Search Results - "DUSSAULT, Laurent"

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  1. 1
    Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

    Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V by PIALLAT, Fabien, BEUGIN, Virginie, GASSILLOUD, Remy, DUSSAULT, Laurent, PELISSIER, Bernard, LEROUX, Charles, CAUBET, Pierre, VALLEE, Christophe

    Published in Applied surface science (01-06-2014)
    “…Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO2 was studied by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking…”
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    Journal Article
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  2. 2
    Evaluation of plasma parameters on PEALD deposited TaCN

    Evaluation of plasma parameters on PEALD deposited TaCN by Piallat, Fabien, Beugin, Virginie, Gassilloud, Remy, Michallon, Philippe, Dussault, Laurent, Pelissier, Bernard, Asikainen, Timo, Maes, Jan Willem, Martin, François, Morin, Pierre, Vallée, Christophe

    Published in Microelectronic engineering (01-07-2013)
    “…[Display omitted] ► Tuning TaCN deposited material from TaN-like to TaC-like was possible using plasma. ► Influence of plasma power on TaCN properties is…”
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    Journal Article Conference Proceeding
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