Search Results - "Curson, Neil"

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy by Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S, Kölker, Alexander, McKenzie, David R, Schofield, Steven R, Curson, Neil J

“…Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling…”
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO 2 interface by Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

“…We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state…”
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface by Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

“…We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO2 interface. Our measurements demonstrate that two-state…”
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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication by Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J.

“…Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic,…”
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EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning by Constantinou, Procopios, Stock, Taylor J. Z., Tseng, Li-Ting, Kazazis, Dimitrios, Muntwiler, Matthias, Vaz, Carlos A. F., Ekinci, Yasin, Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.

“…Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic…”
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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface by Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R.

“…Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over…”
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Substitutional Tin Acceptor States in Black Phosphorus by Wentink, Mark, Gaberle, Julian, Aghajanian, Martik, Mostofi, Arash A, Curson, Neil J, Lischner, Johannes, Schofield, Steven R, Shluger, Alexander L, Kenyon, Anthony J

“…Nominally pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic,…”
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Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001) by Lundgren, Eric A. S., Byron, Carly, Constantinou, Procopios, Stock, Taylor J. Z., Curson, Neil J., Thomsen, Lars, Warschkow, Oliver, Teplyakov, Andrew V., Schofield, Steven R.

“…We investigate the adsorption and thermal decomposition of triphenyl bismuth (TPB) on the silicon (001) surface using atomic-resolution scanning tunneling…”
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Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices by Le, Nguyen H., Fisher, Andrew J., Curson, Neil J., Ginossar, Eran

“…Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study…”
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Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon by Constantinou, Procopios, Stock, Taylor J Z, Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J, Strocov, Vladimir N, Aeppli, Gabriel, Curson, Neil J, Schofield, Steven R

“…Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices…”
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Nondestructive imaging of atomically thin nanostructures buried in silicon by Gramse, Georg, Kölker, Alexander, Lim, Tingbin, Stock, Taylor J Z, Solanki, Hari, Schofield, Steven R, Brinciotti, Enrico, Aeppli, Gabriel, Kienberger, Ferry, Curson, Neil J

“…It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to…”
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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy by Sinthiptharakoon, Kitiphat, Schofield, Steven R, Studer, Philipp, Brázdová, Veronika, Hirjibehedin, Cyrus F, Bowler, David R, Curson, Neil J

“…We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number…”
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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon by D'Anna, Nicolò, Ferreira Sanchez, Dario, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J.Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel

“…The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated…”
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Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms by Masteghin, Mateus G., Gervais, Toussaint, Clowes, Steven K., Cox, David C., Zelyk, Veronika, Pattammattel, Ajith, Chu, Yong S., Kolev, Nikola, Stock, Taylor J. Z., Curson, Neil J., Evans, Paul G., Stuckelberger, Michael, Murdin, Benedict N.

“…Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being…”
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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface by Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R.

“…Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over…”
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Resistless EUV lithography: Photon-induced oxide patterning on silicon by Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C, Stock, Taylor J Z, Curson, Neil J, Schofield, Steven R, Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin

“…In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV…”
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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy by Studer, Philipp, Schofield, Steven R., Hirjibehedin, Cyrus F., Curson, Neil J.

“…The atomic scale structural and electronic characteristics of a silicon sample implanted with bismuth atoms are investigated using cross-sectional scanning…”
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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy by Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G

“…We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In…”
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Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface by Studer, Philipp, Brázdová, Veronika, Schofield, Steven R, Bowler, David R, Hirjibehedin, Cyrus F, Curson, Neil J

“…We report that solitary bismuth and antimony atoms, incorporated at Si(111) surfaces, induce either positive or negative charge states depending on the site of…”
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Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy by Thompson, Robert J, Fearn, Sarah, Tan, Ke Jie, Cramer, Hans George, Kloc, Christian L, Curson, Neil J, Mitrofanov, Oleg

“…To address the question of surface oxidation in organic electronics the chemical composition at the surface of single crystalline rubrene is spatially profiled…”
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