Search Results - "Cox, N. W."

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  1. 1

    X-Band TRAPATT Amplifier (Short Papers) by Cox, N.W., Rucker, C.T., Hill, G.N., Gsteiger, K.E.

    “…The design and performance of broad-band TRAPATT amplifiers in X band are described along with a discussion of critical circuit parameters. Bandwidths of 10…”
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    Journal Article
  2. 2

    Experimental Study of Series Connected TRAPATT Diodes (Short Papers) by Gleason, K.R., Rucker, C.T., Cox, N.W., Macpherson, A.C., Cohen, E.D.

    “…The results of experiments using TRAPATT diodes connected in series at 0.5, 2, and 8 GHz are described. These experiments demonstrate that successful series…”
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    Journal Article
  3. 3

    Symmetry Experiments with Four-Mesa IMPATT Diodes (Letters) by Rucker, C.T., Cox, N.W., Amoss, J.W.

    “…Experiments with four-mesa silicon p+-n-n+ IMPATT diodes have shown power saturation and reduced efficiency when connected and packaged in electrically…”
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    Journal Article
  4. 4

    Growth of InGaAsP by molecular beam epitaxy by Holah, G. D., Eisele, F. L., Meeks, E. L., Cox, N. W.

    Published in Applied physics letters (01-12-1982)
    “…Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption,…”
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    Journal Article
  5. 5
  6. 6

    Molecular beam epitaxial growth of CdTe, HgTe, and Hg1−x Cd x Te alloys by Summers, C. J., Meeks, E. L., Cox, N. W.

    “…Preliminary results are presented of the growth of CdTe, HgTe and Hg1−x Cd x Te layers with x‐values between 0.9 and 0.17 by molecular beam epitaxy (MBE). The…”
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    Journal Article
  7. 7

    Molecular Beam Epitaxial Growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te Alloys by Summers, C J, Meeks, E L, Cox, N W

    “…Preliminary results are presented of the growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te layers with x-values between 0.9 and 0.17 by molecular beam epitaxy…”
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    Journal Article
  8. 8

    Multichip IMPATT Power Combining, a Summary with New Analytical and Experimental Results by Rucker, C.T., Amoss, J.W., Hill, G.N., Cox, N.W.

    “…X band IMPATT diode chips have been efficiently combined in parallel, in series on diamond heat sinks, and in series-parallel on diamond heat sinks. This paper…”
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    Journal Article
  9. 9

    Series Interconnection of Six TRAPATT Devices on a Diamond Substrate by Cox, N.W., Hill, G.N., Amoss, J.W., Rucker, C.T.

    “…The effects of package parasitic on series interconnections of TRAPATT diode chips on diamond substrates have been studied via time domain computer simulations…”
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    Conference Proceeding
  10. 10

    X-Band TRAPATT Amplifier by Cox, N.W., Rucker, C.T., Gsteiger, K.E.

    “…The design and performance of broad-band TRAPATT amplifiers in X-band are described along with a discussion of critical circuit parameters. Bandwidths of 10%…”
    Get full text
    Conference Proceeding