Search Results - "Cox, N. W."
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X-Band TRAPATT Amplifier (Short Papers)
Published in IEEE transactions on microwave theory and techniques (01-12-1974)“…The design and performance of broad-band TRAPATT amplifiers in X band are described along with a discussion of critical circuit parameters. Bandwidths of 10…”
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Journal Article -
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Experimental Study of Series Connected TRAPATT Diodes (Short Papers)
Published in IEEE transactions on microwave theory and techniques (01-08-1974)“…The results of experiments using TRAPATT diodes connected in series at 0.5, 2, and 8 GHz are described. These experiments demonstrate that successful series…”
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Journal Article -
3
Symmetry Experiments with Four-Mesa IMPATT Diodes (Letters)
Published in IEEE transactions on microwave theory and techniques (01-01-1977)“…Experiments with four-mesa silicon p+-n-n+ IMPATT diodes have shown power saturation and reduced efficiency when connected and packaged in electrically…”
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Journal Article -
4
Growth of InGaAsP by molecular beam epitaxy
Published in Applied physics letters (01-12-1982)“…Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption,…”
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Journal Article -
5
A floating three-terminal nullor and the universal impedance converter
Published in IEEE transactions on circuit theory (1971)Get full text
Journal Article -
6
Molecular beam epitaxial growth of CdTe, HgTe, and Hg1−x Cd x Te alloys
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-04-1984)“…Preliminary results are presented of the growth of CdTe, HgTe and Hg1−x Cd x Te layers with x‐values between 0.9 and 0.17 by molecular beam epitaxy (MBE). The…”
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Journal Article -
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Molecular Beam Epitaxial Growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te Alloys
Published in Journal of vacuum science & technology. B, Microelectronics processing and phenomena (01-04-1984)“…Preliminary results are presented of the growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te layers with x-values between 0.9 and 0.17 by molecular beam epitaxy…”
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Journal Article -
8
Multichip IMPATT Power Combining, a Summary with New Analytical and Experimental Results
Published in IEEE transactions on microwave theory and techniques (01-12-1979)“…X band IMPATT diode chips have been efficiently combined in parallel, in series on diamond heat sinks, and in series-parallel on diamond heat sinks. This paper…”
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Journal Article -
9
Series Interconnection of Six TRAPATT Devices on a Diamond Substrate
Published in 1976 IEEE-MTT-S International Microwave Symposium (1976)“…The effects of package parasitic on series interconnections of TRAPATT diode chips on diamond substrates have been studied via time domain computer simulations…”
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Conference Proceeding -
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X-Band TRAPATT Amplifier
Published in S-MTT International Microwave Symposium Digest (1974)“…The design and performance of broad-band TRAPATT amplifiers in X-band are described along with a discussion of critical circuit parameters. Bandwidths of 10%…”
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Conference Proceeding