Search Results - "DEHAN, M"

Effect of Intra- and Extrauterine Growth on Long-Term Neurologic Outcomes of Very Preterm Infants by Guellec, Isabelle, MD, Lapillonne, Alexandre, MD, PhD, Marret, Stephane, MD, PhD, Picaud, Jean-Charles, MD, PhD, Mitanchez, Delphine, MD, PhD, Charkaluk, Marie-Laure, MD, PhD, Fresson, Jeanne, MD, PhD, Arnaud, Catherine, MD, PhD, Flamand, Cyril, MD, PhD, Cambonie, Gilles, MD, PhD, Kaminski, Monique, PhD, Roze, Jean-Christophe, MD, PhD, Ancel, Pierre-Yves, MD, PhD

“…Objective To determine whether extrauterine growth is associated with neurologic outcomes and if this association varies by prenatal growth profile. Study…”
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Use of nongynecologic cytologic–histologic correlation to identify patterns of error: An institutional experience by O’Conor, Christopher J., Dehan, Lauren M., Ely, Kim A.

“…Background Quality management practices empower cytology laboratories to deliver consistent, high‐quality patient care. Monitoring of key performance…”
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Survival of very preterm infants: Epipage, a population based cohort study by Larroque, B, Bréart, G, Kaminski, M, Dehan, M, André, M, Burguet, A, Grandjean, H, Ledésert, B, Lévêque, C, Maillard, F, Matis, J, Rozé, J C, Truffert, P

“…Objective: To evaluate the outcome for all infants born before 33 weeks gestation until discharge from hospital. Design: A prospective observational population…”
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Influence of device engineering on the analog and RF performances of SOI MOSFETs by Kilchytska, V., Neve, A., Vancaillie, L., Levacq, D., Adriaensen, S., van Meer, H., De Meyer, K., Raynaud, C., Dehan, M., Raskin, J.-P., Flandre, D.

“…This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD)…”
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A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS by Borremans, J., Bevilacqua, A., Bronckers, S., Dehan, M., Kuijk, M., Wambacq, P., Craninckx, J.

“…As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless…”
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What are the limiting parameters of deep-submicron MOSFETs for high frequency applications? by Dambrine, G., Raynaud, C., Lederer, D., Dehan, M., Rozeaux, O., Vanmackelberg, M., Danneville, F., Lepilliet, S., Raskin, J.-P.

“…Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs with the downscaling process of the channel gate length are…”
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Impact of fin width on digital and analog performances of n-FinFETs by Subramanian, V., Mercha, A., Parvais, B., Loo, J., Gustin, C., Dehan, M., Collaert, N., Jurczak, M., Groeseneken, G., Sansen, W., Decoutere, S.

“…This paper examines the impact of an important geometrical parameter of FinFET devices, namely the fin width. From static and low-frequency measurements on…”
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Stochastic Matching Properties of FinFETs by Gustin, C., Mercha, A., Loo, J., Subramanian, V., Parvais, B., Dehan, M., Decoutere, S.

“…For the first time, an experimental assessment of the intradie mismatch properties of a FinFET technology is presented. By applying the analysis to different…”
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Pharmacokinetic risk factors of beta-blockers overdose in the elderly: Case report and pharmacology approach by Lafarge, L, Bourguignon, L, Bernard, N, Vial, T, Dehan-Moya, M-J, De La Gastine, B, Goutelle, S

“…Beta-blockers are widely prescribed in elderly patients and may induce severe adverse drug reactions. We report a case of bisoprolol-induced bradycardia in an…”
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Matching Performance of FinFET Devices With Fin Widths Down to 10 nm by Magnone, P., Mercha, A., Subramanian, V., Parvais, P., Collaert, N., Dehan, M., Decoutere, S., Groeseneken, G., Benson, J., Merelle, T., Lander, R.J.P., Crupi, F., Pace, C.

“…In this letter, the matching performances of FinFET devices with high- k dielectric, metal gates, and fin widths down to 10 nm are experimentally analyzed. The…”
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The relationships between antenatal management, the cause of delivery and neonatal outcome in a large cohort of very preterm singleton infants by Baud, O., Zupan, V., Lacaze‐Masmonteil, T., Audibert, F., Shojaei, T., Thebaud, B., Ville, Y., Frydman, R., Dehan, M.

