Search Results - "DUNLAVY, D. J"

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces by Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E.

“…Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by…”
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Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling by AHRENKIEL, R. K, DUNLAVY, D. J, KEYES, B, VERNON, S. M, DIXON, T. M, TOBIN, S. P, MILLER, K. L, HAYES, R. E

“…The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition…”
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A new lifetime diagnostic system for photovoltaic materials by Ahrenkiel, R K, Dunlavy, D J, Simonds, B

“…We have developed an apparatus for measuring the minority-carrier or recombination lifetime in semiconductors. We have named the technique transmission…”
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Electron mobility in p-GaAs by time of flight by AHRENKIEL, R. K, DUNLAVY, D. J, GREENBERG, D, SCHLUPMANN, J, HAMAKER, H. C, MACMILLAN, H. F

“…The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique…”
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Minority-carrier properties of GaAs on silicon by AHRENKIEL, R. K, AL-JASSIM, M. M, DUNLAVY, D. J, JONES, K. M, VERNON, S. M, TOBIN, S. P, HAVEN, V. E

“…The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing…”
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Defect level identification in copper indium selenide (CuInSe2) from photoluminescence studies by Dagan, Geula, Abou-Elfotouh, F, Dunlavy, D. J, Matson, R. J, Cahen, David

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Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescence by TIMMONS, M. L, COLPITTS, T. S, VENKATASURBRAMANIAN, R

“…Time-resolved photoluminescence has been used to examine AlxGa1−xAs/AlyGa1−yAs interfaces, focusing on the recombination velocity. For an…”
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Studies of the electrical and interface properties of the metal contacts to CuInSe2 single crystals by Abou‐Elfotouh, F. A., Kazmerski, L. L., Matson, R. J., Dunlavy, D. J., Coutts, T. J.

“…The electrical behavior of the metal contacts and ITO and CdS junctions to single crystals of CuInSe2 has been studied using I–V and electron beam induced…”
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Minority-carrier lifetime in GaAs thin films by AHRENKIEL, R. K, DUNLAVY, D. J, BENNER, J, GALE, R. P, MCCLELLAND, R. W, GORMLEY, J. V, KING, B. D

“…Double-heterostructure devices of type AlxGa1−xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process…”
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Photoluminescence spectra of some ternary and quaternary chalcopyrite semiconductors by Abou‐Elfotouh, F., Dunlavy, D. J., Kazmerski, L. L., Albin, D., Bachman, K. J., Menner, R.

“…Photoluminescence (PL) emission spectra of single crystals and thin films of CuGa x In1−x Se2 compounds have been investigated at various measuring…”
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Recombination velocity of the Ga0.5In0.5P/GaAs interface by Ahrenkiel, R. K., Olson, J. M., Dunlavy, D. J., Keyes, B. M., Kibbler, A. E.

“…Double heterostructures have been grown with the structure Ga0.5In0.5P/GaAs/Ga0.5In0.5P by metalorganic chemical vapor deposition (MOCVD). These GaAs active…”
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Minority carrier diffusion length of p‐GaAs determined by time‐of‐flight by Keyes, B. M., Dunlavy, D. J., Ahrenkiel, R. K., Asher, S. E., Partain, L. D., Liu, D. D., Kuryla, M. S.

“…A diffusion time‐of‐flight (TOF) technique is described and analysis is performed on four different p‐GaAs heterostructure devices. These p/n junction devices…”
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A new saturable absorber for the CO2 laser using doped KCl by Ahrenkiel, R. K., Figueira, J. F., Phipps, C. R., Dunlavy, D. J., Thomas, S. J., Sievers, A. J.

“…A new class of saturable absorbers for 10-μm applications using doped alkali halides is demonstrated. For the ReO−4 molecular ion in KCl, the vibrational…”
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Time-of-flight studies of minority-carrier diffusion in AlxGa1-xAs homojunctions by AHRENKIEL, R. K, DUNLAVY, D. J, HAMAKER, H. C, GREEN, R. T, LEWIS, C. R, HAYES, R. E, FARDI, H

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III-V compound process development using photoluminescence lifetime by Ahrenkiel, R.K., Dunlavy, D.J., Timmons, M.L.

“…The development of processing techniques for the Al/sub x/Ga/sub 1-x/As alloys for solar cells was expedited by using photoluminescence lifetime as a processor…”
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Minority carrier lifetime of GaAs on silicon by Ahrenkiel, R.K., Al-Jassim, M.M., Dunlavy, D.J., Jones, K.M., Vernon, S.M., Tobin, S.P., Haven, V.E.

“…AlGaAs/GaAs double heterostructures for solar cells were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices…”
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Minority‐carrier lifetime in Al x Ga1−x As by Ahrenkiel, R. K., Dunlavy, D. J.

“…The minority‐carrier lifetime of Al x Ga1−x As has been measured in epitaxial materials grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor…”
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Ultralow recombination velocity at Ga0.5In0.5P/GaAs heteroointerfaces by OLSON, J. M, AHRENKIEL, R. K, DUNLAVY, D. J, KEYES, B, KIBBLER, A. E

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Time-of-flight studies of minority-carrier diffusion in Al x Ga1− x As homojunctions by Ahrenkiel, R. K., Dunlavy, D. J., Hamaker, H. C., Green, R. T., Lewis, C. R., Hayes, R. E., Fardi, H.

“…A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser…”
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A new class of saturable absorbers at 10.6 micron based on doped alkali halides by Ahrenkiel, R K, Dunlavy, D J, Sievers, A J

“…A new class of saturable absorbers for 10.6 micron CO2 laser wavelengths, uses alkali halides doped with the perrhenate ion. Here the nu sub 3 vibrational…”
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