Search Results - "Cuppers, Felix"

Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration by Liu, Xiaohua, Bengel, Christopher, Cuppers, Felix, Solfronk, Oliver, Zhang, Bojian, Hoffmann-Eifert, Susanne, Menzel, Stephan, Waser, Rainer, Wiefels, Stefan

“…The one-transistor-one-resistor (1T1R) structure has been widely used in the context of novel neuromorphic applications. It can effectively control the state…”
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On the switching dynamics of epitaxial ferroelectric CeO2–HfO2 thin film capacitors by Cüppers, Felix, Hirai, Koji, Funakubo, Hiroshi

“…Epitaxial layers of ferroelectric orthorhombic HfO 2 are frequently investigated as model systems for industrially more relevant polycrystalline films. The…”
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Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models by Bengel, Christopher, Siemon, Anne, Cuppers, Felix, Hoffmann-Eifert, Susanne, Hardtdegen, Alexander, von Witzleben, Moritz, Hellmich, Lena, Waser, Rainer, Menzel, Stephan

“…Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic…”
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices by Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J, Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications…”
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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns by Bengel, Christopher, Cüppers, Felix, Payvand, Melika, Dittmann, Regina, Waser, Rainer, Hoffmann-Eifert, Susanne, Menzel, Stephan

“…With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with…”
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells by Hardtdegen, Alexander, La Torre, Camilla, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Bipolar redox-based resistive random-access memory cells are intensively studied for new storage class memory and beyond von Neumann computing applications…”
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Intrinsic RESET Speed Limit of Valence Change Memories by von Witzleben, Moritz, Wiefels, Stefan, Kindsmüller, Andreas, Stasner, Pascal, Berg, Fenja, Cüppers, Felix, Hoffmann-Eifert, Susanne, Waser, Rainer, Menzel, Stephan, Böttger, Ulrich

“…During the past decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching…”
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices by Aussen, Stephan, Cüppers, Felix, Funck, Carsten, Jo, Janghyun, Werner, Stephan, Pratsch, Christoph, Menzel, Stephan, Dittmann, Regina, Dunin‐Borkowski, Rafal, Waser, Rainer, Hoffmann‐Eifert, Susanne

“…Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog…”
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells by Hardtdegen, Alexander, La Torre, Camilla, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO x Bilayer ReRAM Cells by Hardtdegen, Alexander, Camilla La Torre, Cuppers, Felix, Menzel, Stephan, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Bipolar redox-based resistive random-access memory cells are intensively studied for new storage class memory and beyond von Neumann computing applications…”
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Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array by Bende, Ankit, Singh, Simranjeet, Jha, Chandan Kumar, Kempen, Tim, Cuppers, Felix, Bengel, Christopher, Zambanini, Andre, Nielinger, Dennis, Patkar, Sachin, Drechsler, Rolf, Waser, Rainer, Merchant, Farhad, Rana, Vikas

“…Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate…”
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NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future by Galicia, Melvin, Menzel, Stephan, Merchant, Farhad, Muller, Maximilian, Chen, Hsin-Yu, Zhao, Qing-Tai, Cuppers, Felix, Jalil, Abdur R., Shu, Qi, Schuffelgen, Peter, Mussler, Gregor, Funck, Carsten, Lanius, Christian, Wiefels, Stefan, von Witzleben, Moritz, Bengel, Christopher, Kopperberg, Nils, Ziegler, Tobias, Ahmad, R. Walied, Kruger, Alexander, Pohls, Leticia, Dittmann, Regina, Hoffmann-Eifert, Susanne, Rana, Vikas, Grutzmacher, Detlev, Wuttig, Matthias, Wouters, Dirk, Vescan, Andrei, Gemmeke, Tobias, Knoch, Joachim, Lemme, Max, Leupers, Rainer, Waser, Rainer

“…The field of neuromorphic computing is approaching an era of rapid adoption driven by the urgent need of a substitute for the von Neumann computing…”
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On the switching dynamics of epitaxial ferroelectric CeO 2 -HfO 2 thin film capacitors by Cüppers, Felix, Hirai, Koji, Funakubo, Hiroshi

“…Epitaxial layers of ferroelectric orthorhombic HfO are frequently investigated as model systems for industrially more relevant polycrystalline films. The…”
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An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing by Chekol, Solomon Amsalu, Cuppers, Felix, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Threshold switching (TS) devices are of great interest for low power artificial neuron applications. In this work, we present an Ag/HfO 2 /Pt based TS device…”
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Direct Comparison of the SET Kinetics of a TiOx/Al2O3-based Memristive Cell in Filamentary- and Area-Mode by Aussen, Stephan, Cuppers, Felix, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Memristive devices based on the valence change mechanism (VCM) are promising candidates for emerging memories and neuromorphic applications. Aggressive scaling…”
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Utilizing the Switching Stochasticity of HfO 2 /TiO x -Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns by Bengel, Christopher, Cüppers, Felix, Payvand, Melika, Dittmann, Regina, Waser, Rainer, Hoffmann-Eifert, Susanne, Menzel, Stephan

“…With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with…”
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Reliability Aspects of Memristive Devices for Computation-in-Memory Applications by Menzel, Stephan, Bengel, Christopher, Mohr, Johannes, Wouters, Dirk, Wiefels, Stefan, Cuppers, Felix, Hoffmann-Eifert, Susanne

“…Due to the high amount of data being processed in modern computing systems, the conventional physical separation of data processing and data storage limits the…”
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices by Aussen, Stephan, Cüppers, Felix, Funck, Carsten, Jo, Janghyun, Werner, Stephan, Pratsch, Christoph, Menzel, Stephan, Dittmann, Regina, Dunin‐Borkowski, Rafal, Waser, Rainer, Hoffmann‐Eifert, Susanne

“…Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog…”
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices by Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J., Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt / TiO 2 / Ti / Pt Nano-sized ReRAM Devices by Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J, Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Redox-type resistive random access memories (ReRAM) based on transition metal oxides are studied as adjustable two-terminal devices for integrated network…”
Get full text