Search Results - "Curson, N J"

Quantum engineering at the silicon surface using dangling bonds by Schofield, S. R., Studer, P., Hirjibehedin, C. F., Curson, N. J., Aeppli, G., Bowler, D. R.

“…Individual atoms and ions are now routinely manipulated using scanning tunnelling microscopes or electromagnetic traps for the creation and control of…”
Get full text

Atomically precise placement of single dopants in si by Schofield, S R, Curson, N J, Simmons, M Y, Ruess, F J, Hallam, T, Oberbeck, L, Clark, R G

“…We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We…”
Get full text

Phosphine dissociation on the Si(001) surface by WILSON, H. F, WARSCHKOW, O, MARKS, N. A, SCHOFIELD, S. R, CURSON, N. J, SMITH, P. V, RADNY, M. W, MCKENZIE, D. R, SIMMONS, M. Y

“…Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the…”
Get full text

Progress in silicon-based quantum computing by Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.

“…We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on…”
Get full text

Phosphine adsorption and dissociation on the Si(001) surface : An ab initio survey of structures by WARSCHKOW, O, WILSON, H. F, MARKS, N. A, SCHOFIELD, S. R, CURSON, N. J, SMITH, P. V, RADNY, M. W, MCKENZIE, D. R, SIMMONS, M. Y

Get full text

Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy by Oberbeck, L., Curson, N. J., Hallam, T., Simmons, M. Y., Bilger, G., Clark, R. G.

“…In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunneling microscopy (STM) to position dopant atoms and molecular…”
Get full text

STM characterization of the Si-P heterodimer by CURSON, N. J, SCHOFIELD, S. R, SIMMONS, M. Y, OBERBECK, L, O'BRIEN, J. L, CLARK, R. G

Get full text

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1) by Reusch, T.C.G., Warschkow, O., Radny, M.W., Smith, P.V., Marks, N.A., Curson, N.J., McKenzie, D.R., Simmons, M.Y.

“…We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations…”
Get full text

Initial growth of Ba on Ge ( 001 ) : An STM and DFT study by Koczorowski, W., Puchalska, A., Grzela, T., Radny, M. W., Jurczyszyn, L., Schofield, S. R., Czajka, R., Curson, N. J.

Get full text

Ge(001) surface reconstruction with Sn impurities by Noatschk, K., Hofmann, E.V.S., Dabrowski, J., Curson, N.J., Schroeder, T., Klesse, W.M., Seibold, G.

“…•First principle calculation for the Ge(001) surface•Ising-type model, with interaction constants taken from density functional theory.•Stability of the…”
Get full text

Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond by Reusch, T.C.G., Curson, N.J., Schofield, S.R., Hallam, T., Simmons, M.Y.

“…We present a comparative scanning tunnelling microscopy (STM) study of two features on the Si(0 0 1) surface with a single dangling bond. One feature is the…”
Get full text

Modification of a shallow 2DEG by AFM lithography by Nemutudi, R., Curson, N.J., Appleyard, N.J., Ritchie, D.A., Jones, G.A.C.

“…A conducting tip of an atomic force microscope (AFM) is used to induce ultra-small oxide patterns on metallic (Ti) thin film and semiconducting (GaAs)…”
Get full text

STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer by Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Clark, R.G.

“…The fabrication of atomic-scale devices in silicon requires the encapsulation of dopant atoms which have been incorporated into the silicon surface at…”
Get full text

Scanning probe microscopy for silicon device fabrication by Simmons, M.Y., Ruess, F.J., Goh, K.E.J., Hallam, T., Schofield, S.R., Oberbeck, L., Curson, N.J., Hamilton, A.R., Butcher, M.J., Clark, R.G., Reusch, T.C.G.

“…We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a…”
Get full text

Valence surface electronic states on Ge(001) by Radny, M W, Shah, G A, Schofield, S R, Smith, P V, Curson, N J

“…The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F})…”
Get full text

Evolution of the surface morphology of rubrene under ambient conditions by Thompson, R. J., Yadin, B., Grout, Z. J., Hudziak, S., Kloc, C. L., Mitrofanov, O., Curson, N. J.

“…Evolution of the surface morphology and local conductivity on cleaved surfaces of rubrene single crystals is characterized with atomic force microscopy. The…”
Get full text

Critical issues in the formation of atomic arrays of phosphorus in silicon for the fabrication of a solid-state quantum computer by Curson, N.J., Schofield, S.R., Simmons, M.Y., Oberbeck, L., Clark, R.G.

“…We present recent progress towards the fabrication of a silicon-based quantum computer, via a ‘bottom up’ strategy, which exploits a combination of scanning…”
Get full text

Coupling of spin-wave modes in extended ferromagnetic thin film antidot arrays by MCPHAIL, S, GÜRTLER, C. M, SHILTON, J. M, CURSON, N. J, BLAND, J. A. C

Get full text

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer by Oberbeck, L., Curson, N. J., Simmons, M. Y., Brenner, R., Hamilton, A. R., Schofield, S. R., Clark, R. G.

“…The incorporation of phosphorus in silicon is studied by analyzing phosphorus δ-doped layers using a combination of scanning tunneling microscopy, secondary…”
Get full text

Simple design for the transportation of ex situ prepared hydrogen passivated silicon by MacLaren, D. A., Curson, N. J., Atkinson, P., Holst, B., Johnson, D. J., Allison, W.

“…We present a design for a simple, reliable, and robust storage container suitable for the transportation of silicon crystals between clean room and experiment…”
Get full text