Search Results - "DEMEYER, K"

Analysis of the parasitic S/D resistance in multiple-gate FETs by Dixit, A., Kottantharayil, A., Collaert, N., Goodwin, M., Jurczak, M., De Meyer, K.

“…The multiple-gate field-effect transistor (FET) is a promising device architecture for the 45-nm CMOS technology node. These nonplanar devices suffer from a…”
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Influence of the ion-composition of the medium on alkaloid production by “hairy roots” ofDatura stramonium by Sikuli, N. N., Demeyer, K.

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Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures by Marchand, B., Cretu, B., Ghibaudo, G., Balestra, F., Blachier, D., Leroux, C., Deleonibus, S., Guégan, G., Reimbold, G., Kubicek, S., DeMeyer, K.

“…A comprehensive analytical model of the secondary impact ionization (2II)-induced gate current is developed based on the lucky electron concept. This model…”
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Nitrogen and alkaloid accumulation and partitioning in Datura stramonium L by Demeyer, K. (Vrije Universiteit Brussel, St Genesius-Rode, Belgium.), Dejaegere, R

“…The influence of the nitrogen dose on alkaloid yield in Datura stramonium L. was determined by using a mineral nutrient regime where mineral dose, pH, and…”
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Effect of the nitrogen form used in the growth medium ( $NO_3^ - $ , $NH_4^ + $ ) on alkaloid production in Datura stramonium L by DEMEYER, K., DEJAEGERE, R.

“…Plants of Datura stramonium var. tatula L. Torr, were cultivated on vermiculite and received two different mineral solutions. In one treatment only $NO_3^ -…”
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Fluorescence of the diastereoisomers of 2,4-di(N-carbazolyl)pentane and the two excimers observed in poly(N-vinylcarbazole) by De Schryver, F. C, Vandendriessche, J, Toppet, S, Demeyer, K, Boens, N

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Influence of the ion-composition of the medium on alkaloid production by 'hairy roots' of Datura stramonium by Sikuli, N.N. (Vrije Univ. Brussel, St. Genesius-Rode (Belgium). Dept. Plant Physiology), Demeyer, K

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Influence of the ion-balance in the growth medium on the yield and alkaloid content of Datura stramonium L by DEMEYER, K., DEJAEGERE, R.

“…Plants of Datura stramonium var. tatula L. Torr, were grown for 24 weeks on vermiculite and provided with mineral solutions where the relative proportions of…”
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Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI by Mitard, J., Shea, C., DeJaeger, B., Pristera, A., Wang, G., Houssa, M., Eneman, G., Hellings, G., Wang, W.E., Lin, J.C., Leys, F.E., Loo, R., Winderickx, G., Vrancken, E., Stesmans, A., DeMeyer, K., Caymax, M., Pantisano, L., Meuris, M., Heyns, M.

“…For the first time, an STI module is integrated in an advanced 70 nm Ge-pFET technology allowing EOT scaling down to 0.85 nm. Gate leakage is kept below…”
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Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions by ALIAN, A, BRAMMERTZ, G, HEYNS, M, WALDRON, N, MERCKLING, C, HELLINGS, G, LIN, H. C, WANG, W. E, MEURIS, M, SIMOEN, E, DEMEYER, K

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Intramolecular photocyclomerization and excimer emission of 1,1'-di(1-naphthyl)diethyl ethers: model systems of poly(1-vinylnaphthalene) by De Schryver, F. C, Demeyer, K, Toppet, S

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A functional 41-stage ring oscillator using scaled FinFET devices with 25-nm gate lengths and 10-nm fin widths applicable for the 45-nm CMOS node by Collaert, N., Dixit, A., Goodwin, M., Anil, K.G., Rooyackers, R., Degroote, B., Leunissen, L.H.A., Veloso, A., Jonckheere, R., De Meyer, K., Jurczak, M., Biesemans, S.

“…We have fabricated a functional FinFET ring oscillator with a physical gate length of 25 nm and a fin width of 10 nm, the smallest ever reported. We…”
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Electrically-alterable memory using a dual electron injector structure by DiMaria, D.J., DeMeyer, K.M., Dong, D.W.

“…A novel type of electrically-alterable memory which uses the phenomenon of enhanced electron injection into SiO 2 from Si-rich SiO 2 to charge or discharge a…”
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Impact of Epi-Si growth temperature on Ge-pFET performance by Mitard, J., Martens, K., DeJaeger, B., Franco, J., Shea, C., Plourde, C., Leys, F.E., Loo, R., Hellings, G., Eneman, G., Wei-E Wang, Lin, J.C., Kaczer, B., DeMeyer, K., Hoffmann, T., DeGendt, S., Caymax, M., Meuris, M., Heyns, M.M.

“…In this study, we report a direct comparison between two epitaxial silicon processes: 500degC using SiH 4 and 350degC using Si 3 H 8 . Following four different…”
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N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices by Petry, J., Boccardi, G., Xiong, K., Muller, M., Hooker, J., Singanamalla, R., Collaert, N., DeMeyer, K.

“…In the framework of fully depleted devices, we report up to 150 mV V T tuning towards the Si conduction band by implantation of Te into molybdenum capped with…”
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Effect of the nitrogen form used in the growth medium (NO(3)(-), NH(4)(+)) on alkaloid production in Datura stramonium L by Demeyer K, Dejaegere R

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Influence of the ion-composition of the medium on alkaloid production by hairy roots of Datura stramonium by SIKULI, N. N, DEMEYER, K

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Dual-electron-injector-structure electrically alterable read-only-memory modeling studies by DiMaria, D.J., DeMeyer, K.M., Dong, D.W.

“…The threshold voltage shift of various dual-electron-injector structures (DEIS's) which are composed of chemically vapor-deposited (CVD) stacks of Si-rich SiO…”
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Influence of the ion-balance in the growth medium on the yield and alkaloid content ofDatura stramonium L by Demeyer, K., Dejaegere, R.

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Proposal for a new process flow for the fabrication of silicon-based complementary MOD-MOSFETs without ion implantation by Augusto, Carlos J.R.P., De Meyer, Kristin

“…A new process flow is proposed (C.J.R.P. Augusto, U.S. Provisional Patent Appl. No. 60/008703, 1995) for the fabrication of silicon-based MOD-MOSFETs, with or…”
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