Search Results - "Cullis, A.G."

Transmission microscopy without lenses for objects of unlimited size by Rodenburg, J.M., Hurst, A.C., Cullis, A.G.

“…We demonstrate experimentally, for the first time, a new form of lensless microscopy. The image we obtain contains the entire wavefunction emanating from the…”
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Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM by Bastiman, F., Cullis, A.G., David, J.P.R., Sweeney, S.J.

“…Bi acts as a surfactant in molecular beam epitaxy (MBE) growth on GaAs(100). Incorporation is achieved by disequilibrium at growth temperatures below ∼450°C…”
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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture by Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Kwa, K.S.K., Chattopadhyay, S., Waite, A.M., Tang, Y.T., Evans, A.G.R., Norris, D.J., Cullis, A.G., Paul, D.J., Robbins, D.J.

“…Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with…”
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Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane by Hsu, Po-Yen, Lin, Jing-Jenn, Wu, You-Lin, Hung, Wen-Chang, Cullis, A.G.

“…In this paper a highly sensitive glucose biosensor is proposed based on a polysilicon (poly-Si) wire structure coated with 3-aminopropyltriethoxysilane…”
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InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…The growth of InAs on GaAs(0 0 1) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of…”
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A study of dislocations in AlN and GaN films grown on sapphire substrates by Bai, J., Wang, T., Parbrook, P.J., Lee, K.B., Cullis, A.G.

“…The dislocations in epitaxial AlN film directly grown on (0 0 0 1) sapphire have been investigated by transmission electron microscope and X-ray diffraction…”
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Fabrication of carbon nanotubes by electrical breakdown of carbon-coated Au nanowires by Briston, K.J., Peng, Y., Cullis, A.G., Inkson, B.J.

“…A carbon nanotube has been generated by the electrically-induced breakdown of a carbon-coated Au nanowire. Under high current density the Au in the nanowire…”
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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs by Olsen, S.H., O'Neill, A.G., Chattopadhyay, S., Driscoll, L.S., Kwa, K.S.K., Norris, D.J., Cullis, A.G., Paul, D.J.

“…Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual…”
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Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM by Meidia, H., Cullis, A.G., Schönjahn, C., Münz, W.D., Rodenburg, J.M.

“…We employ high-resolution energy-filtered cross-sectional transmission electron microscopy (EFTEM) to estimate the degree of layer intermixing in a TiAlN/VN…”
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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs by Olsen, S.H., O’Neill, A.G., Norris, D.J., Cullis, A.G., Fobelets, K., Kemhadjian, H.A.

“…The performance of surface channel MOSFET devices is dependent on the Si/SiO 2 interface roughness. This paper examines the performance demonstrated by…”
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Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED by Benedetti, A., Cullis, A.G., Armigliato, A., Balboni, R., Frabboni, S., Mastracchio, G.F., Pavia, G.

“…The use of TiSi 2 layers as ohmic contacts in complementary MOS (CMOS) devices is expected to introduce large distortions in the underlying silicon which may…”
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Computer simulation of atomic displacements in Si, GaAs, and AlAs by Sayed, M., Jefferson, J.H., Walker, A.B., Cullis, A.G.

“…Low energy displacement events produce simple point defects such as Frenkel pairs. Computer simulations of these events are useful as they provide information…”
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Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes by Ashu, P.A., Jefferson, J.H., Cullis, A.G., Hagston, W.E., Whitehouse, C.R.

“…Molecular dynamics simulations on In 1− x Ga x As/GaAs(100) systems are performed showing the dynamics of threading dislocations in the overlayers and the…”
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Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision by Walther, T., Amari, H., Ross, I. M., Wang, T., Cullis, A. G.

“…We have performed lattice resolved annular dark-field ( Z -contrast) scanning transmission electron microscopy and combined this with energy-dispersive X-ray…”
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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system by Lacey, G., Whitehouse, C.R., Parbrook, P.J., Cullis, A.G., Keir, A.M., Möck, P., Johnson, A.D., Smith, G.W., Clark, G.F., Tanner, B.K., Martin, T., Lunn, B., Hogg, J.H.C., Emeny, M.T., Murphy, B., Bennett, S.

“…In-situ X-ray topography (XRT) studies of misfit dislocation generation and movement in epitaxial InGaAs strained-layer structures on (001) GaAs are described…”
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Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots by Fry, P.W., Mowbray, D.J., Itskevich, I.E., Skolnick, M.S., Barker, J.A., O'Reilly, E.P., Hopkinson, M., Al-Khafaji, M., David, J.P.R., Cullis, A.G., Hill, G.

“…A photocurrent spectroscopic study of InAs/GaAs self‐assembled quantum dots is reported. Under an applied electric field an asymmetry of the quantum confined…”
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GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection by Bastiman, F., Cullis, A.G.

“…Native oxide removal on GaAs(0 0 1) wafers under conventional thermal desorption causes severe surface degradation in the form of pitting. Typical surface…”
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Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition by Luxmoore, I.J., Ross, I.M., Cullis, A.G., Fry, P.W., Orr, J., Buckle, P.D., Jefferson, J.H.

“…In this study we have fabricated tungsten containing nano-wires using focused electron and ion beams from a tungsten hexacarbonyl precursor. The temperature…”
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GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the…”
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As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy by Bastiman, F., Cullis, A.G., Hopkinson, M.

“…Atomic resolution scanning tunnelling microscopy (STM) has been used to study in-situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the…”
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