Search Results - "DUCROQUET, Frédérique"

Dielectric properties, conductivity and Li+ ion motion in LiPON thin films by Le Van-Jodin, Lucie, Ducroquet, Frédérique, Sabary, Frédéric, Chevalier, Isabelle

“…LiPON films are prepared by Radio Frequency sputtering on 200mm silicon wafers. LiPON elemental composition is investigated by RBS and NRA. Ionic conductivity…”
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Potential Fluctuations and Localization Effects in CZTS Single Crystals, as Revealed by Optical Spectroscopy by Bleuse, Joël, Ducroquet, Frédérique, Mariette, Henri

“…Reports on Cu 2 ZnSn(S x Se 1 - x ) 4 (CZTSSe) solar cell devices all show an open-circuit voltage lower than expected, especially when compared to CuIn x Ga 1…”
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Fabrication and evaluation of figures of merit of ZnO polymer-based hybrid UV photodiodes by Nagpal, Keshav, Rauwel, Erwan, Ducroquet, Frédérique, Gélard, Isabelle, Rauwel, Protima

“…This work reports on the fabrication of ZnO polymer-based hybrid ultraviolet (UV) photodiodes with a configuration of ITO/ZnO-nanorod/F8BT/PEDOT:PSS/Ag. The…”
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InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation by Chouchen, Bilel, Ducroquet, Frédérique, Nasr, Samia, Alzahrani, Abdullah Y.A., Hajjiah, Ali T., Gazzah, Mohamed Hichem

“…InxGa1-xN/GaN solar cells are ideal candidates for use in extreme temperature applications. The conversion efficiency potential of double heterostructure solar…”
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Carboxylic Acids as Oxygen Sources for the Atomic Layer Deposition of High-κ Metal Oxides by Rauwel, Erwan, Willinger, Marc-Georg, Ducroquet, Frédérique, Rauwel, Protima, Matko, Igor, Kiselev, Dmitry, Pinna, Nicola

“…A nonaqueous approach inspired from sol−gel chemistry and adapted to the deposition of metal oxide thin films by atomic layer deposition (ALD) is presented…”
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On the mobility in high- κ/metal gate MOSFETs: Evaluation of the high- κ phonon scattering impact by Weber, Olivier, Cassé, Mikael, Thevenod, Laurent, Ducroquet, Frédérique, Ernst, Thomas, Deleonibus, Simon

“…We report an experimental study of the mobility in TiN/HfO 2 gate stacks focused on the accurate determination of the HfO 2 remote soft phonon scattering…”
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Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review by Nagpal, Keshav, Rauwel, Erwan, Ducroquet, Frédérique, Rauwel, Protima

“…Light-emitting diodes (LED) are widely employed in display applications and lighting systems. Further research on LED that incorporates carbon nanostructures…”
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Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites by Rauwel, Protima, Galeckas, Augustinas, Salumaa, Martin, Ducroquet, Frédérique, Rauwel, Erwan

“…A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO2 nanoparticles (NPs) with an average diameter of 2.6…”
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Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C by Talneau, Anne, Beaudoin, Grégoire, Patriarche, Gilles, Ducroquet, Frédérique

“…For complementary metal–oxide semiconductor processing compatibility, hybrid bonding of III–V materials on silicon should be operated below 300 °C, requiring…”
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Characteristics of molybdenum bilayer back contacts for Cu(In,Ga)Se2 solar cells on Ti foils by Roger, Charles, Noël, Sébastien, Sicardy, Olivier, Faucherand, Pascal, Grenet, Louis, Karst, Nicolas, Fournier, Hélène, Roux, Frédéric, Ducroquet, Frédérique, Brioude, Arnaud, Perraud, Simon

“…Molybdenum back contact properties are critical for Cu(In,Ga)Se2 (CIGS) solar cell performance on metallic substrates. In this work, we investigated the…”
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Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As template by Alcotte, Reynald, Martin, Mickaël, Moeyaert, Jeremy, Gergaud, Patrice, David, Sylvain, Cerba, Tiphaine, Bassani, Franck, Ducroquet, Frédérique, Bogumilowicz, Yann, Baron, Thierry

“…Integration of III-V semiconductors on a Si platform is interesting for both nanoelectronic and optoelectronic devices. Among the different challenges, the…”
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Photocurrent generation in carbon nanotube/cubic-phase HfO 2 nanoparticle hybrid nanocomposites by Rauwel, Protima, Galeckas, Augustinas, Salumaa, Martin, Ducroquet, Frédérique, Rauwel, Erwan

“…A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO 2 nanoparticles (NPs) with an average diameter of 2.6…”
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Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stack by WEBER, Olivier, DAMLENCOURT, Jean-Francois, ANDRIEU, Francois, DUCROQUET, Frédérique, ERNST, Thomas, HARTMANN, Jean-Michel, PAPON, Anne-Marie, RENAULT, Olivier, GUILLAUMOT, Bernard, DELEONIBUS, Simon

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Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template by Alcotte, Reynald, Martin, Mickael, Moeyaert, Jeremy, Gergaud, Patrice, David, Sylvain, Cerba, Tiphaine, Bassani, Franck, Ducroquet, Frederique, Bogumilowicz, Yann, Baron, Thierry

“…Integration of III-V semiconductors on a Si platform is interesting for both nanoelectronic and optoelectronic devices. Among the different challenges, the…”
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On the mobility in high-k/metal gate MOSFETs : Evaluation of the high-k phonon scattering impact by WEBER, Olivier, CASSE, Mikael, THEVENOD, Laurent, DUCROQUET, Frédérique, ERNST, Thomas, DELEONIBUS, Simon

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications by Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

“…Full chemical mechanical polishing (CMP) process integration of a W /TiN damascene metal gate has been optimized and is demonstrated to be compatible with ULSI…”
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High Mobility Nano-Scaled CMOS: Some Opportunities and Challenges by Ernst, T., Andrieu, F., Weber, O., Dupre, C., Faynot, O., Ducroquet, F., Clavelier, L., Hartmann, J.-M., Barraud, S., Ghibaudo, G., Deleonibus, S.

“…The scaling of some today's high mobility MOSFETs solutions was discussed. The enhancement (between 10-25% for sub-40nm devices) is often lower than the…”
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