Search Results - "D. Zhuang, Q."

Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy by Zhuang, Q. D, Anyebe, Ezekiel A, Chen, R, Liu, H, Sanchez, Ana M, Rajpalke, Mohana K, Veal, Tim D, Wang, Z. M, Huang, Y. Z, Sun, H. D

“…For the first time, we report a complete control of crystal structure in InAs1–x Sb x NWs by tuning the antimony (Sb) composition. This claim is substantiated…”
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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots by Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., Molina, S. I.

“…The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning…”
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Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots by Chang, Y C, Robson, A J, Harrison, S, Zhuang, Q D, Hayne, M

“…We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between…”
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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor by Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.

“…Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene…”
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Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors by Anyebe, Ezekiel A., Sandall, I., Jin, Z. M., Sanchez, Ana M., Rajpalke, Mohana K., Veal, Timothy D., Cao, Y. C., Li, H. D., Harvey, R., Zhuang, Q. D.

“…The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid…”
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Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP by Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D., Krier, A.

“…Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and…”
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Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings by Hodgson, P. D., Young, R. J., Kamarudin, M. Ahmad, Zhuang, Q. D., Hayne, M.

“…We present the results of photoluminescence (PL) measurements on a type-II GaSb/GaAs quantum dot/ring sample as a function of temperature (2 to 400 K) and over…”
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Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction by Yuan, K., Radhakrishnan, K., Zheng, H.Q., Zhuang, Q.D., Ing, G.I.

“…High-resolution X-ray diffraction (HRXRD) was used to characterize linearly graded metamorphic InGaP buffer layers grown at different temperatures on GaAs…”
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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor by Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.

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Hydrogenation of GaSb/GaAs quantum rings by Hodgson, P. D., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q. D., Birindelli, S., Capizzi, M.

“…We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K…”
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Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities by Kozlova, N. V., Pettinari, G., Makarovsky, O., Mori, N., Polimeni, A., Capizzi, M., Zhuang, Q. D., Krier, A., Patanè, A.

“…We provide evidence for the unique effect of hydrogen on the transport properties of the mid-infrared alloy In(AsN). High electron concentrations and…”
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires by Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAS1-xSbx nanowires by Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

“…The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires （NWs） has been systematically investigated. InAs NWs were grown by molecular…”
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Interaction of fluorocarbon and hydrocarbon hydrophobically co-modified PAA with a nonionic surfactant: rheological properties of polymer solutions in the absence of salt by Zhuang, D.Q., Cao, Y., Zhang, H.D., Yang, Y.L., Zhang, Y.X.

“…The interaction of a new hydrocarbon (HC) and fluorocarbon (FC) co-modified poly(acrylic acid), SA-1-FX14-1, with a HC nonionic surfactant, Np7.5, was…”
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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice by Zhuang, Q.D., Yoon, S.F., Zheng, H.Q.

“…We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs…”
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Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance by Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, Po-Wei, Tsai, G.

“…In narrow-gap semiconductors, non-radiative Auger recombination losses (via conduction, heavy-hole, spin split-off hole, heavy-hole processes) are sensitive to…”
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Effect of rapid thermal annealing on InGaAs/GaAs quantum wells by Zhuang, Q.D, Li, J.M, Zeng, Y.P, Yoon, S.F, Zheng, H.Q, Kong, M.Y, Lin, L.Y

“…We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal…”
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Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy by Zhuang, Q.D, Yoon, S.F, Zheng, H.Q, Yuan, K.H

“…Self-organized InAs quantum dots (QDs) on InP (100) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM)…”
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Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures by Zhuang, Q.D., Li, J.M., Zeng, Y.P., Pan, L., Li, H.X., Kong, M.Y., Lin, L.Y.

“…InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8–12 μm infrared…”
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Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice by Zhuang, Q.D, Li, J.M, Wang, X.X, Zeng, Y.P, Wang, Y.T, Wang, B.Q, Pan, L, Wu, J, Kong, M.Y, Lin, L.Y

“…Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice…”
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