Search Results - "DRAPER, B. L"

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance by King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.

“…Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs…”
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Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications by Dodd, P.E., Shaneyfelt, M.R., Draper, B.L., Young, R.W., Savignon, D., Witcher, J.B., Vizkelethy, G., Schwanki, J.R., Shen, Z.J., Shea, P., Landowski, M., Dalton, S.M.

“…The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Results indicate that lateral power MOSFETs can…”
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Challenges in hardening technologies using shallow-trench isolation by Shaneyfelt, M.R., Dodd, P.E., Draper, B.L., Flores, R.S.

“…Challenges related to radiation hardening CMOS technologies with shallow-trench isolation are explored. It is shown that developing a radiation-hardened CMOS…”
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Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties by Schwank, J.R, Fleetwood, D.M, Xiong, H.D, Shaneyfelt, M.R, Draper, B.L

“…Implanting the buried oxide of silicon-on-insulator technologies can create electron traps throughout the buried oxide that can compensate the buildup of…”
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Charge collection in SOI capacitors and circuits and its effect on SEU hardness by Schwank, J.R., Dodd, P.E., Shaneyfelt, M.R., Vizkelethy, G., Draper, B.L., Hill, T.A., Walsh, D.S., Hash, G.L., Doyle, B.L., McDaniel, F.D.

“…Focused ion microbeam and broadbeam heavy-ion experiments on capacitors and SRAMs are used to investigate increased saturation upset cross sections recently…”
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Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides by Schwank, J.R., Shaneyfelt, M.R., Dodd, P.E., Ferlet-Cavrois, V., Loemker, R.A., Winokur, P.S., Fleetwood, D.M., Paillet, P., Leray, J.-L., Draper, B.L., Witczak, S.C., Riewe, L.C.

“…Large differences in charge buildup in SOI buried oxides are observed for X-ray and Co-60 irradiations of SIMOX and Unibond transistors. The Co-60 response is…”
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Optimum laboratory radiation source for hardness assurance testing by Schwank, J.R., Shaneyfelt, M.R., Paillet, P., Beutler, D.E., Ferlet-Cavrois, V., Draper, B.L., Loemaker, R.A., Dodd, P.E., Sexton, F.W.

“…Silicon-on-insulator (SOI) and bulk-silicon transistors were irradiated using X-ray, Co-60 gamma, and proton radiation sources. Co-60 gamma irradiation…”
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Single-event upset and snapback in silicon-on-insulator devices and integrated circuits by Dodd, P.E., Shaneyfelt, M.R., Walsh, D.S., Schwank, J.R., Hash, G.L., Loemker, R.A., Draper, B.L., Winokur, P.S.

“…The characteristics of ion-induced charge collection and single-event upset are studied in silicon-on-insulator (SOI) transistors and circuits with various…”
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SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments by Dodd, P.E., Shaneyfelt, A.R., Horn, K.M., Walsh, D.S., Hash, G.L., Hill, T.A., Draper, B.L., Schwank, J.R., Sexton, F.W., Winokur, P.S.

“…Large-scale three-dimensional (3D) device simulations, focused ion microscopy, and broadbeam heavy-ion experiments are used to determine and compare the…”
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Silicon-on-insulator non-volatile field-effect transistor memory by Schwank, J.R., Shaneyfelt, M.R., Meisenheimer, T.L., Draper, B.L., Vanhesden, K., Fleetwood, D.M.

“…Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate…”
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Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner by Woodruff, T K, Besecke, L M, Groome, N, Draper, L B, Schwartz, N B, Weiss, J

“…Inhibin A and inhibin B are related dimeric protein hormones and endocrine regulators of the reproductive axis. Specifically, inhibin inhibits FSH secretion…”
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Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films by Vanheusden, K., Warren, W. L., Fleetwood, D. M., Schwank, J. R., Shaneyfelt, M. R., Draper, B. L., Winokur, P. S., Devine, R. A. B., Archer, L. B., Brown, G. A., Wallace, R. M.

“…The chemical kinetics of mobile-proton reactions in the SiO2 film of Si/SiO2/Si structures were analyzed as a function of forming-gas anneal parameters in the…”
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Identification of Naturally Occurring Follistatin Complexes in Human Biological Fluids by WANG, E. Y, DRAPER, L. B, LEE, E, POLAK, A, SLUSS, P, WEISS, J, WOODRUFF, T. K

“…Follistatin (FS) binds activin and inhibin proteins. Many organs are sensitive to activin and inhibin; thus the formation of FS-activin/inhibin complexes is…”
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A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films by VANHEUSDEN, K, WARREN, W. L, DEVINE, R. A. B, FLEETWOOD, D. M, DRAPER, B. L, SCHWANK, J. R

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Inhibin A and inhibin B are inversely correlated to follicle-stimulating hormone, yet are discordant during the follicular phase of the rat estrous cycle, and inhibin A is expressed in a sexually dimorphic manner by Woodruff, T K, Besecke, L M, Groome, N, Draper, L B, Schwartz, N B, Weiss, J

“…Inhibin A and inhibin B are related dimeric protein hormones and endocrine regulators of the reproductive axis. Specifically, inhibin inhibits FSH secretion…”
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Structure and expression of a membrane component of the inhibin receptor system by Chong, H, Pangas, S A, Bernard, D J, Wang, E, Gitch, J, Chen, W, Draper, L B, Cox, E T, Woodruff, T K

“…The purification and cloning of a membrane-anchored proteoglycan with affinity for inhibin A are described. Bovine pituitary membranes were isolated, and…”
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Radiation-induced off-state leakage current in commercial power MOSFETs by Felix, J.A., Shaneyfelt, M.R., Dodd, P.E., Draper, B.L., Schwank, J.R., Dalton, S.M.

“…The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO/sub 2/) most of the n- and p-channel devices…”
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BUSFET-a radiation-hardened SOI transistor by Schwank, J.R., Shaneyfelt, M.R., Draper, B.L., Dodd, P.E.

“…The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried…”
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An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact by ZOLPER, J. C, BACA, A. G, HIETALA, V. M, SHUL, R. J, HOWARD, A. J, RIEGER, D. J, SHERWIN, M. E, LOVEJOY, M. L, HJALMARSON, H. P, DRAPER, B. L, KLEM, J. F

“…The authors describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping…”
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Identification of an Inhibin Receptor in Gonadal Tumors from Inhibin α-Subunit Knockout Mice by Draper, Lawrence B., Matzuk, Martin M., Roberts, Veronica J., Cox, Edward, Weiss, Jeffrey, Mather, Jennie P., Woodruff, Teresa K.

“…Inhibins and activins are dimeric proteins that are functional antagonists and are structurally related to the transforming growth factor-β (TGFβ) family of…”
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