Search Results - "Croon, J. A."

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation by Rossetto, I., Meneghini, M., Pandey, S., Gajda, M., Hurkx, G. A. M., Croon, J. A., Sonsky, J., Meneghesso, G., Zanoni, E.

“…This paper reports on an extensive analysis of the breakdown of GaN-based Schottky-gated HEMTs submitted to high-voltage stress. The analysis was carried out…”
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An easy-to-use mismatch model for the MOS transistor by Croon, J.A., Rosmeulen, M., Decoutere, S., Sansen, W., Maes, H.E.

“…In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to…”
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Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region by Croon, J. A., Hurkx, G. A. M., Donkers, J. J. T. M., Pandey, S., Sonsky, J.

“…A new methodology is presented that directly extracts the location and amount of trapped charge in GaN HEMTs by making use of a special test structure with an…”
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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications by Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

“…The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the…”
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Influence of doping profile and halo implantation on the threshold voltage mismatch of a 0.13 μm CMOS technology by CROON, J. A, AUGENDRE, E, DECOUTERE, S, SANSEN, W, MAES, H. E

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Noise and Nonlinearity Modeling of Active Mixers for Fast and Accurate Estimation by Wei Cheng, Annema, A J, Croon, J A, Nauta, B

“…This paper presents a model of active mixers for a fast and accurate estimation of noise and nonlinearity. Based on closed-form expressions, this model…”
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Impact of the backside potential on the current collapse of GaN SBDs and HEMTs by Croon, J. A., Hurkx, G. A. M., Donkers, J. J. T. M., Sonsky, J.

“…This paper shows both experimentally and in simulation that the amount of current collapse for GaN SBDs and HEMTs strongly depends on the node to which the…”
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Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield by Croon, J.A., Leunissen, L.H.A., Jurczak, M., Benndorf, M., Rooyackers, R., Ronse, K., Decoutere, S., Sansen, W., Maes, H.E.

“…This work experimentally investigates the impact of line-edge roughness (LER) on the intrinsic transistor performance of the MOS transistor. Examined gate…”
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RF Circuit Linearity Optimization Using a General Weak Nonlinearity Model by Wei Cheng, Oude Alink, Mark S., Annema, A. J., Croon, J. A., Nauta, B.

“…This paper focuses on optimizing the linearity in known RF circuits, by exploring the circuit design space that is usually available in today's deep submicron…”
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Importance sampling Monte Carlo simulations for accurate estimation of SRAM yield by Doorn, T.S., ter Maten, E.J.W., Croon, J.A., Di Bucchianico, A., Wittich, O.

“…Variability is an important aspect of SRAM cell design. Failure probabilities of P fail les10 -10 have to be estimated through statistical simulations…”
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Line edge roughness: characterization, modeling and impact on device behavior by Croon, J.A., Storms, G., Winkelmeier, S., Pollentier, I., Ercken, M., Decoutere, S., Sansen, W., Maes, H.E.

“…Simple analytical expressions are presented, which calculate the impact of line edge roughness on MOSFET parameter fluctuations. It is experimentally…”
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A yield centric statistical design method for optimization of the SRAM active column by Doorn, T.S., Croon, J.A., ter Maten, E.J.W., Di Bucchianico, A.

“…For robust design of SRAM memories, it is not sufficient to guarantee good statistical margins on the SRAM cell parameters. The sense amplifier needs…”
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A comparison of extraction techniques for threshold voltage mismatch by Croon, J.A., Tuinhout, H.P., Difrenza, R., Knol, J., Moonen, A.J., Decoutere, S., Maes, H.E., Sansen, W.

“…In this paper commonly used extraction methods of MOSFET threshold voltage mismatch are compared. The V/sub T/ mismatch is extracted on the exact same device…”
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(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications by Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Li, X., Wu, W., Gildenblat, G.

“…First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general advantages of this model, it is benchmarked against…”
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Accurate Modeling of RF Circuit Blocks: Weakly-Nonlinear Narrowband LNAs by Croon, J.A., Leenaerts, D.M.W., Klaassen, D.B.M.

“…An extensive behavioral model is presented for weakly-nonlinear narrowband LNAs. Both the electrical transfer and noise properties are well described…”
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A Simple and Accurate Deep Submicron Mismatch Model by Croon, J.A., Rosmeulen, M., Decoutere, S., Sansen, W., Maes, H.E.

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Physical modeling and prediction of the matching properties of MOSFETs by Croon, J.A., Decoutere, S., Sansen, W., Maes, H.E.

“…A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping,…”
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Plasmodium vivax: in vitro growth and reinvasion in red blood cells of Aotus nancymai by Mons, B, Collins, W E, Skinner, J C, van der Star, W, Croon, J J, van der Kaay, H J

“…Plasmodium vivax was maintained in experimentally infected Aotus nancymai. Positive monkeys were used as donors for culture material. After leucocyte removal…”
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Erythrocytic schizogony and invasion of Plasmodium vivax in vitro by Mons, B, Croon, J J, van der Star, W, van der Kaay, H J

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Long-term in vitro cultures of Plasmodium berghei and preliminary observations on gametocytogenesis by Janse, C J, Mons, B, Croon, J J, van der Kaay, H J

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