Search Results - "Croon, Jeroen A."

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths by Uren, Michael J., Silvestri, Marco, Casar, Markus, Hurkx, Godefridus Adrianus Maria, Croon, Jeroen A., Sonsky, Jan, Kuball, Martin

“…Dynamic on-resistance (RON) in heavily carbon-doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating…”
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OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown by Meneghini, Matteo, Cibin, Giulia, Bertin, Marco, Hurkx, Godefridus Adrianus Maria, Ivo, Ponky, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is,…”
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Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise by Both, Thiago H., Croon, Jeroen A., Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Scholten, Andries J., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I.

“…A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature…”
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RF Circuit Linearity Optimization Using a General Weak Nonlinearity Model by Wei Cheng, Oude Alink, Mark S., Annema, A. J., Croon, J. A., Nauta, B.

“…This paper focuses on optimizing the linearity in known RF circuits, by exploring the circuit design space that is usually available in today's deep submicron…”
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An easy-to-use mismatch model for the MOS transistor by Croon, J.A., Rosmeulen, M., Decoutere, S., Sansen, W., Maes, H.E.

“…In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to…”
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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications by Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

“…The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the…”
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Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress by Meneghini, Matteo, Rossetto, Isabella, Hurkx, Fred, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper reports the experimental demonstration of time-dependent dielectric breakdown in GaN-based high-electron mobility transistors (HEMTs) submitted to…”
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Noise and Nonlinearity Modeling of Active Mixers for Fast and Accurate Estimation by Wei Cheng, Annema, A J, Croon, J A, Nauta, B

“…This paper presents a model of active mixers for a fast and accurate estimation of noise and nonlinearity. Based on closed-form expressions, this model…”
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A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise by Both, Thiago H., Croon, Jeroen A., Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Scholten, Andries J., Wirth, Gilson I.

“…This paper presents a technique for statistical analysis of MOSFET low-frequency noise (LFN) based on the autocorrelation coefficient of numerous LFN power…”
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A general weak nonlinearity model for LNAs by Wei Cheng, Annema, A.J., Croon, J.A., Klaassen, D.B.M., Nauta, B.

“…This paper presents a general weak nonlinearity model that can be used to model, analyze and describe the distortion behavior of various low noise amplifier…”
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