Search Results - "DAUPLAISE, H. M"

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes by Teynor, W. A., Vaccaro, K., Buchwald, W. R., Dauplaise, H. M., Morath, C. P., Davis, A., Roland, M. A., Clark, W. R.

“…A cadmium sulfide (CdS) passivation process was demonstrated for the first time on InGaAs/InP p-i-n mesa photodetectors. The passivated devices produced lower…”
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Indium phosphide passivation using thin layers of cadmium sulfide by Vaccaro, K., Dauplaise, H. M., Davis, A., Spaziani, S. M., Lorenzo, J. P.

“…The electrical properties of the silicon dioxide/n-type (100) InP interface were significantly improved by thin interlayers of chemical bath deposited CdS. The…”
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Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics by STADLER, B. J. H, VACCARO, K, DAVIS, A, RAMSEYER, G. O, MARTIN, E. A, DAUPLAISE, H. M, THEODORE, L. M, LORENZO, J. P

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Cadmium sulfide surface stabilization for InP-based optoelectronic devices by VACCARO, K, DAVIS, A, DAUPLAISE, H. M, SPAZIANI, S. M, MARTIN, E. A, LORENZO, J. P

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Ion assisted deposition of oxynitrides of aluminum and silicon by Al‐Jumaily, G. A., Mooney, T. A., Spurgeon, W. A., Dauplaise, H. M.

“…Optical thin films of nitrides, oxynitrides, and oxides of aluminum and silicon were deposited using ion assisted deposition. Coatings were deposited by…”
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Processing and interface analysis of CdS-passivated InP by Dauplaise, H.M., Vaccaro, K., Davis, A., Waters, W.D., Lorenzo, J.P.

“…The success of silicon is largely due to the availability of CMOS technology, which is made possible by the nearly perfect electrical and chemical properties…”
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High-performance InGaAs-InP APDs on GaAs by Franco, D.S., Vaccaro, K., Clark, W.R., Teynor, W.A., Dauplaise, H.M., Roland, M., Krejca, B., Lorenzo, J.P.

“…Epitaxial layer transfer was used to fabricate In/sub 0.53/Ga/sub 0.47/As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a…”
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Cadmium sulfide passivation of InTaAs/InP mesa p-i-n photodiodes by TEYNOR, W. A, VACCARO, K, BUCHWALD, W. R, DAUPLAISE, H. M, MORATH, C. P, DAVIS, A, ROLAND, M. A, CLARK, W. R

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Effects of ytterbium addition on liquid phase epitaxial growth of InGaAs/InP heterostructures by Davis, A., Dauplaise, H.M., Gregg, M.R., Lorenzo, J.P., Walsh, L.D., Mattila, J.B.

“…The effects of ytterbium addition to the melt of InGaAs grown on InP by liquid phase epitaxy are studied. Samples were examined by double-crystal X-ray…”
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Passivation of InP with thin layers of MBE-grown CdS by Dauplaise, H.M., Vaccaro, K., Davis, A., Waters, W.D., Lorenzo, J.P.

“…Thin layers of CdS were grown on [100] n-InP by molecular beam epitaxy (MBE). Substrates were pre-treated in an ammonia/thiourea solution, then annealed at…”
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Cadmium sulfide surface stabilization and Schottky barrier enhancement for InP based optoelectronic devices by Vaccaro, K., Spaziani, S.M., Davis, A., Dauplaise, H.M., Martin, E.A., Lorenzo, J.P.

“…We have investigated the use of CdS interlayers grown by chemical bath deposition (CBD). We have deposited CdS on a wide variety of III-V semiconductors. We…”
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Evaporated thin silicon interlayers for indium phosphide device applications by Dauplaise, H.M., Lorenzo, J.P., Martin, E.A., Vaccaro, K., Ramseyer, G.O.

“…The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in…”
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Characterization of semiconducting thin films on InP for magneto-optical applications by Stadler, B.J., Davis, A., Martin, E.A., Vaccaro, K., Dauplaise, H.M., Bouthillette, L.O., Spaziani, S.M., Lorenzo, J.P., Ramseyer, G.

“…We have investigated the properties of thin film magneto-optical materials grown in the III-V materials system. These materials can be used to expand the…”
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