Search Results - "Dae-Gyu Park"

Experimental Study of Gate-First FinFET Threshold-Voltage Mismatch by Qintao Zhang, Wang, Cindy, Hailing Wang, Schnabel, Christopher, Dae-Gyu Park, Springer, Scott K., Leobandung, Effendi

“…In this brief, threshold voltage mismatch of fully integrated n-type FinFETs based on a gate-first process was studied experimentally. Significantly improved…”
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CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm by Majumdar, Amlan, Yanning Sun, Cheng-Wei Cheng, Young-Hee Kim, Rana, Uzma, Martin, Ryan M., Bruce, Robert L., Kuen-Ting Shiu, Yu Zhu, Farmer, Damon B., Hopstaken, Marinus, Joseph, Eric A., de Souza, Joel P., Frank, Martin M., Szu-Lin Cheng, Kobayashi, Masaharu, Duch, Elizabeth A., Sadana, Devendra K., Dae-Gyu Park, Leobandung, Effendi

“…We demonstrate self-aligned fully-depleted 20-nm-thick In 0.53 Ga 0.47 As-channel MOSFETs using CMOS-compatible device structures and manufacturable process…”
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Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT by Hashemi, Pouya, Kam-Leung Lee, Ando, Takashi, Balakrishnan, Karthik, Ott, John A., Koswatta, Syuranga, Engelmann, Sebastian U., Dae-Gyu Park, Narayanan, Vijay, Mo, Renee T., Leobandung, Effendi

“…We demonstrate high-performance (HP) High-Ge-Content (HGC) SiGe pMOS FinFETs with scaled EOT and improved junction. For the first time, SiGe FinFET EOT scaling…”
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On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors by Jin Cai, Ning, Tak H., D'Emic, Christopher P., Jeng-Bang Yau, Chan, Kevin K., Joonah Yoon, Muralidhar, Ramachandran, Dae-Gyu Park

“…The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the…”
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A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices by Muralidhar, R., Jin Cai, Lauer, I., Chan, K., Kulkarni, P., Young-Hee Kim, Zhibin Ren, Dae-Gyu Park, Oldiges, P., Shahidi, G.

“…The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and…”
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High- \kappa/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length by Khater, M.H., Zhen Zhang, Jin Cai, Lavoie, C., D'Emic, C., Qingyun Yang, Bin Yang, Guillorn, M., Klaus, D., Ott, J.A., Yu Zhu, Ying Zhang, Changhwan Choi, Frank, M.M., Kam-Leung Lee, Narayanan, V., Dae-Gyu Park, Qiqing Ouyang, Haensch, W.

“…Schottky source/drain (S/D) MOSFETs hold the promise for low series resistance and extremely abrupt junctions, providing a path for device scaling in…”
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Effects of fluorine and chlorine on the gate oxide integrity of W/TiN/SiO2/Si metal-oxide-semiconductor structure by PARK, Dae-Gyu, KIM, Tae-Kyun

“…We investigate the effects of fluorine (F) and chorine (Cl) on the gate oxide integrity of W/TiN/SiO2 (3 nm)/Si metal--oxide--semiconductor (MOS) structure as…”
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Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes by Cha, Tae-Ho, Park, Dae-Gyu, Kim, Tae-Kyun, Jang, Se-Aug, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

“…Work function and thermal stability of reactive sputtered Ti1−xAlxNy films were investigated for a metal gate electrode using a metal–oxide–semiconductor (MOS)…”
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Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures by Park, Dae-Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Cha, Tae-Ho, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

“…We demonstrate the impact of atomic-layer-deposited TiN gate on the characteristics of W/TiN/SiO2/p-Si metal–oxide–semiconductor (MOS) systems. Damage-free…”
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Electrical and Structural Properties of Nanolaminate (Al 2 O 3 /ZrO 2 /Al 2 O 3 ) for Metal Oxide Semiconductor Gate Dielectric Applications by Jeon, Sanghun, Yang, Hyundoek, Park, Dae-Gyu, Hwang, Hyunsang

