Search Results - "DIJKKAMP, D"

Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material by DIJKKAMP, D, VENKATESAN, T, WU, X. D, SHAHEEN, S. A, JISRAWI, N, MIN-LEE, Y. H, MCLEAN, W. L, CROFT, M

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Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxy by Hoeven, AJ, Lenssinck, JM, Dijkkamp, D, van Loenen EJ, Dieleman, J

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Epitaxial ordering of oxide superconductor thin films on (100) SrTiO3 prepared by pulsed laser evaporation by WU, X. D, DIJKKAMP, D, OGALE, S. B, INAM, A, CHASE, E. W, MICELI, P. F, CHANG, C. C, TARASCON, J. M, VENKATESAN, T

“…Thin films of Y-Ba-Cu-O superconductors on (100) SrTiO3 were prepared using the pulsed excimer laser evaporation technique. After an annealing treatment in…”
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Pulsed laser etching of high Tc superconducting films by ARUN INAM, WU, X. D, VENKATESAN, T, OGALE, S. B, CHANG, C. C, DIJKKAMP, D

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Direct writing in Si with a scanning tunneling microscope by van Loenen, E. J., Dijkkamp, D., Hoeven, A. J., Lenssinck, J. M., Dieleman, J.

“…Using the W tip of a scanning tunneling microscope, indentations with diameters of 2–10 nm have been made directly in Si (110) and Si (001) surfaces. It is…”
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Scanning tunneling microscopy study of Si (001) and Si (110) surface structures resulting from different thermal cleaning treatments by Dijkkamp, D., van Loenen, E. J., Hoeven, A. J., Dieleman, J.

“…We have studied the morphology and distribution of atomic steps on Si (001) and Si (110) with scanning tunneling microscopy. We find that native oxide removal…”
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Island and step structures on molecular beam epitaxy grown Si(001) surfaces by Hoeven, A. J., Dijkkamp, D., van Loenen, E. J., Lenssinck, J. M., Dieleman, J.

“…Initial stages of Si molecular beam epitaxy (MBE) on Si(001) substrates, misoriented 0.5° towards [110], were investigated using scanning tunneling microscopy…”
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Evidence for the thermal nature of laser-induced polymer ablation by DIJKKAMP, D, GOZDZ, A. S, VENKATESAN, T, WU, X. D

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Morphology and distribution of atomic steps on Si(001) studied with scanning tunneling microscopy by DIJKKAMP, D, HOEVEN, A. J, VAN LOENEN, E. J, LENSSINCK, J. M, DIELEMAN, J

“…We have studied the morphology and distribution of atomic steps on Si(001) with scanning tunneling microscopy. We find that native oxide removal at…”
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Optical second‐harmonic generation study of barium deposition on Si(001) by Hollering, R. W. J., Dijkkamp, D., Lindelauf, H. W. L., van der Heide, P. A. M., Krijn, M. P. C. M.

“…Experimental results are presented on the deposition of barium on clean Si(001) studied by optical second‐harmonic generation and work function measurements…”
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Evidence for tip imaging in scanning tunneling microscopy by VAN LOENEN, E. J, DIJKKAMP, D, HOEVEN, A. J, LENSSINCK, J. M, DIELEMAN, J

“…It is demonstrated that scanning tunneling microscopy (STM) images often contain three-dimensional ghost images of the tunneling tip. These ghost images…”
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Nanometer scale structuring of silicon by direct indentation by van Loenen, E. J., Dijkkamp, D., Hoeven, A. J., Lenssinck, J. M., Dieleman, J.

“…Shallow indentations with diameters of 2–10 nm have been made directly in clean Si(110) and Si(001) surfaces using the W tip of a scanning tunneling…”
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Total capture and line-emission cross sections for C6+-, N7+-, O8+-H collisions in the energy range 3-7.5 keV/u by DIJKKAMP, D, CIRIC, D, DE HEER, F. J

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Electron Capture into Different ( n ,   l ) States in Slow Collisions of C 6 + , N 6 + , O 6 + , and Ne 6 + Projectiles on He and H 2 Targets by Gordeev, Yu. S., Dijkkamp, D., Drentje, A. G., de Heer, F. J.

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High-voltage research and development at Philips Display Components by Joosse, K., Aarnink, W.A.M., Dijkkamp, D., Crombeen, J.E., Niessen, E.M.J.

“…Robust high-voltage product designs and manufacturing processes are of vital importance in cathode ray tube production. Ever increasing demands on performance…”
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Electron capture into different (n,l) states in slow collisions of C6+, N6+, O6+, and Ne6+ projectiles on He and H2 targets by GORDEEV, Y. S, DIJKKAMP, D, DRENTJE, A. G, DE HEER, F. J

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Scanning tunneling microscopy study of initial stages of silicon molecular beam epitaxy by Hoeven, A. J., Dijkkamp, D., Lenssinck, J. M., van Loenen, E. J.

“…Initial stages of Si molecular beam epitaxy on vicinal Si(001) substrates were investigated using scanning tunneling microscopy. It was found that at…”
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Geometric and electronic structure of Sb on Si(111) by scanning tunneling microscopy by ELSWIJK, H. B, DIJKKAMP, D, VAN LOENEN, E. J

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Equilibrium structure of monatomic steps on vicinal Si(001) by Zandvliet, HJ, Elswijk, HB, van Loenen EJ, Dijkkamp, D

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A model for Si molecular‐beam epitaxy based on scanning tunneling microscopy observations and computer simulations by Elswijk, H. B., Hoeven, A. J., van Loenen, E. J., Dijkkamp, D.

“…Scanning tunneling microscopy observations of homoepitaxial growth on vicinal Si(001) and of coarsening of Si islands are used to develop a model of growth…”
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