Search Results - "DEKKERS, H. F. W"

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge by Agostinelli, G., Delabie, A., Vitanov, P., Alexieva, Z., Dekkers, H.F.W., De Wolf, S., Beaucarne, G.

“…Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2O 3 layers on p-type CZ silicon wafers…”
Get full text

Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells by Bertoni, M.I., Hudelson, S., Newman, B.K., Fenning, D.P., Dekkers, H.F.W., Cornagliotti, E., Zuschlag, A., Micard, G., Hahn, G., Coletti, G., Lai, B., Buonassisi, T.

“…We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We…”
Get full text

Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating by Verlaan, V., van der Werf, C. H. M., Houweling, Z. S., Romijn, I. G., Weeber, A. W., Dekkers, H. F. W., Goldbach, H. D., Schropp, R. E. I.

“…Hot‐wire chemical vapor deposition (HWCVD) is a promising technique for very fast deposition of high quality thin films. We developed processing conditions for…”
Get full text

Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers by Dekkers, H. F. W., Carnel, L., Beaucarne, G.

“…Hydrogenation by high temperature rapid annealing of SiNx:H is found to be very effective on the defects responsible for the carrier trapping effect in…”
Get full text

Infrared molar absorption coefficient of H2O stretching modes in SiO2 by Dekkers, H.F.W., Gallo, A., Van Elshocht, S.

“…Infrared absorption of the H2O stretching modes around 3400cm−1 is commonly used to detect the presence of H2O inside SiO2. Obtaining the exact concentration…”
Get full text

Molecular hydrogen formation in hydrogenated silicon nitride by Dekkers, H. F. W., Beaucarne, G., Hiller, M., Charifi, H., Slaoui, A.

“…Hydrogen is released from hydrogenated silicon nitride ( Si N x : H ) during thermal treatments. The formation of molecular hydrogen ( H 2 ) in Si N x : H…”
Get full text

Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H by Dekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G.

“…The infrared absorption of hydrogenated silicon nitride (SiNx:H) films provides information about the average configuration of covalent bonds in the film. In…”
Get full text

The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD by Verlaan, V., Verkerk, A.D., Arnoldbik, W.M., van der Werf, C.H.M., Bakker, R., Houweling, Z.S., Romijn, I.G., Borsa, D.M., Weeber, A.W., Luxembourg, S.L., Zeman, M., Dekkers, H.F.W., Schropp, R.E.I.

“…Silicon nitride (SiN x ) is a material with many applications and can be deposited with various deposition techniques. Series of SiN x films were deposited…”
Get full text

Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si by DEKKERS, H. F. W, DE WOLF, S, AGOSTINELLI, G, DUERINCKX, F, BEAUCARNE, G

Get full text

Study of the hydrogenation mechanism by rapid thermal anneal of SiN:H in thin-film polycrystalline-silicon solar cells by Carnel, L., Dekkers, H.F.W., Gordon, I., Van Gestel, D., Van Nieuwenhuysen, K., Beaucarne, G., Poortmans, J.

“…A considerable cost reduction in photovoltaics could be achieved if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) films…”
Get full text

High temperature line electrode assembly for continuous substrate flow VHF PECVD by Schade, K., Stahr, F., Kuske, J., Röhlecke, S., Steinke, O., Stephan, U., Dekkers, H.F.W.

“…Plasma enhanced chemical vapour deposition is a preferred deposition technique for various thin films with high deposition rates. The increase of the…”
Get full text

Determination of effective diffusion length and saturation current density in silicon solar cells by Zhu, J.M., Shen, W.Z., Zhang, Y.H., Dekkers, H.F.W.

“…We have presented an improved method for the determination of both effective diffusion length ( L eff) and saturation current density ( J 01, J 02) in silicon…”
Get full text

Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells by Bertoni, M I, Hudelson, S, Newman, B K, Bernardis, S, Fenning, D P, Dekkers, H F W, Cornagliotti, E, Zuschlag, A, Micard, G, Hahn, G, Coletti, G, Lai, B, Buonassisi, T

“…In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline…”
Get full text

Origin of visible luminescence in hydrogenated amorphous silicon nitride by Hao, H. L., Wu, L. K., Shen, W. Z., Dekkers, H. F. W.

“…We present a detailed investigation on the origin of the room-temperature visible luminescence in hydrogenated amorphous silicon nitride films. In combination…”
Get full text

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature by Sheoran, Manav, Kim, Dong Seop, Rohatgi, Ajeet, Dekkers, H. F. W., Beaucarne, G., Young, Matthew, Asher, Sally

“…The stable hydrogen isotope deuterium (D), which is released during the annealing of deuterated silicon nitride films, diffuses through the crystalline silicon…”
Get full text

Influence of density on N  H bond stretch vibration in plasma enhanced chemical vapor deposited SiN x : H by Dekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G.

“…The infrared absorption of hydrogenated silicon nitride ( SiN x : H ) films provides information about the average configuration of covalent bonds in the film…”
Get full text

Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiN{sub x}:H by Dekkers, H. F. W., Pourtois, G., Srinivasan, Nagendra Babu

“…The infrared absorption of hydrogenated silicon nitride (SiN{sub x}:H) films provides information about the average configuration of covalent bonds in the…”
Get full text

Carrier trap passivation in multicrystalline Si solar cellsby hydrogen from Si N x : H layers by Dekkers, H. F. W., Carnel, L., Beaucarne, G.

“…Hydrogenation by high temperature rapid annealing of Si N x : H is found to be very effective on the defects responsible for the carrier trapping effect in…”
Get full text

Requirements of PECVD SiNx:H layers for bulk passivation of me-Si by Dekkers, H F W, De Wolf, S, Agostinelli, G, Duerinckx, F, Beaucarne, G

“…Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has…”
Get full text

Rear Surface Passivation for Industrial Solar Cells on Thin Substrates by Agostinelli, G., Choulat, P., Dekkers, H.F.W., Vermarien, E., Beaucarne, G.

“…The use of hydrogenated silicon nitride is one of the most significant technological evolutions that has taken place in solar cells industry, due to its…”
Get full text