“…Objective To determine whether the cause of very preterm delivery influences neonatal outcome. Design A cohort study of 685 consecutive singletons born before…”
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Patterns of Major Frozen Section Interpretation Error: An In-Depth Analysis From a Complex Academic Surgical Pathology Practice by Dehan, Lauren M, Lewis, James S, Mehrad, Mitra, Ely, Kim A

“…Abstract Objectives To establish baseline error rates due to misinterpretation and to identify scenarios in which major errors were most common and potentially…”
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The Potential of FinFETs for Analog and RF Circuit Applications by Wambacq, P., Verbruggen, B., Scheir, K., Borremans, J., Dehan, M., Linten, D., De Heyn, V., Van der Plas, G., Mercha, A., Parvais, B., Gustin, C., Subramanian, V., Collaert, N., Jurczak, M., Decoutere, S.

“…CMOS downscaling in the nanoscale era will necessitate drastic changes to the planar bulk CMOS transistor to keep pace with the required speed increase while…”
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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter? by Trojman, L., Pantisano, L., Dehan, M., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

“…One of the fundamental questions for gate-stack scaling is whether the low-field mobility measured in long-channel devices is a good proxy for short-channel…”
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Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices by Magnone, P., Subramanian, V., Parvais, B., Mercha, A., Pace, C., Dehan, M., Decoutere, S., Groeseneken, G., Crupi, F., Pierro, S.

“…In this work, we investigate the gate voltage and the geometry dependence of the series resistance and the carrier mobility in n-type and p-type FinFETs. A…”
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Molecular signature incorporating the immune microenvironment enhances thyroid cancer outcome prediction by Xu, George J., Loberg, Matthew A., Gallant, Jean-Nicolas, Sheng, Quanhu, Chen, Sheau-Chiann, Lehmann, Brian D., Shaddy, Sophia M., Tigue, Megan L., Phifer, Courtney J., Wang, Li, Saab-Chalhoub, Mario W., Dehan, Lauren M., Wei, Qiang, Chen, Rui, Li, Bingshan, Kim, Christine Y., Ferguson, Donna C., Netterville, James L., Rohde, Sarah L., Solórzano, Carmen C., Bischoff, Lindsay A., Baregamian, Naira, Shaver, Aaron C., Mehrad, Mitra, Ely, Kim A., Byrne, Daniel W., Stricker, Thomas P., Murphy, Barbara A., Choe, Jennifer H., Kagohara, Luciane T., Jaffee, Elizabeth M., Huang, Eric C., Ye, Fei, Lee, Ethan, Weiss, Vivian L.

“…Genomic and transcriptomic analysis has furthered our understanding of many tumors. Yet, thyroid cancer management is largely guided by staging and histology,…”
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PTEN expression and morphological patterns in prostatic adenocarcinoma by Spieker, Andrew J, Gordetsky, Jennifer B, Maris, Alexander S, Dehan, Lauren M, Denney, James E, Arnold Egloff, Shanna A, Scarpato, Kristen, Barocas, Daniel A, Giannico, Giovanna A

“…Aims Cribriform morphology, which includes intraductal carcinoma (IDCP) and invasive cribriform carcinoma, is an indicator of poor prognosis in prostate…”
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Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors by Linten, D., Xiao Sun, Carchon, G., Jeamsaksiri, W., Mercha, A., Ramos, J., Jenei, S., Wambacq, P., Dehan, M., Aspemyr, L., Scholten, A.J., Decoutere, S., Donnay, S., De Raedt, W.

“…Wafer-level packaging (WLP) technology offers novel opportunities for the realization of high-quality on-chip passives needed in RF front-ends. This paper…”
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Passive on-chip components: Trends and challenges for RF applications by Decoutere, S., Carchon, G., Dehan, M., Mercha, A.

“…The continuous improvement of Si-based active device technology requests further improvements in RF passive technology, to overcome limitations in power…”
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Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems by Flandre, D, Adriaensen, S, Akheyar, A, Crahay, A, Demeûs, L, Delatte, P, Dessard, V, Iniguez, B, Nève, A, Katschmarskyj, B, Loumaye, P, Laconte, J, Martinez, I, Picun, G, Rauly, E, Renaux, C, Spôte, D, Zitout, M, Dehan, M, Parvais, B, Simon, P, Vanhoenacker, D, Raskin, J.-P

“…Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work…”
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