Search Results - "DEGROOTE, Stefan"

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications by Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage…”
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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a novel approach to enhance the breakdown voltage ( V BD ) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by…”
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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment by Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN…”
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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
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Solid phase epitaxy of amorphous Ge films deposited by PECVD by Ma, Quan-Bao, Lieten, Ruben, Leys, Maarten, Degroote, Stefan, Germain, Marianne, Borghs, Gustaaf

“…Amorphous thin Ge films were deposited by plasma enhanced chemical vapor deposition (PECVD) on Si(1 1 1) substrates and then annealed at 600 °C in N 2…”
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Surface recombination velocity in GaAs and In0.15Ga0.85As thin films by Brammertz, Guy, Heyns, Marc, Meuris, Marc, Caymax, Matty, Jiang, Dehuai, Mols, Yves, Degroote, Stefan, Leys, Maarten, Borghs, Gustaaf

“…The authors have made photoluminescence intensity (PLI) measurements on thin GaAs and InGaAs films to compare the surface recombination velocity at interfaces…”
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Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors by Zimmermann, Lars, John, Joachim, Degroote, Stefan, Borghs, Gustaaf, Van Hoof, Chris, Nemeth, Stefan

“…We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard…”
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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures by Wang, Wenfei, Derluyn, Joff, Germain, Marianne, Leys, Maarten, Degroote, Stefan, Schreurs, Dominique, Borghs, Gustaaf

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon by Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

“…We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a…”
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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
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Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Idriss Abid, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance by Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting by Ma, Quan-Bao, Lieten, Ruben, Degroote, Stefan, Germain, Marianne, Borghs, Gustaaf

“…Indium-rich InGaN films were grown on Ge(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the indium flux on the structural…”
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Gallium nitride MEMS resonators: how residual stress impacts design and performances by Morelle, Christophe, Théron, Didier, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Zhang, Victor, Buchaillot, Lionel, Grimbert, Bertrand, Tilmant, Pascal, Vaurette, François, Roch-Jeune, Isabelle, Brandli, Virginie, Avramovic, Vanessa, Okada, Etienne, Faucher, Marc

“…Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed,…”
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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity by Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure by Abid, I., Kabouche, R., Medjdoub, F., Besendorfer, S., Meissner, E., Derluyn, J., Degroote, S., Germain, M., Miyake, H.

“…Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials…”
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Selective epitaxial growth of GaAs on Ge by MOCVD by Brammertz, Guy, Mols, Yves, Degroote, Stefan, Leys, Maarten, Van Steenbergen, Jan, Borghs, Gustaaf, Caymax, Matty

“…We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO 2 mask layer. The selectively grown structures have…”
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Experimental and simulation study of breakdown voltage enhancementof AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
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Selective epitaxial growth of GaAs on Ge by MOCVD Guy Brammertz, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van Steenbergen by Brammertz, Guy, Mols, Yves, Degroote, Stefan, Leys, Maarten, VanSteenbergen, Jan

“…We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have…”
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