Search Results - "Cressler, J.D."

On the Potential of SiGe HBTs for Extreme Environment Electronics by Cressler, J.D.

“…"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the…”
Get full text

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications by Cressler, J.D.

“…The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. SiGe HBT…”
Get full text

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end by Mukhopadhyay, R., Yunseo Park, Sen, P., Srirattana, N., Jongsoo Lee, Chang-Ho Lee, Nuttinck, S., Joseph, A., Cressler, J.D., Laskar, J.

“…This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent RF front-end for multiband and multistandard…”
Get full text

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation by Yunseo Park, Chang-Ho Lee, Cressler, J.D., Laskar, J.

“…The design of ultra-wideband (UWB) low-noise amplifiers (LNAs) require additional circuit design principles, which differ from those used in conventional LNAs…”
Get full text

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology by Jongsoo Lee, Cressler, J.D.

“…We present the analysis and design of an inductorless wide-band SiGe heterojunction bipolar transistor low-noise amplifier (LNA) using a resistive feedback…”
Get full text

Half-terahertz operation of SiGe HBTs by Krithivasan, R., Yuan Lu, Cressler, J.D., Jae-Sung Rieh, Khater, M.H., Ahlgren, D., Freeman, G.

“…This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half…”
Get full text

A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules by Comeau, J.P., Morton, M.A., Kuo, W.-M.L., Thrivikraman, T., Andrews, J.M., Grens, C.M., Cressler, J.D., Papapolymerou, J., Mitchell, M.

“…This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit/receive (T/R) radar modules,…”
Get full text

Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters by Morton, M.A., Comeau, J.P., Cressler, J.D., Mitchell, M., Papapolymerou, J.

“…A comprehensive analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and…”
Get full text

Sub-1-K Operation of SiGe Transistors and Circuits by Najafizadeh, L., Adams, J.S., Phillips, S.D., Moen, K.A., Cressler, J.D., Aslam, S., Stevenson, T.R., Meloy, R.M.

“…We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the…”
Get full text

Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers by Andrews, J.M., Grens, C.M., Cressler, J.D.

“…Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit…”
Get full text

On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds by Jiahui Yuan, Cressler, J.D., Krithivasan, R., Thrivikraman, T., Khater, M.H., Ahlgren, D.C., Joseph, A.J., Jae-Sung Rieh

“…The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating…”
Get full text

Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset by Appaswamy, A., Phillips, S., Cressler, J.D.

“…Inverse-mode (collector-up) operation is proposed as a solution to the single-event-upset susceptibility observed in commercially available bulk…”
Get full text

A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications by Yuan Yao, Dai, F., Jaeger, R.C., Cressler, J.D.

“…This paper presents an 80-MHz 12-bit cryogenic low-power digital-to-analog converter (DAC) implemented in a 0.5-mum SiGe BiCMOS technology. The cryogenic DAC…”
Get full text

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs by Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.

“…A new four-port scattering parameter (S-parameter) and broad-band noise deembedding methodology is presented. This deembedding technique considers distributed…”
Get full text

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs by Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

“…We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the inclusion of an alternate…”
Get full text

2005 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Guest Editor by Cressler, J.D.

Get full text

A Ka-Band Electronically Tunable Ferroelectric Filter by Courreges, S., Yuan Li, Zhiyong Zhao, Kwang Choi, Hunt, A., Horst, S., Cressler, J.D., Papapolymerou, J.

“…This letter presents a three-pole tunable Ka-band coplanar filter that includes six high-Q BST ferroelectric capacitors. It tunes from 29 GHz up to 34 GHz…”
Get full text

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors by Gang Zhang, Cressler, J.D., Guofu Niu, Joseph, A.J.

“…A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large I/sub…”
Get full text

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K by Lan Luo, Guofu Niu, Moen, K.A., Cressler, J.D.

“…In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors…”
Get full text

On Common-Base Avalanche Instabilities in SiGe HBTs by Grens, C.M., Cressler, J.D., Joseph, A.J.

“…This paper presents a detailed investigation of the key device-level factors that contribute to the bias-dependent features observed in common-base (CB) dc…”
Get full text