Search Results - "Dadgar, A"

Strain Engineering and Raman Spectroscopy of Monolayer Transition Metal Dichalcogenides by Dadgar, A. M, Scullion, D, Kang, K, Esposito, D, Yang, E. H, Herman, I. P, Pimenta, M. A, Santos, E.-J. G, Pasupathy, A. N

“…We describe a facile technique based on polymer encapsulation to apply several percent (>5%) controllable strains to monolayer and few-layer transition metal…”
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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications by Neugebauer, S., Hoffmann, M. P., Witte, H., Bläsing, J., Dadgar, A., Strittmatter, A., Niermann, T., Narodovitch, M., Lehmann, M.

“…We report on III-Nitride blue light emitting diodes (LEDs) comprising a GaN-based tunnel junction (TJ) all realized by metalorganic vapor phase epitaxy in a…”
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Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case by Hildebrandt, R., Sturm, C., Wieneke, M., Dadgar, A., Grundmann, M.

“…The classical Raman tensor approach does not work for optically anisotropic materials in general. For the transparency regime, this can be circumvented by…”
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High Si and Ge n-type doping of GaN doping - Limits and impact on stress by Fritze, S., Dadgar, A., Witte, H., Bügler, M., Rohrbeck, A., Bläsing, J., Hoffmann, A., Krost, A.

“…We report on GaN n-type doping using silane, germane, and isobutylgermane as Si and Ge dopants, respectively. A significant increase in tensile stress during…”
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Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction by Ciprian, L., Mihalic, S., Lüttich, C., Hörich, F., Wade, E., Christian, B., Dadgar, A., Ambacher, O.

“…Scandium nitride (ScN) has emerged as a promising material in various fields due to its exceptional characteristics, including high mechanical strength,…”
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Performance comparison of neural network training algorithms in modeling of bimodal drug delivery by Ghaffari, A., Abdollahi, H., Khoshayand, M.R., Bozchalooi, I. Soltani, Dadgar, A., Rafiee-Tehrani, M.

“…The major aim of this study was to model the effect of two causal factors, i.e. coating weight gain and amount of pectin–chitosan in the coating solution on…”
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GaN-Based Devices on Si by Krost, A., Dadgar, A.

“…Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in…”
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Growth of blue GaN LED structures on 150-mm Si(1 1 1) by Dadgar, A., Hums, C., Diez, A., Bläsing, J., Krost, A.

“…Up to 5.4-μm thick GaN on Si light emitting diode (LED) structures were grown by metalorganic chemical vapor phase epitaxy (MOVPE) on 150 mm Si(1 1 1)…”
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Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction by Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A

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Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction by Holý, V., Kriegner, D., Lesnik, A., Bläsing, J., Wieneke, M., Dadgar, A., Harcuba, P.

“…X-ray nanodiffraction was used for the investigation of basal stacking faults in a-GaN microcrystallites. The method made it possible to find the positions of…”
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Germanium - the superior dopant in n-type GaN by Nenstiel, C., Bügler, M., Callsen, G., Nippert, F., Kure, T., Fritze, S., Dadgar, A., Witte, H., Bläsing, J., Krost, A., Hoffmann, A.

“…We present an experimental study about the influence of Si and Ge doping in GaN with focus on the occurring strain levels and overall crystalline quality…”
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Atomic arrangement at the AlN/Si (111) interface by Liu, R., Ponce, F. A., Dadgar, A., Krost, A.

“…High-quality GaN epilayers have been grown on Si (111) substrates by metalorganic vapor phase epitaxy using a low-temperature AlN nucleation layer. The atomic…”
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Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ  SixNy masking by Dadgar, A., Poschenrieder, M., Bläsing, J., Fehse, K., Diez, A., Krost, A.

“…Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The…”
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Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range by Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E.

“…The authors present a detailed study of Al 1 − x In x N layers covering the whole composition range of 0.09 < x < 1 . All layers were grown on GaN on Si(111)…”
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High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) by Dadgar, A., Schulze, F., Bläsing, J., Diez, A., Krost, A., Neuburger, M., Kohn, E., Daumiller, I., Kunze, M.

“…Al In N ∕ Ga N heterostructures have been proposed to possess advantageous properties for field-effect transistors (FETs) over AlGaN∕GaN [Kuzmík, IEEE Electron…”
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Termination of hollow core nanopipes in GaN by an AlN interlayer by Contreras, O., Ruiz-Zepeda, F., Avalos-Borja, M., Dadgar, A., Krost, A.

“…Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations…”
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MOVPE growth of GaN on Si – Substrates and strain by Dadgar, A., Veit, P., Schulze, F., Bläsing, J., Krtschil, A., Witte, H., Diez, A., Hempel, T., Christen, J., Clos, R., Krost, A.

“…GaN on Si offers a promising technology for the low-cost production of wide-bandgap devices. Here, we present approaches towards the growth of GaN on…”
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GaN-based epitaxy on silicon: stress measurements by Krost, A., Dadgar, A., Strassburger, G., Clos, R.

“…We present an in situ method for the determination of the stress in GaN layers on hetero‐substrates, in particular Si, via measuring the wafer curvature. For…”
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Local p -type conductivity in zinc oxide dual-doped with nitrogen and arsenic by Krtschil, A., Dadgar, A., Oleynik, N., Bläsing, J., Diez, A., Krost, A.

“…A doping approach for p -type ZnO is reported which is reproducible and long-time stable. For p -type doping the zinc oxide layers were doped simultaneously…”
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Peripartum pubic symphysis separation – Current strategies in diagnosis and therapy and presentation of two cases by Herren, C, Sobottke, R, Dadgar, A, Ringe, M.J, Graf, M, Keller, K, Eysel, P, Mallmann, P, Siewe, J

“…Abstract Background During spontaneous vaginal delivery, pubic symphyseal widening is normal. Common changes are reversible after complication-free birth…”
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