“…Authors investigated electrical and material properties of an ultrathin nanolaminate (Al2O3/ZrO2/Al2O3) structure, prepared by atomic-layer CVD (ALCVD), for…”
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Pressure-sensitive adhesive composites with a hydrophobic form of graphene oxide for enhanced thermal conductivity by Vu, Minh Canh, Park, Gyu-Dae, Bae, Yong-Han, Yu, Min Ji, An, Tae Kyu, Lee, Sung-Goo, Kim, Sung-Ryong

“…Pressure-sensitive adhesive (PSA) composites containing oleylamine functionalized graphene oxide (OA-f-GO) fillers were prepared. The effects of the surface…”
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Preparation and characterization of expanded graphite intercalation compound/UV-crosslinked acrylic resin pressure sensitive adhesives by Park, Gyu-Dae, Jung, Hyun-Ok, Kim, Kyung-Min, Lim, Jung-Hyurk, Lee, Ju-Won, Lee, Sung-Goo, Lee, Jae Heung, Kim, Sung-Ryong

“…The expanded graphite intercalated compound (xGIC)/pressure sensitive adhesives (PSAs) were prepared by syrup process and in situ process. The effects of xGIC…”
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Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond by Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Khakifirooz, Ali, Wanki Kim, Baraskar, Ashish, Yang, Li A., Chan, Kevin, Engelmann, Sebastian U., Ott, John A., Antoniadis, Dimitri A., Leobandung, Effendi, Dae-Gyu Park

“…We demonstrate high performance (HP) s-SiGe pMOS finFETs with I on /I eff of ~1.05/0.52mA/μm and ~1.3/0.71mA/μm at I off =100nA/μm at V DD =0.8 and 1V,…”
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Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs by Balakrishnan, Karthik, Hashemi, Pouya, Ott, John A., Leobandung, Effendi, Park, Dae-Gyu

“…Strained silicon germanium (s-SiGe) pMOS finFETs have proven benefits over silicon p-MOSFETs due to their superior transport properties which is attributed to…”
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EFFECTS OF IRRADIATION ON THERMAL CONDUCTIVITY OF ALLOY 690 AT LOW NEUTRON FLUENCE by RYU, WOO SEOG, PARK, DAE GYU, SONG, UNG SUP, PARK, JIN SEOK, AHN, SANG BOK

“…Alloy 690 has been selected as a steam generator tubing material for SMART owing to a near immunity to primary water stress corrosion cracking. The steam…”
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Polymerization of a Photochromic Diarylethene by Friedel−Crafts Alkylation by Jeong, Yong-Chul, Park, Dae Gyu, Kim, Eunkyoung, Yang, Sung Ik, Ahn, Kwang-Hyun

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Optimal supplementation of dexamethasone for clinical purposed expansion of mesenchymal stem cells for bone repair by Park, Dae Gyu, Kim, Kyung Gon, Lee, Tae-Jin, Kim, Joo-Young, Sung, Eon Gi, Song, In-Hwan, Ahn, Myun-Whan

“…Although mesenchymal stem cells (MSCs) are generally considered to represent a very promising tool for bone repair, no optimal protocol has yet been developed…”
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Characteristics of Si3N4/Si/ n -GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate by Park, Dae-Gyu, Diatezua, Deda M., Chen, Zhi, Mohammad, S. Noor, Morkoç, Hadis

“…Interfacial properties of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) capacitors grown on GaAs(111)B prepared with a combination of in situ…”
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Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation by Cho, Heung-Jae, Lim, Kwan-Yong, Lee, Jeong-Youb, Park, Dae-Gyu, Yeo, In-Seok, Lee, Jung-Ho, Roh, Jae-Sung

“…The thickness of gate oxides grown on the Si-implanted (7 keV, 1 x 1015 cm-2) substrate (Si I/I oxide) increased to a constant amount of approximately 9…”
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Complementary thin-base symmetric lateral bipolar transistors on SOI by Jin Cai, Ning, T. H., D'Emic, C., Chan, K. K., Haensch, W. E., Jeng-Bang Yau, Dae-Gyu Park

“…CMOS and bipolar technologies are intrinsically distinct. To take advantage of the beneficial attributes of both will drive expensive high mask count…”
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