Search Results - "DROOPAD, Ravi"
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Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications
Published in Scientific reports (02-05-2024)“…Recent advances in semiconductor based electronic devices can be attributed to the technological demands of ever increasing, application specific markets…”
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Enriched electron donor sites and non-overlapping small polaron tunneling electrical conduction in oxygen-deficient β-Ga2O3 thin film on p-Si (100)
Published in Applied physics. A, Materials science & processing (01-07-2024)“…Monoclinic β-Ga 2 O 3 thin films were grown on heavily doped p-type Si substrate by pulsed laser deposition (PLD) at growth temperature 700 °C and oxygen…”
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Border trap reduction in Al2O3/InGaAs gate stacks
Published in Applied physics letters (16-11-2015)“…The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and…”
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Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications
Published in Applied physics. A, Materials science & processing (01-05-2022)“…Thin film wide bandgap Ga 2 O 3 based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and…”
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The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors
Published in Applied physics letters (03-04-2017)“…This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate…”
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Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications
Published in IEEE transactions on electron devices (01-11-2010)“…The suitability of oxide/GaAs interfaces for MOSFET applications has been investigated. Electrical properties of Ga 2 O 3 /GaAs interfaces, dielectric stacks…”
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Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs
Published in Applied physics letters (16-11-2015)“…The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if…”
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Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time
Published in Applied physics letters (12-10-2015)“…An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time…”
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Electrical and physical characterization of the Al2O3/ p -GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments
Published in Applied physics letters (20-10-2014)“…In this work, the impact of ammonium sulfide ((NH4)2S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying…”
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Demonstration of ferroelectricity in PLD grown HfO2-ZrO2 nanolaminates
Published in AIMS materials science (01-01-2023)“…Ferroelectricity is demonstrated for the first time in Si(100)/SiO2/TiN/HfO2-ZrO2/TiN stack using pulsed laser deposition (PLD) and the effects of…”
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Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing
Published in Advances in materials science and engineering (01-01-2018)“…β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source…”
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12
Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes
Published in AIP advances (01-11-2015)“…In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices…”
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Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(0 0 1)
Published in Microelectronic engineering (01-04-2011)Get full text
Conference Proceeding Journal Article -
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Highly Stable Electrochemical Supercapacitor Performance of Self-Assembled Ferromagnetic Q‑Carbon
Published in ACS applied materials & interfaces (15-02-2023)“…Novel phase Q-carbon thin films exhibit some intriguing features and have been explored for various potential applications. Herein, we report the growth of…”
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Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations
Published in Carbon (New York) (10-02-2024)“…Q-carbon, a quenched form of carbon, is a recently discovered carbon structure that has tremendous properties, compatibility, and potential for use in device…”
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Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-2019)“…Oxide multilayer heteroepitaxy combining Mott-insulator vanadium dioxide (VO2) films and functional conducting/ferroelectric/dielectric films opens new…”
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Aerosol assisted-chemical vapour deposition of tetrahedrite copper antimony sulphide thin films: the effect of zinc(II) impurities on optical properties
Published in Thin solid films (30-05-2024)“…•Aerosol-assisted deposition yields thin films with controlled composition and structures.•Cu-Sb-S(CAS) thin films show visible optical absorption influenced…”
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Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β‑Ga2O3 (−201) Single Crystal
Published in ACS applied materials & interfaces (11-09-2024)“…Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga2O3 (−201) single crystal were investigated by frequency-domain impedance…”
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Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga 2 O 3 (-201) Single Crystal
Published in ACS applied materials & interfaces (11-09-2024)“…Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga O (-201) single crystal were investigated by frequency-domain impedance…”
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Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO 2 Ferroelectric Films
Published in ACS applied materials & interfaces (14-08-2024)“…Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible…”
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