Search Results - "DERLUYN, Joff"

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs by Zhou, Yan, Ramaneti, Rajesh, Anaya, Julian, Korneychuk, Svetlana, Derluyn, Joff, Sun, Huarui, Pomeroy, James, Verbeeck, Johan, Haenen, Ken, Kuball, Martin

“…Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film…”
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Growth of magnesium nitride thin films on various surfaces via atomic-nitrogen-assisted molecular beam epitaxy at moderate substrate temperatures by Schouteden, Koen, Ceccon, Luca, Recaman Payo, Maria, Sun, Yue, Hsu, Wei-Fan, Rangasamy, Vijay Shankar, Derluyn, Joff, Menghini, Mariela, Seo, Jin Won, Locquet, Jean-Pierre

“…We report on the growth of Mg 3 N 2 thin films via atomic-nitrogen-assisted molecular beam epitaxy (MBE) on various surfaces, i.e ., silicon, sapphire, and…”
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors by Abid, Idriss, Hamdaoui, Youssef, Mehta, Jash, Derluyn, Joff, Medjdoub, Farid

“…We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally…”
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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications by Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage…”
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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
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High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications by Fleury, Clément, Capriotti, Mattia, Rigato, Matteo, Hilt, Oliver, Würfl, Joachim, Derluyn, Joff, Steinhauer, Stephan, Köck, Anton, Strasser, Gottfried, Pogany, Dionyz

“…We analyse high temperature effects (up to 420°C) in the performances of p-GaN gate normally-off AlGaN/GaN HEMTs on Si and SiC substrates for power…”
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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a novel approach to enhance the breakdown voltage ( V BD ) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by…”
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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment by Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN…”
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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures by Wang, Wenfei, Derluyn, Joff, Germain, Marianne, Leys, Maarten, Degroote, Stefan, Schreurs, Dominique, Borghs, Gustaaf

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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors by Besendörfer, Sven, Meissner, Elke, Medjdoub, Farid, Derluyn, Joff, Friedrich, Jochen, Erlbacher, Tobias

“…GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force…”
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Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics by Knetzger, Michael, Meissner, Elke, Derluyn, Joff, Germain, Marianne, Friedrich, Jochen

“…In this work gallium nitride (GaN) grown on silicon substrates was investigated in order to determine critical defects responsible for differences in the…”
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Exploring possibilities of band gap measurement with off-axis EELS in TEM by Korneychuk, Svetlana, Partoens, Bart, Guzzinati, Giulio, Ramaneti, Rajesh, Derluyn, Joff, Haenen, Ken, Verbeeck, Jo

“…•A technique to measure band gap by means of off-axis EELS with Bessel aperture is discussed.•Efficiency of the proposed method is demonstrated even at high…”
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A micro-electro-mechanical accelerometer based on gallium nitride on silicon by Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

“…We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a…”
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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
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Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Idriss Abid, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
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Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment by Borga, M., Meneghini, M., Benazzi, D., Canato, E., Püsche, R., Derluyn, J., Abid, I., Medjdoub, F., Meneghesso, G., Zanoni, E.

“…The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first…”
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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance by Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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Gallium nitride MEMS resonators: how residual stress impacts design and performances by Morelle, Christophe, Théron, Didier, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Zhang, Victor, Buchaillot, Lionel, Grimbert, Bertrand, Tilmant, Pascal, Vaurette, François, Roch-Jeune, Isabelle, Brandli, Virginie, Avramovic, Vanessa, Okada, Etienne, Faucher, Marc

“…Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed,…”
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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity by Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf

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