Search Results - "Cox, N W"
-
1
X-Band TRAPATT Amplifier (Short Papers)
Published in IEEE transactions on microwave theory and techniques (01-12-1974)“…The design and performance of broad-band TRAPATT amplifiers in X band are described along with a discussion of critical circuit parameters. Bandwidths of 10…”
Get full text
Journal Article -
2
Experimental Study of Series Connected TRAPATT Diodes (Short Papers)
Published in IEEE transactions on microwave theory and techniques (01-08-1974)“…The results of experiments using TRAPATT diodes connected in series at 0.5, 2, and 8 GHz are described. These experiments demonstrate that successful series…”
Get full text
Journal Article -
3
Symmetry Experiments with Four-Mesa IMPATT Diodes (Letters)
Published in IEEE transactions on microwave theory and techniques (01-01-1977)“…Experiments with four-mesa silicon p+-n-n+ IMPATT diodes have shown power saturation and reduced efficiency when connected and packaged in electrically…”
Get full text
Journal Article -
4
Growth of InGaAsP by molecular beam epitaxy
Published in Applied physics letters (01-12-1982)“…Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption,…”
Get full text
Journal Article -
5
A floating three-terminal nullor and the universal impedance converter
Published in IEEE transactions on circuit theory (1971)Get full text
Journal Article -
6
Molecular Beam Epitaxial Growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te Alloys
Published in Journal of vacuum science & technology. B, Microelectronics processing and phenomena (01-04-1984)“…Preliminary results are presented of the growth of CdTe, HgTe and Hg sub 1--x Cd sub x Te layers with x-values between 0.9 and 0.17 by molecular beam epitaxy…”
Get full text
Journal Article -
7
Molecular beam epitaxial growth of CdTe, HgTe, and Hg1−x Cd x Te alloys
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-04-1984)“…Preliminary results are presented of the growth of CdTe, HgTe and Hg1−x Cd x Te layers with x‐values between 0.9 and 0.17 by molecular beam epitaxy (MBE). The…”
Get full text
Journal Article -
8
Multichip IMPATT Power Combining, a Summary with New Analytical and Experimental Results
Published in IEEE transactions on microwave theory and techniques (01-12-1979)“…X band IMPATT diode chips have been efficiently combined in parallel, in series on diamond heat sinks, and in series-parallel on diamond heat sinks. This paper…”
Get full text
Journal Article -
9
Series Interconnection of Six TRAPATT Devices on a Diamond Substrate
Published in 1976 IEEE-MTT-S International Microwave Symposium (1976)“…The effects of package parasitic on series interconnections of TRAPATT diode chips on diamond substrates have been studied via time domain computer simulations…”
Get full text
Conference Proceeding -
10
X-Band TRAPATT Amplifier
Published in S-MTT International Microwave Symposium Digest (1974)“…The design and performance of broad-band TRAPATT amplifiers in X-band are described along with a discussion of critical circuit parameters. Bandwidths of 10%…”
Get full text
Conference Proceeding