Search Results - "DUBBELDAY, W. B"

The growth of SiGe on sapphire using rapid thermal chemical vapor deposition by Dubbelday, W.B, Kavanagh, K.L

“…We have grown SiGe on (1 1 ̄ 0 2) sapphire using rapid thermal chemical vapor deposition at substrate temperatures ranging from 600 to 900°C. For growth at…”
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Photoluminescent thin-film porous silicon on sapphire by DUBBELDAY, W. B, SZAFLARSKI, D. M, SHIMABUKURO, R. L, RUSSELL, S. D, SAILOR, M. J

“…Results from the chemical stain etch fabrication and analysis of thin-film photoluminescent porous silicon on sapphire substrates are presented. The…”
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Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire by Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D.

“…We present the details of the fabrication, electrical characterization, and profile optimization of a SiGe pFET on silicon-on-sapphire (SOS) technology. The…”
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Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire by Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

“…We present the dc, ac, and low-frequency noise characteristics of SiGe channel pFETs on silicon-on-sapphire (SOS). The SiGe pFETs show higher mobility,…”
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Silicon-on-sapphire for RF Si systems 2000 by Lagnado, I., de la Houssaye, P.R., Dubbelday, W.B., Koester, S.J., Hammond, R., Chu, J.O., Ott, J.A., Mooney, P.M., Perraud, L., Jenkins, K.A.

“…The major issues, which confronted the formation of very thin layers of silicon (30-100 nm) on sapphire substrates for application to MM-wave communication and…”
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Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology by Mathew, S.J., Guofu Niu, Clark, S.D., Cressler, J.D., Palmer, M.J., Dubbelday, W.B.

“…We report the first results of a high-energy gamma irradiation experiment on SiGe CMOS on silicon-on-sapphire (SOS) technology. In contrast to bulk Si CMOS,…”
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Deep salicidation using nickel for suppressing the floating body effect in partially depleted SOI-MOSFET by Deng, F., Johnson, R.A., Dubbelday, W.B., Garcia, G.A., Asbeck, P.M., Lau, S.S.

“…Salicidation is a well known technique to suppress the floating body effect because the silicide near the source/body junction acts as a sink for holes. In…”
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Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire by Mathew, S.J., Niu, G., Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

“…We present the first investigation of hole confinement and its impact on low frequency noise in SiGe pFETs on sapphire. A secondary g/sub m/ peak observed at…”
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Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology by Mathew, S.J., Ansley, W.E., Dubbelday, W.B., Cressler, J.D., Ott, J., Chu, J.O., Meyerson, B.S., Kavanagh, K.L., Mooney, P.M., Lagnado, I.

“…We investigate the dc and microwave properties of a SiGe pFET on sapphire technology. The results show that both cutoff frequency (f/sub T/) and low-field…”
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