Search Results - "Cukr, M"

Experimental observation of the optical spin transfer torque by Němec, P., Rozkotová, E., Tesařová, N., Trojánek, F., De Ranieri, E., Olejník, K., Zemen, J., Novák, V., Cukr, M., Malý, P., Jungwirth, T.

“…The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the…”
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Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As by Novák, V, Olejník, K, Wunderlich, J, Cukr, M, Výborný, K, Rushforth, A W, Edmonds, K W, Campion, R P, Gallagher, B L, Sinova, Jairo, Jungwirth, T

“…We observe a singularity in the temperature derivative drho/dT of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with…”
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Light-induced magnetization precession in GaMnAs by Rozkotová, E., Němec, P., Horodyská, P., Sprinzl, D., Trojánek, F., Malý, P., Novák, V., Olejník, K., Cukr, M., Jungwirth, T.

“…We report the dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic…”
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Layer-resolved photoelectron diffraction: Electron attenuation anisotropy in GaAs by Bartoš, I., Cukr, M., Jiříček, P.

“…► Unique layer-resolved photoelectron diffraction polar plots. ► Crystals with AlAs monolayers buried under the GaAs(001) c(4×4) surface. ► Large electron…”
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The AFM LAO lithography on GaMnAs layers by Voves, Jan, Cukr, M., Novák, V.

“…We prepared constrictions on ferromagnetic GaMnAs layer by the local anodic oxidation (LAO) using the atomic force microscope (AFM). These oxide lines,…”
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Free carrier induced substrate heating of the epitaxially grown GaMnAs by Novák, V., Olejník, K., Cukr, M.

“…We have observed a dramatic increase of the substrate temperature during the low-temperature epitaxial growth of GaMnAs layers. The increase is attributed to…”
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Molecular beam epitaxy of LiMnAs by Novák, V., Cukr, M., Šobáň, Z., Jungwirth, T., Martí, X., Holý, V., Horodyská, P., Němec, P.

“…We report on the molecular beam epitaxy (MBE) growth of LiMnAs. Our epilayers are of high crystalline quality. The introduction of fluxes of a group-I alkali…”
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Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence by Holý, V., Matěj, Z., Pacherová, O., Novák, V., Cukr, M., Olejník, K., Jungwirth, T.

“…A combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure…”
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Etching enhanced annealing of GaMnAs layers by Olejni´k, K., Novák, V., Cukr, M., Mašek, J., Jungwirth, T.

“…Low temperature annealing of GaMnAs layers has been established as a standard tool for improvement of their magnetic and transport properties. We report on a…”
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LEED structural analysis of GaAs(0 0 1)-c(4 × 4) surface by Romanyuk, O., Jiřı́ček, P., Cukr, M., Bartoš, I.

“…The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(0 0 1)-c(4 × 4) grown by molecular beam epitaxy (MBE) has been…”
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Location of Mn sites in ferromagnetic Ga1−xMnxAs studied by means of X-ray diffuse scattering holography by Kopecký, M., Kub, J., Busetto, E., Lausi, A., Cukr, M., Novák, V., Olejník, K., Wright, J. P., Fábry, J.

“…A three‐dimensional image of the local neighbourhood of Mn atoms in a Ga1−xMnxAs (x = 0.02) layer has been obtained by using X‐ray diffuse scattering…”
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Laser-Induced Precession of Magnetization in GaMnAs by Rozkotova, E., Nemec, P., Sprinzl, D., Horodyska, P., Trojanek, F., Maly, P., Novak, V., Olejnik, K., Cukr, M., Jungwirth, T.

“…We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field…”
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Electron surface states in short-period superlattices: (GaAs) 2/(AlAs) 2(1 0 0)- c(4 × 4) by Jiříček, P., Cukr, M., Bartoš, I., Adell, M., Strasser, T., Schattke, W.

“…The electronic structure of (GaAs) 2/(AlAs) 2(1 0 0)- c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy…”
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Photoluminescence rings in a Corbino disk at quantizing magnetic fields by NOVAK, V, SVOBODA, P, CUKR, M, PRETTL, W

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Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds by Jungwirth, T., Novák, V., Martí, X., Cukr, M., Máca, F., Shick, A. B., Mašek, J., Horodyská, P., Němec, P., Holý, V., Zemek, J., Kužel, P., Němec, I., Gallagher, B. L., Campion, R. P., Foxon, C. T., Wunderlich, J.

“…Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with…”
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Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors by Vašek, P., Svoboda, P., Novák, V., Cukr, M., Výborný, Z., Jurka, V., Stuchlík, J., Orlita, M., Maude, D. K.

“…The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of…”
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Electron mean free path for GaAs(1 0 0)- c(4 × 4) at very low energies by Jiřı́ček, P., Cukr, M., Bartoš, I., Sadowski, J.

“…Electron mean free path (MFP) was determined by the angular resolved photoemission in 10–40 eV energy range for GaAs(1 0 0)- c(4 × 4) by the overlayer method…”
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In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells by Krupko, Yu, Smrčka, L., Vašek, P., Svoboda, P., Cukr, M., Jansen, L.

“…We have investigated experimentally the magnetoresistance of strongly asymmetric double wells. The structures were prepared by inserting a thin Al 0.3Ga 0.7As…”
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Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4) by Jiricek, P., Cukr, M., Bartos, I., Adell, M., Strasser, T., Schattke, W.

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Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/Al0.3Ga0.7As double wells measured as a function of the in-plane magnetic field by Svoboda, P., Krupko, Y., Smrčka, L., Cukr, M., Jungwirth, T., Jansen, L.

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