Search Results - "DROOPAD, Ravi"

Refine Results
  1. 1

    Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications by Radhakrishnan, Gokul, Kim, Kyunghoon, Droopad, Ravi, Goyal, Amit

    Published in Scientific reports (02-05-2024)
    “…Recent advances in semiconductor based electronic devices can be attributed to the technological demands of ever increasing, application specific markets…”
    Get full text
    Journal Article
  2. 2

    Enriched electron donor sites and non-overlapping small polaron tunneling electrical conduction in oxygen-deficient β-Ga2O3 thin film on p-Si (100) by Karmakar, Subrata, Shiam, Istiaq Firoz, Droopad, Ravi, Haque, Ariful

    “…Monoclinic β-Ga 2 O 3 thin films were grown on heavily doped p-type Si substrate by pulsed laser deposition (PLD) at growth temperature 700 °C and oxygen…”
    Get full text
    Journal Article
  3. 3

    Border trap reduction in Al2O3/InGaAs gate stacks by Tang, Kechao, Winter, Roy, Zhang, Liangliang, Droopad, Ravi, Eizenberg, Moshe, McIntyre, Paul C.

    Published in Applied physics letters (16-11-2015)
    “…The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and…”
    Get full text
    Journal Article
  4. 4

    Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications by Mia, Md Dalim, Samuels, Brian C., Borges, Pablo D., Scolfaro, Luisa, Siddique, Anwar, Saha, Jibesh Kanti, Talukder, Abdul Ahad, Droopad, Ravi

    “…Thin film wide bandgap Ga 2 O 3 based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and…”
    Get full text
    Journal Article
  5. 5

    The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors by Fu, Yen-Chun, Peralagu, Uthayasankaran, Millar, David A. J., Lin, Jun, Povey, Ian, Li, Xu, Monaghan, Scott, Droopad, Ravi, Hurley, Paul K., Thayne, Iain G.

    Published in Applied physics letters (03-04-2017)
    “…This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate…”
    Get full text
    Journal Article
  6. 6

    Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications by Passlack, Matthias, Droopad, Ravi, Brammertz, Guy

    Published in IEEE transactions on electron devices (01-11-2010)
    “…The suitability of oxide/GaAs interfaces for MOSFET applications has been investigated. Electrical properties of Ga 2 O 3 /GaAs interfaces, dielectric stacks…”
    Get full text
    Journal Article
  7. 7

    Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs by Qiao, Qiao, Zhang, Yuyang, Contreras-Guerrero, Rocio, Droopad, Ravi, Pantelides, Sokrates T., Pennycook, Stephen J., Ogut, Serdar, Klie, Robert F.

    Published in Applied physics letters (16-11-2015)
    “…The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if…”
    Get full text
    Journal Article
  8. 8

    Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time by Growden, Tyler A., Brown, E. R., Zhang, Weidong, Droopad, Ravi, Berger, Paul R.

    Published in Applied physics letters (12-10-2015)
    “…An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time…”
    Get full text
    Journal Article
  9. 9

    Electrical and physical characterization of the Al2O3/ p -GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments by Peralagu, Uthayasankaran, Povey, Ian M., Carolan, Patrick, Lin, Jun, Contreras-Guerrero, Rocio, Droopad, Ravi, Hurley, Paul K., Thayne, Iain G.

    Published in Applied physics letters (20-10-2014)
    “…In this work, the impact of ammonium sulfide ((NH4)2S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying…”
    Get full text
    Journal Article
  10. 10

    Demonstration of ferroelectricity in PLD grown HfO2-ZrO2 nanolaminates by Sree Sourav Das, Zach Fox, Md Dalim Mia, Brian C Samuels, Rony Saha, Ravi Droopad

    Published in AIMS materials science (01-01-2023)
    “…Ferroelectricity is demonstrated for the first time in Si(100)/SiO2/TiN/HfO2-ZrO2/TiN stack using pulsed laser deposition (PLD) and the effects of…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes by Cortes-Mestizo, Irving, Méndez-García, Victor H., Briones, Joel, Perez-Caro, Manuel, Droopad, Ravi, McMurtry, Stefan, Hehn, Michel, Montaigne, François, Briones, Edgar

    Published in AIP advances (01-11-2015)
    “…In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices…”
    Get full text
    Journal Article
  13. 13
  14. 14

    Highly Stable Electrochemical Supercapacitor Performance of Self-Assembled Ferromagnetic Q‑Carbon by Karmakar, Subrata, Taqy, Saif, Droopad, Ravi, Trivedi, Ravi Kumar, Chakraborty, Brahmananda, Haque, Ariful

    Published in ACS applied materials & interfaces (15-02-2023)
    “…Novel phase Q-carbon thin films exhibit some intriguing features and have been explored for various potential applications. Herein, we report the growth of…”
    Get full text
    Journal Article
  15. 15

    Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations by Taqy, Saif, Sarkar, Pallab, Hamid, Md Abdul, Pranto, Tarik, Piner, Edwin L., Droopad, Ravi, Haque, Ariful

    Published in Carbon (New York) (10-02-2024)
    “…Q-carbon, a quenched form of carbon, is a recently discovered carbon structure that has tremendous properties, compatibility, and potential for use in device…”
    Get full text
    Journal Article
  16. 16

    Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates by Petraru, Adrian, Droopad, Ravi, Kohlstedt, Hermann

    “…Oxide multilayer heteroepitaxy combining Mott-insulator vanadium dioxide (VO2) films and functional conducting/ferroelectric/dielectric films opens new…”
    Get full text
    Journal Article
  17. 17

    Aerosol assisted-chemical vapour deposition of tetrahedrite copper antimony sulphide thin films: the effect of zinc(II) impurities on optical properties by Weston, Kimberly, Taylor, Richard A., Samuels, Brian C., Taqy, Saif, Droopad, Ravi

    Published in Thin solid films (30-05-2024)
    “…•Aerosol-assisted deposition yields thin films with controlled composition and structures.•Cu-Sb-S(CAS) thin films show visible optical absorption influenced…”
    Get full text
    Journal Article
  18. 18

    Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β‑Ga2O3 (−201) Single Crystal by Karmakar, Subrata, Shiam, Istiaq Firoz, Manikanthababu, Nethala, Emu, Injamamul Hoque, Droopad, Ravi, Haque, Ariful

    Published in ACS applied materials & interfaces (11-09-2024)
    “…Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga2O3 (−201) single crystal were investigated by frequency-domain impedance…”
    Get full text
    Journal Article
  19. 19

    Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga 2 O 3 (-201) Single Crystal by Karmakar, Subrata, Shiam, Istiaq Firoz, Manikanthababu, Nethala, Emu, Injamamul Hoque, Droopad, Ravi, Haque, Ariful

    Published in ACS applied materials & interfaces (11-09-2024)
    “…Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga O (-201) single crystal were investigated by frequency-domain impedance…”
    Get full text
    Journal Article
  20. 20

    Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO 2 Ferroelectric Films by Petraru, Adrian, Gronenberg, Ole, Schürmann, Ulrich, Kienle, Lorenz, Droopad, Ravi, Kohlstedt, Hermann

    Published in ACS applied materials & interfaces (14-08-2024)
    “…Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible…”
    Get full text
    Journal Article