Search Results - "DOSHO, C"

Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam by Uedono, Akira, Wei, Long, Dosho, Chisei, Kondo, Hitoshi, Tamura, Shoichiro Tanigawa

“…Vacancy-type defects in 2-MeV B + -, 2-MeV P + - and 3-MeV As + -ion implanted Si(100) were studied by a monoenergetic positron beam. The depth distributions…”
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Defect production in phosphorus ion-implanted SiO1(43 nm)/Si studied by a variable-energy positron beam by UEDONO, A, LONG WEI, DOSHO, C, KONDO, H, TANIGAWA, S, SUGIURA, J, OGASAWARA, M

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Defects introduced by Me-V-energy ion implantation into Si probed by a monoenergetic positron beam by UEDONO, A, WEI, L, DOSHO, C, KONDO, H, TANIGAWA, S, TAMURA, M

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Defects in metalorganic chemical vapor deposition epitaxy-grown ZnSe films on GaAs investigated by monoenergetic positrons by WEI, L, CHO, Y.-K, DOSHO, C, TANIGAWA, S, YODO, T, YAMASHITA, K

“…Defects in metalorganic chemical vapor deposition epitaxy (MOVPE)-grown ZnSe heteroepilayers on GaAs were investigated by monoenergetic positrons. The present…”
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Variable-energy positron studies of vacancy-type defects in TiN films on Si by WEI, L, DOSHO, C, YANG-KOO CHO, TANIGAWA, S, HINODE, K

“…A variable-energy (0–30 keV) positron beam has been used as a nondestructive probe for titanium nitride (TiN) films with a thickness of 800 nm deposited on Si…”
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The defect characterization of heavily Si-doped molecular beam epitaxy-grown GaAs by the monoenergetic positron method by LONG WEI, YANG-KOO CHO, CHISEI DOSHO, KURIHARA, T, TANIGAWA, S

“…Monoenergetic (100 eV-30 keV) positrons were used as a defect probe for heavily Si-doped GaAs with a thickness of 300nm grown by molecular beam epitaxy (MBE)…”
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