Search Results - "DI, Z. F"

A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst by Wang, S. M., Gong, Q., Li, Y. Y., Cao, C. F., Zhou, H. F., Yan, J. Y., Liu, Q. B., Zhang, L. Y., Ding, G. Q., Di, Z. F., Xie, X. M.

“…We propose a novel semiconductor compatible path for nano-graphene synthesis using precursors containing C-Br bonding and liquid catalyst. The unique…”
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The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature by Xie, Xiaoming, Hu, T., Di, Z. F., Sun, Y. B.

“…We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from…”
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Study of Ge loss during Ge condensation process by Xue, Z.Y., Di, Z.F., Ye, L., Mu, Z.Q., Chen, D., Wei, X., Zhang, M., Wang, X.

“…Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford…”
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Order and temperature dependence of surface blistering in H and He co-implanted Ge by Dai, J.Y., Wei, X., Xue, Z.Y., Di, Z.F., Zhang, M.

“…The effect of implantation order and post-annealing temperature on surface blistering of H and He co-implanted germanium was investigated in the samples…”
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Helium bubble precipitation at dislocation networks by Hetherly, J., Martinez, E., Di, Z.F., Nastasi, M., Caro, A.

“…We report on a study of nanoscale He bubble precipitation and growth at a twist grain boundary in two face-centered cubic materials. Experimentally, the twist…”
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Influence of He implantation dose on strain relaxation of pseudomorphic SiGe/Si heterostructure by Liu, L.J., Xue, Z.Y., Chen, D., Mu, Z.Q., Bian, J.T., Jiang, H.T., Wei, X., Di, Z.F., Zhang, M., Wang, X.

“…The influence of He implantation dose on the strain relaxation of 180nm Si0.75Ge0.25/Si layers epitaxially grown on silicon is investigated. It is found that…”
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Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation by HUANG, A. P, DI, Z. F, FU, Ricky K. Y, CHU, Paul K

“…We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic…”
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Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon by Di, Z. F., Huang, M. Q., Wang, Y. Q., Nastasi, M.

“…The influence of dynamic and thermal annealing on hydrogen platelet formation in silicon have been studied. For cryogenic and room temperature implantations,…”
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Effect of temperature on layer separation by plasma hydrogenation by Di, Z. F., Wang, Y. Q., Nastasi, M., Rossi, F., Shao, L., Thompson, P. E.

“…We have studied hydrogen diffusion in plasma hydrogenated Si ∕ Si Ge ∕ Si heterostructure at different temperatures. At low temperature, intrinsic point…”
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Microstructure and visible-photoluminescence of titanium dioxide thin films fabricated by dual cathodic arc and nitrogen plasma deposition by Huang, A.P., Di, Z.F., Chu, Paul K.

“…We report the concurrent use of plasma nitridation with cathodic arc deposition to fabricate N-doped TiO 2 thin films on Si (100) wafers. The microstructures…”
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Aging control of organic thin film transistors via ion-implantation by Fraboni, B., Cosseddu, P., Wang, Y.Q., Schulze, R.K., Di, Z.F., Cavallini, A., Nastasi, M., Bonfiglio, A.

“…[Display omitted] ► Organic thin film devices exposed to atmosphere suffer severe degradation effects. ► Controlled ion implantation induces strong…”
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Fabrication and biochemical sensing applications of controllable germanium nanowires array by Cai, Q., Ye, L., Xu, B. J., Di, Z. F., Jin, Q. H., Zhao, J. L.

“…As a typical semiconductor material, germanium has attracted significant interest as a good candidate to replace silicon for future-generation…”
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Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon by Di, Z. F., Wang, Y. Q., Nastasi, M., Shao, L., Lee, J. K., Theodore, N. D.

“…We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to…”
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Origin of reverse annealing effect in hydrogen-implanted silicon by Di, Z. F., Wang, Y. Q., Nastasi, M., Theodore, N. David

“…In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose…”
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Dynamic annealing versus thermal annealing effects on the formationof hydrogen-induced defects in silicon by Di, Z. F., Huang, M. Q., Wang, Y. Q., Nastasi, M.

“…The influence of dynamic and thermal annealing on hydrogen platelet formation in silicon have been studied. For cryogenic and room temperature implantations,…”
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Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation by Di, Z. F., Wang, Y. Q., Nastasi, M., Bisognin, G., Berti, M., Thompson, P. E.

“…We have studied the mechanisms underlying strained layer relaxation by means of point defect interaction. During high temperature ( 300 ° C ) proton…”
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Evidence for ion irradiation induced dissociation and reconstructionof Si-H bonds in hydrogen-implanted silicon by Di, Z. F., Wang, Y. Q., Nastasi, M., Shao, L., Lee, J. K., Theodore, N. D.

“…We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to…”
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Tunable helium bubble superlattice ordered by screw dislocation network by Di, Zengfeng, Bai, Xian-Ming, Wei, Qiangmin, Won, Jonghan, Hoagland, Richard G., Wang, Yongqiang, Misra, Amit, Uberuaga, Blas P., Nastasi, Michael

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Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects by Di, Zengfeng, Chu, Paul K., Zhu, Ming, Fu, Ricky K. Y., Luo, Suhua, Shao, Lin, Nastasi, M., Chen, Peng, Alford, T. L., Mayer, J. W., Zhang, Miao, Liu, Weili, Song, Zhitang, Lin, Chenglu

“…A diamondlike-carbon (DLC) layer was used to substitute for the buried SiO2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our…”
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Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure by Di, Zengfeng, Zhang, Miao, Liu, Weili, Zhu, Ming, Lin, Chenglu, Chu, Paul K.

“…An improved technique is demonstrated to fabricate silicon–germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation of…”
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