Search Results - "Dacenko, O.I"
-
1
Mechanistic interpretation of the varying selectivity of Cesium-137 and potassium uptake by radish (Raphanus sativus L.) under field conditions near Chernobyl
Published in Journal of environmental radioactivity (01-02-2016)“…The selectivity of cation uptake by radish (Raphanus sativus L.) growing in the field near Chernobyl varies during the growth season. It is hypothesised that…”
Get full text
Journal Article -
2
Comparison of semi-insulating InAlAs and InP:Fe for InP-based buried-heterostructure QCLs
Published in Journal of crystal growth (01-09-2015)“…In a previous work [Flores et al., J. Cryst. Growth 398 (2014) 40] [3] we demonstrated the advantages of using a thin InAlAs spacer layer in the fabrication of…”
Get full text
Journal Article -
3
Dependence of the concentrations of 137Cs and potassium in extracted soil solutions on soil humidity before centrifugation
Published in I͡A︡derna fizyka ta enerhetyka (01-08-2017)“…Concentrations of 137Cs and potassium in solutions extracted by centrifugation from soils selected at some experimental sites in the 10-km Exclusion Zone of…”
Get full text
Journal Article -
4
Effect of ultrasound treatment on the optical properties of C 60 fullerene films
Published in Chemical physics letters (2008)“…Photoluminescence spectra of initial C 60 film and the sample after ultrasound treatment are studied. The ultrasonic treatment decreases the integral intensity…”
Get full text
Journal Article -
5
Effect of ultrasound treatment on the optical properties of C60 fullerene films
Published in Chemical physics letters (15-12-2008)Get full text
Journal Article -
6
Ellipsometric studies of porous silicon
Published in Thin solid films (26-03-1999)“…The principal angle and ellipticity of the light beam reflected from the surface of porous silicon (PS) and the dependence on the angle-of-incidence of the…”
Get full text
Journal Article -
7
Evolution of the porous silicon sample properties in the atmospheric ambient
Published in Journal of luminescence (01-06-1999)“…Evolution of the integral intensity of the photoluminescence (IIPL) of untreated and treated (48% HF etched) porous silicon (PS) samples is studied in samples…”
Get full text
Journal Article -
8
Effect of boron diffusion doping of silicon on the micromechanical and luminescent properties of porous layers
Published in Thin solid films (14-01-1998)“…The effect of boron diffusion on the microhardness and photoluminescent properties of porous silicon layers obtained conventionally by anode etching is…”
Get full text
Journal Article