Search Results - "DE SCHEPPER, L"
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1
Observation of the subgap optical absorption in polymer-fullerene blend solar cells
Published in Applied physics letters (30-01-2006)“…This letter reports on highly sensitive optical absorption measurements on organic donor-acceptor solar cells, using Fourier-transform photocurrent…”
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Journal Article -
2
Disclosure of the nanostructure of MDMO-PPV:PCBM bulk hetero-junction organic solar cells by a combination of SPM and TEM
Published in Synthetic metals (02-06-2003)“…The microstructure of MDMO-PPV:PCBM blends as used in bulk hetero-junction organic solar cells is studied by atomic force microscopy (AFM) to image the surface…”
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Journal Article Conference Proceeding -
3
Absorption phenomena in organic thin films for solar cell applications investigated by photothermal deflection spectroscopy
Published in Journal of materials science (01-03-2005)“…A high sensitive approach is presented to detect in particular the low level absorption features in pure and blended organic semiconductor films, revealing…”
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4
A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-09-2020)“…This paper proposes a charge-to-breakdown (Q BD ) approach for SiC/SiO 2 dielectric lifetime extraction. The current through the dielectric is shown to be a…”
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Conference Proceeding -
5
The stability of Pt heater and temperature sensing elements for silicon integrated tin oxide gas sensors
Published in Sensors and actuators. B, Chemical (30-06-2000)“…Good performance of alarm systems and environmental as well as industrial control methods requires an optimal operation of the gas sensors involved. An…”
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Journal Article -
6
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14-04-2024)“…This paper introduces a novel three-dimensional approach to model threshold voltage variation (\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}}) during…”
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Conference Proceeding -
7
The phosphorous level fine structure in homoepitaxial and polycrystalline n-type CVD diamond
Published in Diamond and related materials (01-11-2004)“…The application of very sensitive photocurrent-based spectroscopic techniques have led to the detection of new levels for the electronic structure of the…”
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Journal Article Conference Proceeding -
8
Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements
Published in Microelectronic engineering (01-06-2005)“…A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution,…”
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9
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation
Published in Microelectronics and reliability (01-03-2001)“…The hot-carrier degradation of lightly doped drain nMOSFETs is studied in detail. The degradation proceeds in a two-stage mechanism, involving first a series…”
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10
Statistical aspects of the degradation of LDD nMOSFETs
Published in Microelectronics and reliability (01-09-2002)Get full text
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11
A comparison between state-of-the-art ‘gilch’ and ‘sulphinyl’ synthesised MDMO-PPV/PCBM bulk hetero-junction solar cells
Published in Thin solid films (01-02-2002)“…To obtain photovoltaic devices based on electron donating conjugated polymers with a higher efficiency, a major breakthrough was realised by mixing the…”
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12
Reversible Switching of the Surface Conductance of Hydrogenated CVD Diamond Films
Published in Physica status solidi. A, Applied research (01-08-2001)“…Chemical vapor deposited (CVD) diamond films have a controversial history regarding their surface electronic properties. Hydrogenation is known to induce a…”
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Journal Article Conference Proceeding -
13
Spatial distribution of interface traps in DeMOS transistors
Published in IEEE electron device letters (01-08-2004)“…The spatial distribution of interface traps in a p-type drain extended MOS transistor is experimentally determined by the analysis of variable base-level…”
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14
Nanostructured organic pn junctions towards 3D photovoltaics
Published in Applied physics. A, Materials science & processing (01-06-2004)“…The working principle of so-called organic bulk heterojunction solar cells prepared with blends of poly(2-methoxy-5-(3',7'-dimethyl-octyloxy))-p-phenylene…”
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15
Poly(5,6-dithiooctylisothianaphtene), a new low band gap polymer: spectroscopy and solar cell construction
Published in Synthetic metals (02-06-2003)“…To enhance the efficiency of polymer photovoltaics, much effort is put into synthesis of novel compounds which show a better harvesting of solar light. In this…”
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Journal Article Conference Proceeding -
16
Influence of annealing on the electronic properties of chemical vapor deposited diamond films studied by high vacuum scanning tunneling microscopy and spectroscopy
Published in Diamond and related materials (01-02-2002)“…Scanning tunneling spectroscopy (STS) under high vacuum conditions (2×10 −8 mbar), combined with high-resolution topographical imaging with the scanning…”
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17
Investigation of the formation process of MCs +-molecular ions during sputtering
Published in Journal of the American Society for Mass Spectrometry (01-07-2000)“…In secondary ion mass spectrometry, the detection of MCs + clusters (with M an element of the specimen) under a Cs + bombardment is frequently used for the…”
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18
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric
Published in Microelectronics and reliability (01-08-2008)“…Metal–insulator–metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime, breakdown voltage and leakage current. In this…”
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Journal Article Conference Proceeding -
19
Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation
Published in Microelectronics and reliability (01-09-2001)“…The reliability of Heterojunction Bipolar Transistors (HBT's) depends on parameters such as junction temperature and current density. For the description of…”
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20
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology
Published in Microelectronics and reliability (01-09-2002)Get full text
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