Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik

    Published in ACS applied electronic materials (27-12-2022)
    “…The ferroelectric (FE)–antiferroelectric (AFE) transition in Hf 1– x Zr x O 2 (HZO) is for the first time shown in a metal–ferroelectric–semiconductor (MFS)…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  5. 5
    Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification

    Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification by Fhager, Lars Ohlsson, Heunisch, Sebastian, Dahlberg, Hannes, Evertsson, Anton, Wernersson, Lars-Erik

    Published in IEEE sensors letters (01-12-2019)
    “…A pulsed millimeter wave radar operating at a frame rate of 144 Hz is utilized to record 2160 scattering signatures of 12 generic hand gestures. Gesture…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  6. 6
    Ferroelectric-Antiferroelectric Transition of Hf1–x Zr x O2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2

    Ferroelectric-Antiferroelectric Transition of Hf1–x Zr x O2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 by Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik

    Published in ACS applied electronic materials (27-12-2022)
    “…The ferroelectric (FE)–antiferroelectric (AFE) transition in Hf1–x Zr x O2 (HZO) is for the first time shown in a metal–ferroelectric–semiconductor (MFS) stack…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  7. 7
    Ferroelectric-Antiferroelectric Transition of Hf 1- x Zr x O 2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf 0.2 Zr 0.8 O 2

    Ferroelectric-Antiferroelectric Transition of Hf 1- x Zr x O 2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf 0.2 Zr 0.8 O 2 by Dahlberg, Hannes, Persson, Anton E O, Athle, Robin, Wernersson, Lars-Erik

    Published in ACS applied electronic materials (27-12-2022)
    “…The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf Zr O (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack based…”
    Get full text
    Journal Article
    Save to List
    Saved in:

Search Tools: