Search Results - "Dacal, L. C. O."

Titanium nitride: a key to process metallic uranium by de Vasconcelos, G., Dacal, L. C. O., Sbampato, M. E., Rodrigues, N. A. S., Martinelli, J. R.

“…Metallic uranium is very reactive at the high temperatures used for its processing [1]; therefore special refractory crucibles must be employed. This work…”
Get full text

Polarized and resonant Raman spectroscopy on single InAs nanowires by Möller, M., de Lima, M. M., Cantarero, A., Dacal, L. C. O., Madureira, J. R., Iikawa, F., Chiaramonte, T., Cotta, M. A.

Get full text

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties by Dacal, L. C. O, Cantarero, A

“…Materials Research Express 1, 015702 (2014) Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite…”
Get full text

Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices by de Carvalho, H. B., Brasil, M. J. S. P., Lopez-Richard, V., Galvão Gobato, Y., Marques, G. E., Camps, I., Dacal, L. C. O., Henini, M., Eaves, L., Hill, G.

Get full text

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations by Gadret, E. G., Dias, G. O., Dacal, L. C. O., de Lima, M. M., Ruffo, C. V. R. S., Iikawa, F., Brasil, M. J. S. P., Chiaramonte, T., Cotta, M. A., Tizei, L. H. G., Ugarte, D., Cantarero, A.

Get full text

Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires [Phys. Rev. B 84 , 085318 (2011)] by Möller, M., de Lima, M. M., Cantarero, A., Dacal, L. C. O., Madureira, J. R., Iikawa, F., Chiaramonte, T., Cotta, M. A.

Get full text

Negative Trion Binding Energy in Semiconductor Quantum Wells: Effects of Structural Confinement and Longitudinal Electric Field by Dacal, L.C.O., Brum, J.A.

“…We present variational calculations of the binding energy for negatively charged excitons in idealized GaAs/Al0.3Ga0.7As quantum wells using a physically clear…”
Get full text

Binding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface Defects by Dacal, L.C.O., Ferreira, R., Bastard, G., Brum, J.A.

“…We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al0.3Ga0.7As quantum wells. The…”
Get full text

Local field and potential barrier in tunneling processes by Mollicone, M.M., Dacal, L.C.O., de Castilho, C.M.C.

“…Ionisation rate-constants in conditions of imaging processes in field ion microscopy are calculated by considering a local electric field that varies along the…”
Get full text

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices by de Carvalho, H. B, Brasil, M. J. S. P, Lopez-Richard, V, Camps, I, Gobato, Y. Galvao, Marques, G. E, Dacal, L. C. O, Henini, M, Eaves, L, Hill, G

“…We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit…”
Get full text