Characterization of tungsten oxide films produced by reactive pulsed laser deposition

Tungsten oxide thin films have been prepared by reactive pulsed laser deposition (PLD). Substrate heat treatment and oxygen partial pressure during growth are correlated with Auger electron (AES), X-ray photoelectron (XPS), electron energy loss (EELS) and transmittance spectroscopies. Electronic and...

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Bibliographic Details
Published in:	Applied surface science Vol. 218; no. 1; pp. 282 - 290
Main Authors:	Soto, G., Cruz, W.De La, Dı́az, J.A., Machorro, R., Castillón, F.F., Farı́as, M.H.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 30-09-2003 Elsevier Science
Subjects:	AES Characterization methods Composition and phase identification Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Deposition conditions EELS Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings; film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Pulsed laser deposition Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Tungsten oxide XPS Characterization methods Tungsten oxide Deposition conditions Optical properties EELS Pulsed laser deposition XPS AES Annealing XPS: AES: EELS Tungsten oxides Surface composition Transmittance Heat treatments Film growth Thin films EEL spectroscopy Tungsten oxide: Pulsed laser deposition: Optical properties X-ray photoelectron spectra
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Summary:	Tungsten oxide thin films have been prepared by reactive pulsed laser deposition (PLD). Substrate heat treatment and oxygen partial pressure during growth are correlated with Auger electron (AES), X-ray photoelectron (XPS), electron energy loss (EELS) and transmittance spectroscopies. Electronic and mass densities, composition and chemical states are strongly dependent of the deposition conditions. No significant change in the oxygen content in films as a function of substrate or annealing temperature is detected. However, the colored state turns out to be associated to the degree of chemical disorder in the samples, as evidenced by the peak shape of the W 4f transition. Also, the strength of a characteristic energy loss at 6–7 eV appears to be related to the presence of the colored state.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/S0169-4332(03)00677-9